Systems and methods for substrate support temperature control
Exemplary methods of semiconductor processing may include coupling a fluid conduit within a substrate support in a semiconductor processing chamber to a system foreline. The coupling may vacuum chuck a substrate with the substrate support. The methods may include flowing a gas into the fluid conduit. The methods may include maintaining a pressure between the substrate and the substrate support at a pressure higher than the pressure at the system foreline.
1. A method of semiconductor processing comprising: coupling a fluid conduit within a substrate support in a semiconductor processing chamber to a system foreline, wherein the substrate support defines a plurality of protrusions extending from a first surface of the substrate support, wherein the protrusions extend from the first surface of the substrate support to a similar height, and wherein the first surface of the substrate support is characterized by a raised portion creating a reduced gap height between two or more adjacent protrusions within the raised portion of the first surface of the substrate support,
wherein the coupling vacuum chucks a substrate with the substrate support, wherein the substrate is seated on the plurality of protrusions and the substrate support comprises a sealing band extending at a periphery of the substrate;
flowing a gas into the fluid conduit, thereby maintaining a pressure between the substrate and the substrate support at a pressure higher than a vacuum pressure drawn on the fluid conduit; and
releasing the coupling to de-chuck the substrate.
2. The method of semiconductor processing of claim 1 , wherein coupling the fluid conduit to the system fore line comprises actuating a valve between the fluid conduit and the system foreline to form a vacuum in the fluid conduit.
3. The method of semiconductor processing of claim 1 , further comprising: forming a vacuum within the semiconductor processing chamber to provide a processing pressure, wherein the pressure between the substrate and the substrate support is between the pressure at the system fore line and the processing pressure.
4. The method of semiconductor processing of claim 3 , wherein the pressure between the substrate and the substrate support is maintained between about 1 Torr and about 30 Torr.
5. The method of semiconductor processing of claim 1 , wherein a manometer is coupled in the fluid conduit proximate the semiconductor processing chamber.
6. The method of semiconductor processing of claim 5 , wherein the manometer is communicatively coupled with a controller configured to control a flow rate of the gas being flowed into the fluid conduit.
7. The method of semiconductor processing of claim 6 , further comprising adjusting the flow rate of the gas being flowed into the fluid conduit to maintain a pressure setpoint at the manometer.
8. The method of semiconductor processing of claim 6 , wherein the controller comprises a mass flow controller coupled with an inert gas source.
9. The method of semiconductor processing of claim 1 , wherein the raised portion is located at a central region of the substrate support.
10. The method of semiconductor processing of claim 1 , wherein the raised portion comprises an annular region located radially outward of a center of the substrate support.
11. A semiconductor processing system comprising:
a semiconductor processing chamber;
a foreline fluidly coupling the semiconductor processing chamber with a pump; a substrate support disposed within the semiconductor processing chamber, the substrate support comprising a first surface configured to contact a substrate, wherein the first surface defines an aperture through the substrate support, and wherein the substrate support defines a plurality of protrusions extending from the first surface of the substrate support, wherein the protrusions extend from the first surface of the substrate support to a similar height, and wherein the first surface of the substrate support is characterized by a raised portion creating a reduced gap height between protrusions within the raised portion of the first surface of the substrate support; a shaft extending from the substrate support and providing fluid access to the aperture defined through the substrate support;
a fluid line extending from the shaft to a pressure controller, wherein the fluid line is fluidly accessible between the semiconductor processing chamber and the foreline; and
a gas injection line fluidly coupling a gas source with the fluid line, wherein the pressure controller is configured to deliver gas from the gas source through the gas injection line into the fluid line.
12. The semiconductor processing chamber of claim 11 , wherein a manometer is coupled in the fluid line proximate the semiconductor processing chamber.
13. The semiconductor processing chamber of claim 11 , wherein the raised portion is located at a central region of the substrate support.
14. The semiconductor processing chamber of claim 13 , wherein the raised portion is a first raised portion, and wherein the first surface of the substrate support is characterized by a second raised portion comprising an annular region located radially outward of the central region of the substrate support.