Arc path formation unit and direct current relay including same
An arc path formation unit and a direct current relay are disclosed. The arc path formation unit, according to various embodiments of the present disclosure, includes a Halbach array provided in at least one of the forward and backward directions. The Halbach array forms a magnetic field within an arc chamber by itself or along with another magnetic body. An electromagnetic force may be generated for inducing an arc that is generated by a formed magnetic field and current flowing through the direct current relay. The electromagnetic force is generated in a direction away from each fixed contact. Accordingly, the generated arc can be extinguished and discharged effectively.
1. An arc path formation unit comprising:
a magnet frame having a space part, in which a fixed contactor and a movable contactor are accommodated, formed therein; and
a Halbach array located in the space part of the magnet frame and configured to form a magnetic field in the space part,
wherein a length of the space part in one direction is formed to be greater than a length thereof in the other direction,
the magnet frame includes:
a first surface and a second surface which extend in the one direction, are disposed to face each other, and are configured to surround a portion of the space part; and
a third surface and a fourth surface which extend in the other direction, are continuous with the first surface and the second surface, respectively, are disposed to face each other, and are configured to surround a remaining portion of the space part, and
the Halbach array includes a plurality of blocks disposed side by side in the one direction and in physical contact with at least one other block of the plurality of blocks and formed of a magnetic material, and is located adjacent to one or more surfaces of the first surface and the second surface.
2. The arc path formation unit of claim 1 , wherein
the Halbach array includes:
a first Halbach array located adjacent to any one surface of the first surface and the second surface; and
a second Halbach array located adjacent to the other surface of the first surface and the second surface and disposed to face the first Halbach array with the space part therebetween.
3. The arc path formation unit of claim 2 , wherein a surface of the first Halbach array facing the second Halbach array and a surface of the second Halbach array facing the first Halbach array are magnetized to different polarities.
4. The arc path formation unit of claim 2 , wherein
the first Halbach array includes:
a first block located to be biased to any one surface of the third surface and the fourth surface;
a third block located to be biased to the other surface of the third surface and the fourth surface; and
a second block located between the first block and the third block, and
the second Halbach array includes:
a first block located to be biased to any one surface of the third surface and the fourth surface;
a third block located to be biased to the other surface of the third surface and the fourth surface; and
a second block located between the first block and the third block.
5. The arc path formation unit of claim 4 , wherein
in the first Halbach array,
a surface of the first block facing the second block, a surface of the third block facing the second block, and a surface of the second block facing the second Halbach array are magnetized to the same polarity, and
in the second Halbach array,
a surface of the first block facing the second block, a surface of the third block facing the second block, and a surface of the second block facing the first Halbach array are magnetized to a polarity different from the polarity.
6. The arc path formation unit of claim 1 , wherein
the Halbach array includes:
a first Halbach array located adjacent to any one surface of the first surface and the second surface, and located to be biased to any one surface of the third surface and the fourth surface; and
a second Halbach array located adjacent to the any one surface of the first surface and the second surface, and located to be biased to the other surface of the third surface and the fourth surface, and
a magnet part, which is provided separately from the Halbach array, disposed to face each of the first and second Halbach arrays with the space part therebetween, and configured to form the magnetic field in the space part, is provided on the other surface of the first surface and the second surface.
7. The arc path formation unit of claim 6 , wherein
a surface of the first Halbach array facing the magnet part and a surface of the second Halbach array facing the magnet part are magnetized to the same polarity, and
a surface of the magnet part facing the first Halbach array and the second Halbach array is magnetized to a polarity different from the polarity.
8. The arc path formation unit of claim 6 , wherein
the first Halbach array includes:
a first block located to be biased to the any one surface of the third surface and the fourth surface;
a third block located to be biased to the other surface of the third surface and the fourth surface; and
a second block located between the first block and the third block, and
the second Halbach array includes:
a first block located to be biased to the any one surface of the third surface and the fourth surface;
a third block located to be biased to the other surface of the third surface and the fourth surface; and
a second block located between the first block and the third block.
9. The arc path formation unit of claim 8 , wherein
in the first Halbach array,
a surface of the first block facing the second block, a surface of the third block facing the second block, and a surface of the second block facing the magnet part are magnetized to the same polarity,
in the second Halbach array,
a surface of the first block facing the second block, a surface of the third block facing the second block, and a surface of the second block facing the magnet part are magnetized to the same polarity, and
in the magnet part,
a surface of the magnet part facing the first Halbach array and the second Halbach array is magnetized to a polarity different from the polarity.
10. The arc path formation unit of claim 1 , wherein
the Halbach array includes:
a first Halbach array located adjacent to any one surface of the first surface and the second surface, and located to be biased to any one surface of the third surface and the fourth surface;
a second Halbach array located adjacent to the any one surface of the first surface and the second surface, and located to be biased to the other surface of the third surface and the fourth surface;
a third Halbach array located adjacent to the other surface of the first surface and the second surface, located to be biased to the any one surface of the third surface and the fourth surface, and disposed to face the first Halbach array with the space part therebetween; and
a fourth Halbach array located adjacent to the other surface of the first surface and the second surface, located to be biased to the other surface of the third surface and the fourth surface, and disposed to face the second Halbach array with the space part therebetween.
