Boron nitride nanostructures
The present invention relates to a method for producing boron nitride nanostructures, the method comprising subjecting boron nitride precursor material to lamp ablation within an adiabatic radiative shielding environment. The nanostructures produced may include nano-onion structures. The boron nitride precursor material subjected to lamp ablation may include amorphous boron nitride, hexagonal boron nitride, cubic boron nitride, wurtzite boron nitride or a combination of two or more thereof.
1. A method for producing boron nitride nanostructures, the method comprising subjecting boron nitride precursor material to multiple lamp ablation exposures within an adiabatic radiative shielding environment.
2. The method according to claim 1 , wherein the nanostructures produced comprise nano-onion structures.
3. The method according to claim 1 , wherein the nanostructures produced comprise at least 50 wt % nano-onion structures.
4. The method according claim 1 , wherein the boron nitride precursor material subjected to lamp ablation comprises amorphous boron nitride, hexagonal boron nitride, cubic boron nitride, wurtzite boron nitride or a combination of two or more thereof.
5. The method according to claim 1 , wherein the boron nitride precursor material subjected to lamp ablation comprises hexagonal boron nitride.
6. The method according to claim 1 , wherein the boron nitride precursor material subjected to lamp ablation comprises boron nitride nano-horns, boron nitride nano-rods, boron nitride nano-tubes, boron nitride nano-sheets, boron nitride nano-platelets, boron nitride nano-onions or a combination of two or more thereof.
7. The method according to claim 1 , wherein the boron nitride precursor material subjected to lamp ablation is rotated within lamp emission that provides for the lamp ablation.
8. The method according to claim 1 , wherein the lamp ablation is performed using a xenon gas-discharge lamp.
9. The method according to claim 1 , wherein the lamp ablation is performed using an ellipsoidal mirror to focus lamp emission onto the boron nitride precursor material.
10. The method according to claim 1 , wherein the boron nitride precursor material is subjected to lamp ablation for at least 5 minutes.
11. The method according to claim 1 , wherein the boron nitride precursor material is subjected to lamp ablation at a pressure less than atmospheric pressure.
12. The method according to claim 1 , wherein the boron nitride precursor material is subjected to lamp ablation at a temperature in the range between about 1,400° C. and about 3,500° C.
13. The method according to claim 1 , wherein the nanostructures produced comprise nano-platelet structures.
14. The method according to claim 1 , wherein the nanostructures produced comprise nano-rod structures.
15. The method according to claim 1 , wherein the nanostructures produced comprise nano-horn structures.
16. The method according to claim 1 , wherein the nanostructures produced are crystalline.
17. The method according to claim 1 , wherein the adiabatic radiative shielding environment is in the form of a vessel comprising fused quartz.
18. The method according to claim 17 , wherein the vessel containing the boron nitride precursor material is at or proximate to a focal point of a lamp that provides for the lamp ablation.
19. The method according to claim 18 , wherein the boron nitride nanostructures so produced are formed within the vessel about 6 cm to about 30 cm away from the focal point of the lamp.
20. The method according to claim 17 , wherein the vessel is hermetically sealed and has two or more layers of material which are each spaced apart and each hermetically sealed.