Semiconductor device in a level shifter with electrostatic discharge (ESD) protection circuit and semiconductor chip
The present disclosure relates to a semiconductor chip having a level shifter with electro-static discharge (ESD) protection circuit and device applied to multiple power supply lines with high and low power input to protect the level shifter from the static ESD stress. More particularly, the present disclosure relates to a feature to protect a semiconductor device in a level shifter from the ESD stress by using ESD stress blocking region adjacent to a gate electrode of the semiconductor device. The ESD stress blocking region increases a gate resistance of the semiconductor device, which results in reducing the ESD stress applied to the semiconductor device.
1. A semiconductor device, comprising:
a source region and a drain region formed in a substrate;
a gate dielectric layer comprising a thin gate dielectric layer and a thick gate dielectric layer formed on the substrate;
a gate electrode formed on the gate dielectric layer and electrically connected to a gate protection region;
a silicide layer formed on the source region, the drain region, and gate contact regions connected to the gate protection region; and
a silicide blocking layer configured to prevent silicide formation and formed on the gate protection region,
wherein the gate electrode and the gate protection region each comprise a polysilicon layer, and
wherein the gate protection region has a higher resistance per unit area than that of the gate electrode.
2. The semiconductor device of claim 1 , wherein the gate protection region is disposed between the gate electrode and the gate contact regions.
3. The semiconductor device of claim 1 , wherein the gate protection region is disposed adjacent to the gate electrode and is electrically connected to the gate electrode.
4. The semiconductor device of claim 1 , wherein the gate protection region comprises a first region abutting the gate electrode and a second region disposed between the first region and the gate contact regions.
5. The semiconductor device of claim 4 , wherein the second region is electrically connected to the gate contact regions, and has a width smaller than that of the first region.
6. The semiconductor device of claim 4 , wherein the silicide blocking layer is an oxide layer or a nitride layer.
7. The semiconductor device of claim 1 , wherein the silicide layer comprises one of CoSi 2 , NiSi and TiSi 2 .
8. The semiconductor device of claim 1 , wherein the silicide blocking layer is further formed on the gate electrode.
9. The semiconductor device of claim 1 , wherein the gate protection region is formed spaced apart from the gate electrode, and is connected to the gate electrode using a metal interconnection layer.
10. The semiconductor device of claim 1 , wherein the thick gate dielectric layer is thicker than the thin gate dielectric layer and is disposed adjacent to the drain region, and
wherein the thin gate dielectric layer is disposed adjacent to the source region.
11. A semiconductor device, comprising:
a substrate having an active region and an isolation region;
a gate dielectric layer comprising a thin gate dielectric layer and a thick gate dielectric layer formed on the substrate;
a source region disposed adjacent to the thin gate dielectric layer, and a drain region disposed adjacent to the thick gate dielectric layer;
a well region of a first conductivity type and an extended drain junction region of a second conductivity type formed in the well region;
a gate electrode formed on the gate dielectric layer and electrically connected to a gate protection region; and
a silicide layer formed on the source region, the drain region, and gate contact regions connected to the gate protection region,
wherein the gate electrode and the gate protection region each comprise a polysilicon layer,
wherein the gate protection region has a higher resistance per unit area than that of the gate electrode, and
wherein the extended drain junction region overlaps the thick gate dielectric layer.
12. The semiconductor device of claim 11 , further comprising a silicide blocking layer configured to prevent silicide formation and formed on the gate protection region.
13. The semiconductor device of claim 12 , wherein the silicide blocking layer is further formed on the gate electrode.
14. The semiconductor device of claim 11 , wherein the extended drain junction region of the second conductivity type has a depth smaller than that of the isolation region.
15. The semiconductor device of claim 11 , wherein the source region is formed in the well region of the first conductivity type, and the drain region is formed in the extended drain junction region of the second conductivity type.
16. The semiconductor device of claim 11 , wherein the gate protection region is disposed between the gate electrode and the gate contact regions.
17. The semiconductor device of claim 11 , wherein the gate protection region is disposed adjacent to the gate electrode and is electrically connected to the gate electrode.
18. The semiconductor device of claim 11 , wherein the gate protection region comprises a first region abutting the gate electrode and a second region disposed between the first region and the gate contact regions.
19. The semiconductor device of claim 18 , wherein the second region is electrically connected to the gate contact regions, and has a width smaller than that of the first region.
20. The semiconductor device of claim 11 , wherein the gate protection region is formed spaced apart from the gate electrode, and is connected to the gate electrode using a metal interconnection layer.