Thin film molecular memory
A thin film molecular memory is provided that satisfies criteria needed to make a molecular spintronic device, based on spin crossover complexes, competitive with silicon technology. These criteria include, device implementation, a low coercive voltage (less than 1V) and low write peak currents (on the order of 10 4 A/cm 2 ), a device on/off ratio >10, thin film quality, the ability to “lock” the spin state (providing nonvolatility), the ability to isothermally “unlock” and switch the spin state with voltage, conductance change with spin state, room temperature and above room temperature operation, an on-state device resistivity less than 1 Ω·cm, a device fast switching speed (less than 100 ps), device endurance (on the order of 10 16 switches without degradation), and the ability of having a device with a transistor channel width of 10 nm or below.
1. A system, comprising:
a circuit substrate; and
a thin film molecular memory deposited on the circuit substrate in a back end of line process, wherein the thin film molecular memory comprises a memory device formed of a ferroelectric layer directly adjacent to a spin crossover molecular layer having a channel thickness of 10 nm to 50 nm.
2. The system of claim 1 , wherein the memory device is a two-terminal diode memory device.
3. The system of claim 1 , wherein the memory device is a four-terminal transistor memory device.
4. The system of claim 1 , wherein the ferroelectric layer is fabricated by\evaporation.
5. The system of claim 1 , wherein the ferroelectric layer is fabricated by Langmuir-Blodgett thin film growth.
6. The system of claim 1 , wherein the ferroelectric layer comprises dipolar molecular additives.
7. The system of claim 1 , wherein the ferroelectric layer comprises an organic ferroelectric material.
8. The system of claim 1 , wherein the ferroelectric layer comprises benzimidazole, 2-methylbenzimidazole, 5,6-dichloro-2-methylbenzimidazole, bridged bis(benzimidazole), croconic acid, or a copolymer of polyvinylidene fluoride.
9. The system of claim 1 , wherein the circuit substrate comprises transistor devices.
10. The system of claim 9 , wherein the memory device of the thin film molecular memory is provided in plurality, wherein the plurality of memory devices is electrically connected to the transistor devices of the circuit substrate.
11. The system of claim 10 , wherein the plurality of memory devices is electrically connected to the transistor devices of the circuit substrate through vias and metal lines in the circuit substrate.
12. The system of claim 9 , wherein the transistor devices comprise complementary metal oxide semiconductor (CMOS) transistors.
13. A memory device comprising:
a ferroelectric layer less than 5 nm thick directly adjacent to a spin crossover molecular layer having a channel thickness of at least 10 nm.
14. The memory device of claim 13 , wherein the memory device is a two-terminal diode memory device.
15. The memory device of claim 13 , wherein the memory device is a four-terminal transistor memory device.
16. The memory device of claim 13 , wherein the ferroelectric layer is fabricated by evaporation.
17. The memory device of claim 13 , wherein the ferroelectric layer is fabricated by Langmuir-Blodgett thin film growth.
18. The memory device of claim 13 , wherein the ferroelectric layer comprises dipolar molecular additives.
19. The memory device of claim 13 , wherein the ferroelectric layer comprises an organic ferroelectric material.
20. The memory device of claim 13 , wherein the ferroelectric layer comprises benzimidazole, 2-methylbenzimidazole, 5,6-dichloro-2-methylbenzimidazole, bridged bis(benzimidazole), croconic acid, or a copolymer of polyvinylidene fluoride.