Power amplifier
A power amplifier comprising a first member and a second member including a compound semiconductor region joined to a first face of the first member including a semiconductor region. The second member includes an amplifier circuit including a compound semiconductor element, and multiple clamp diodes connected in multiple stages and between an output port of the amplifier circuit and ground. The first member includes a switch, connected between an extension point, which is a middle point of the multiple clamp diodes and the ground, a temperature sensor, and a switch control circuit which performs on-off control of the switch based on a result of measurement by the temperature sensor. The extension point is connected to the switch via a path including an inter-member connection wire on an interlayer insulating film from the first face of the first member to a surface of the second member.
1. A power amplifier comprising:
a first member including a semiconductor region; and
a second member that is joined to a first face, which is one face of the first member, and that includes a compound semiconductor region,
wherein the second member includes
an amplifier circuit that includes a compound semiconductor element, and
a plurality of clamp diodes connected in multiple stages and disposed between an output port of the amplifier circuit and ground,
wherein the first member includes
a switch connected between an extension point, which is a middle point of the plurality of clamp diodes that is connected in multiple stages, and the ground,
a temperature sensor, and
a switch control circuit configured to perform on-off control of the switch based on a result of measurement by the temperature sensor, and
wherein the extension point is connected to the switch via a path including an inter-member connection wire that is disposed on an interlayer insulating film from the first face of the first member to a surface of the second member and that is configured of a metal pattern or a path intersecting with an interface with which the first member is joined to the second member.
2. The power amplifier according to claim 1 , wherein
the temperature sensor is disposed at a position overlapped with the second member in a plan view.
3. The power amplifier according to claim 1 , further comprising:
a conductive protrusion protruded from the first face of the first member and the surface of the second member.
4. The power amplifier according to claim 1 , wherein
the second member has surface contact with the first face of the first member.
5. The power amplifier according to claim 2 , further comprising:
a conductive protrusion protruded from the first face of the first member and the surface of the second member.
6. The power amplifier according to claim 2 , wherein
the second member has surface contact with the first face of the first member.
7. The power amplifier according to claim 3 , wherein
the second member has surface contact with the first face of the first member.
8. The power amplifier according to claim 5 , wherein
the second member has surface contact with the first face of the first member.
9. A power amplifier comprising:
a first member including a semiconductor region; and
a second member that is joined to a first face, which is one face of the first member, and that includes a compound semiconductor region,
wherein the second member includes
an amplifier circuit that includes a compound semiconductor element,
a plurality of clamp diodes disposed between an output port of the amplifier circuit and ground and connected in series to each other, and
a switch connected between an extension point, which is a middle point of the plurality of clamp diodes that are connected in multiple stages, and the ground, and
wherein the first member includes
a temperature sensor, and
a switch control circuit configured to perform on-off control of the switch based on a result of measurement by the temperature sensor.
10. The power amplifier according to claim 9 , wherein
the temperature sensor is disposed at a position overlapped with the second member in a plan view.
11. The power amplifier according to claim 9 , further comprising:
a conductive protrusion protruded from the first face of the first member and a surface of the second member.
12. The power amplifier according to claim 10 , further comprising:
a conductive protrusion protruded from the first face of the first member and a surface of the second member.
13. The power amplifier according to claim 9 , wherein
the second member has surface contact with the first face of the first member.
14. The power amplifier according to claim 10 , wherein
the second member has surface contact with the first face of the first member.
15. The power amplifier according to claim 11 , wherein
the second member has surface contact with the first face of the first member.
16. The power amplifier according to claim 12 , wherein
the second member has surface contact with the first face of the first member.