Write path selection

1. A method, comprising:

receiving incoming data, into a storage system;

selecting, by the storage system, on a dynamic basis upon arrival of the incoming data, one of a plurality of write paths for the incoming data, comprising:

a first write path comprising traversal of the incoming data from NVRAM (nonvolatile random-access memory) to SLC (single level cell) flash memory to QLC (quad level cell) flash memory;

a second write path comprising traversal of the incoming data from the NVRAM to the QLC flash memory, bypassing the SLC flash memory; and

a third write path comprising traversal of the incoming data to the SLC flash memory, bypassing the NVRAM, to the QLC flash memory; and

writing the incoming data into the storage system via the selected write path.

2. The method of claim 1 , further comprising:

allocating, by the storage system, a portion of flash memory to operate in SLC mode as a roaming region for the SLC flash memory.

3. The method of claim 1 , further comprising:

allocating a roaming region of a storage system flash memory as the SLC flash memory on a basis of at least one from a group consisting of: period of time-driven, wear-driven, even usage of available SLC flash memory, and system-guaranteed minimum performance level for SLC flash memory.

4. The method of claim 3 , wherein the allocating comprises cycling through flash memory of each of a plurality of solid-state storage drives (SSDs) of the storage system.

5. The method of claim 1 , wherein the SLC flash memory is a buffer in a time range of less than a threshold value for writing the incoming data to the QLC flash memory in the first write path and the third write path.

6. The method of claim 1 , wherein the selecting on the dynamic basis upon the arrival of the incoming data is based on storage system activity relative to the SLC flash memory.

7. The method of claim 1 , wherein the selecting is influenced according to at least one criterion from a group consisting of:

select the first write path when the SLC flash memory is busy;

select the second write path, including bypassing the SLC flash memory, when the SLC flash memory has greater than a threshold amount of wear;

select a write path based on capacity of at least one of the NVRAM, the SLC flash memory, and the QLC flash memory; and

select a write path based on fullness of at least one of the NVRAM, the SLC flash memory, and the QLC flash memory.

8. The method of claim 1 , further comprising:

allocating portions of the SLC flash memory with dynamic sizing, for the first write path and the third write path.

9. The method of claim 1 , further comprising:

writing out from the SLC flash memory to the QLC flash memory, for the first write path and the third write path, in response to space utilization of the SLC flash memory attaining a threshold.

10. A tangible, non-transitory, computer-readable media having instructions thereupon which, when executed by a processor, cause the processor to perform a method comprising:

receiving incoming data, into a storage system;

selecting, by the storage system, on a dynamic basis upon arrival of the incoming data, one of a plurality of write paths for the incoming data, comprising:

a first write path comprising traversal of the incoming data from NVRAM (nonvolatile random-access memory) to SLC (single level cell) flash memory to QLC (quad level cell) flash memory;

a second write path comprising traversal of the incoming data from the NVRAM to the QLC flash memory, bypassing the SLC flash memory; and

a third write path comprising traversal of the incoming data to the SLC flash memory, bypassing the NVRAM, to the QLC flash memory; and

writing the incoming data into the storage system via the selected write path.

11. The computer-readable media of claim 10 , wherein the method further comprises:

allocating, by the storage system, a portion of flash memory to operate in SLC mode as a roaming region for the SLC flash memory.

12. The computer-readable media of claim 10 , wherein the SLC flash memory is to act as a buffer in a time range of less than a threshold value for writing the first data to the QLC flash memory in the first write path and the third write path.

13. The computer-readable media of claim 10 , wherein the selecting is influenced according to at least one criterion from a group consisting of:

select the first write path when the SLC flash memory is busy;

select the second write path, including bypassing the SLC flash memory, when the SLC flash memory has greater than a threshold amount of wear;

select a write path based on capacity of at least one of the NVRAM, the SLC flash memory, and the QLC flash memory; and

select a write path based on fullness of at least one of the NVRAM, the SLC flash memory, and the QLC flash memory.

14. The computer-readable media of claim 10 , wherein the method further comprises:

allocating portions of the SLC flash memory with dynamic sizing, for the first write path and the third write path.

15. A storage system, comprising:

storage memory, comprising SLC (single level cell) flash memory and QLC (quad level cell) flash memory;

NVRAM (nonvolatile random-access memory); and

a processor, to perform a method, comprising:

selecting, on a dynamic basis upon arrival of incoming data, one of a plurality of write paths for the incoming data, comprising:

a first write path comprising traversal of the incoming data from NVRAM (nonvolatile random-access memory) to SLC (single level cell) flash memory to QLC (quad level cell) flash memory;

a second write path comprising traversal of the incoming data from the NVRAM to the QLC flash memory, bypassing the SLC flash memory; and

a third write path comprising traversal of the incoming data to the SLC flash memory, bypassing the NVRAM, to the QLC flash memory; and

writing the incoming data via the selected write path.

16. The storage system of claim 15 , wherein the method further comprises:

allocating a portion of flash memory to operate in SLC mode as a roaming region to cycle through flash memory of the storage system, on a basis of at least one from a group consisting of: period of time-driven, wear-driven, even usage of available SLC flash memory, and system-guaranteed minimum performance level for the SLC flash memory.

17. The storage system of claim 15 , wherein the SLC flash memory is a buffer in a time range of less than a threshold value for writing the incoming data to the QLC flash memory in the first write path and the third write path.

18. The storage system of claim 15 , wherein the selecting is influenced according to at least one criterion from a group consisting of:

storage system activity relative to the SLC flash memory;

select the first write path when the SLC flash memory is busy;

select the second write path, including bypassing the SLC flash memory, when the SLC flash memory has greater than a threshold amount of wear;

select a write path based on capacity of one of the NVRAM, the SLC flash memory, and the QLC flash memory; and

select a write path based on fullness of one of the NVRAM, the SLC flash memory, and the QLC flash memory.

19. The storage system of claim 15 , wherein the method further comprises:

allocating portions of the SLC flash memory with dynamic sizing, for the first write path and the third write path.

20. The storage system of claim 15 , wherein the method further comprises:

writing out from the SLC flash memory to the QLC flash memory, for the first write path and the third write path, in response to space utilization of the SLC flash memory attaining a threshold.