11. The arc path formation unit of claim 10 , wherein
a surface of the first Halbach array facing the third Halbach array and a surface of the second Halbach array facing the fourth Halbach array are magnetized to the same polarity, and
a surface of the third Halbach array facing the first Halbach array and a surface of the fourth Halbach array facing the second Halbach array are magnetized to a polarity different from the polarity.
12. The arc path formation unit of claim 10 , wherein
the first Halbach array includes:
a first block located to be biased to the any one surface of the third surface and the fourth surface;
a third block located to be biased to the other surface of the third surface and the fourth surface; and
a second block located between the first block and the third block,
the second Halbach array includes:
a first block located to be biased to the any one surface of the third surface and the fourth surface;
a third block located to be biased to the other surface of the third surface and the fourth surface; and
a second block located between the first block and the third block,
the third Halbach array includes:
a first block located to be biased to the any one surface of the third surface and the fourth surface;
a third block located to be biased to the other surface of the third surface and the fourth surface; and
a second block located between the first block and the third block, and
the fourth Halbach array includes:
a first block located to be biased to the any one surface of the third surface and the fourth surface;
a third block located to be biased to the other surface of the third surface and the fourth surface; and
a second block located between the first block and the third block.
13. The arc path formation unit of claim 12 , wherein
in each of the first Halbach array and the second Halbach array,
a surface of the first block facing the second block, a surface of the third block facing the second block, and a surface of the second block facing the third Halbach array and the fourth Halbach array are magnetized to the same polarity, and
in each of the third Halbach array and the fourth Halbach array,
a surface of the first block facing the second block, a surface of the third block facing the second block, and a surface of the second block facing the first Halbach array and the second Halbach array are magnetized to a polarity different from the polarity.
14. A direct current relay comprising:
a plurality of fixed contactors located to be spaced apart from each other in one direction;
a movable contactor configured to be brought into contact with or separated from the fixed contactors;
a magnet frame having a space part, in which the fixed contactors and the movable contactor are accommodated, formed therein; and
a Halbach array located in the space part of the magnet frame and configured to form a magnetic field in the space part,
wherein a length of the space part in the one direction is formed to be greater than a length thereof in the other direction,
the magnet frame includes:
a first surface and a second surface which extend in the one direction, are disposed to face each other, and are configured to surround a portion of the space part; and
a third surface and a fourth surface which extend in the other direction, are continuous with the first surface and the second surface, respectively, are disposed to face each other, and are configured to surround a remaining portion of the space part, and
the Halbach array includes a plurality of blocks disposed side by side in the one direction and in physical contact with at least one other block of the plurality of blocks and formed of a magnetic material, and is located adjacent to one or more surfaces of the first surface and the second surface.
15. The direct current relay of claim 14 , wherein
the Halbach array includes:
a first Halbach array located adjacent to any one surface of the first surface and the second surface; and
a second Halbach array located adjacent to the other surface of the first surface and the second surface and disposed to face the first Halbach array with the space part therebetween,
wherein a surface of the first Halbach array facing the second Halbach array and a surface of the second Halbach array facing the first Halbach array are magnetized to different polarities.
16. The direct current relay of claim 14 , wherein
the Halbach array includes:
a first Halbach array located adjacent to any one surface of the first surface and the second surface, and located to be biased to any one surface of the third surface and the fourth surface; and
a second Halbach array located adjacent to the any one surface of the first surface and the second surface, and located to be biased to the other surface of the third surface and the fourth surface, and
a magnet part, which is provided separately from the Halbach array, disposed to face each of the first and second Halbach arrays with the space part therebetween, and configured to form the magnetic field in the space part, is provided on the other surface of the first surface and the second surface,
wherein a surface of the first Halbach array facing the magnet part and a surface of the second Halbach array facing the magnet part are magnetized to the same polarity, and
a surface of the magnet part facing the first Halbach array and the second Halbach array is magnetized to a polarity different from the polarity.
17. The direct current relay of claim 14 , wherein
the Halbach array includes:
a first Halbach array located adjacent to any one surface of the first surface and the second surface, and located to be biased to any one surface of the third surface and the fourth surface;
a second Halbach array located adjacent to the any one surface of the first surface and the second surface, and located to be biased to the other surface of the third surface and the fourth surface;
a third Halbach array located adjacent to the other surface of the first surface and the second surface, located to be biased to the any one surface of the third surface and the fourth surface, and disposed to face the first Halbach array with the space part therebetween; and
a fourth Halbach array located adjacent to the other surface of the first surface and the second surface, located to be biased to the other surface of the third surface and the fourth surface, and disposed to face the second Halbach array with the space part therebetween,
wherein a surface of the first Halbach array facing the third Halbach array and a surface of the second Halbach array facing the fourth Halbach array are magnetized to the same polarity, and
a surface of the third Halbach array facing the first Halbach array and a surface of the fourth Halbach array facing the second Halbach array are magnetized to a polarity different from the polarity.