Three-dimensional memory devices with drain select gate cut and methods for forming and operating the same
Embodiments of 3D memory devices and methods for forming and operating the same are disclosed. In an example, a 3D memory device includes a memory stack, a plurality of memory strings, and a plurality of bit line contacts each in contact with a respective one of the plurality of memory strings. The memory stack includes interleaved conductive layers and dielectric layers. Each memory string extends vertically through the memory stack. The conductive layers include a plurality of drain select gate (DSG) lines configured to control drains of the plurality of memory strings. The plurality of memory strings are divided into a plurality of regions that are a minimum repeating unit of the memory stack in a plan view. Each of the plurality of memory strings abuts at least one of the DSG lines.
1. A three-dimensional (3D) memory device, comprising:
a memory stack comprising vertically interleaved conductive layers and dielectric layers;
a plurality of memory strings each extending vertically through the memory stack; and
a plurality of bit line contacts each in contact with a respective one of the plurality of memory strings,
wherein the conductive layers comprise a plurality of drain select gate (DSG) lines configured to control drains of the plurality of memory strings;
the plurality of memory strings are divided into a plurality of regions that are a minimum repeating unit of the memory stack in a plan view; and
each of the plurality of memory strings abuts at least one of the DSG lines.
2. The 3D memory device of claim 1 , wherein
the plurality of regions comprise a DSG cut region and a non-DSG cut region; and
the number of the DSG lines in the non-DSG cut region is greater than the number of the DSG lines in the DSG cut region.
3. The 3D memory device of claim 2 , wherein the number of the memory strings in the non-DSG cut region is the same as the number of the memory strings in the DSG cut region.
4. The 3D memory device of claim 2 , wherein the DSG cut region is free of dummy memory string.
5. The 3D memory device of claim 2 , wherein a height of each of the memory strings in the non-DSG cut region is greater than a height of each of the memory strings in the DSG cut region.
6. The 3D memory device of claim 2 , wherein a height of each of the bit line contacts in the DSG cut region is greater than a height of each of the bit line contacts in the non-DSG cut region.
7. The 3D memory device of claim 2 , wherein the plurality of regions comprise the DSG cut region between two non-DSG cut regions in the plan view.
8. The 3D memory device of claim 2 , wherein each of the memory strings comprise a channel plug at one end thereof in contact with the respective bit line contact.
9. The 3D memory device of claim 8 , wherein the channel plugs in the DSG-cut region is vertically between at least two of the DSG lines.
10. The 3D memory device of claim 2 , further comprising a gate line slit (GLS) extending laterally in a word line direction, and the DSG-cute region extends laterally in the word line direction parallel to the GLS.
11. The 3D memory device of claim 1 , wherein the DSG lines comprise the outermost ones of the conductive layers.
12. The 3D memory device of claim 11 , wherein the memory strings in the DSG cut region do not extend beyond the outmost conductive layer.
13. The 3D memory device of claim 1 , wherein the DSG lines have different lateral dimensions.