IP Library Granted Patent US 12,068,052
Granted Patent B2
US 12,068,052 · App. 17/682,064 · Granted Aug 20, 2024

Preserving blocks experiencing program failure in memory devices

Inventors: Pranam Shetty (Udupi, IN); Arunkumar B (Bangalore, IN); Haritima Swapnil (Bangalore, IN)
Assignee: Micron Technology, Inc.
G11C29/789G11C16/102G11C16/26G11C29/42G11C29/76G11C2029/1202
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Quick Facts
Patent No.
US 12,068,052
App. No.
17/682,064
Granted
Aug 20, 2024
Kind
B2
Abstract

A system and method for preserving block experiencing wordline failure in memory devices. An example method includes performing, by a processor, a write operation to program data to a set of memory cells addressable by a first wordline of a plurality of wordlines of a block of a memory device; determining that a program fault occurred during the write operation; determining a number of wordlines referenced by a program fault data structure that are associated with the block; and responsive to determining that the number of wordlines fails to satisfy a threshold criterion, releasing a second wordline of the plurality of wordlines to be available for write operations.

Claims (69)

1. A method comprising:

identifying, using a write pointer, a block of a plurality of blocks of a memory device;

performing a write operation to program data to a set of memory cells addressable by a first wordline of a plurality of wordlines associated with the block;

determining that a program fault occurred during the write operation;

determining a number of wordlines referenced by a program fault data structure that are associated with the block;

responsive to determining that the number of wordlines fails to satisfy a threshold criterion, releasing a second wordline of the plurality of wordlines to be available for write operations;

appending the second wordline to a set of wordlines associated with the block that are available for write operations; and

udating the write pointer to select, among the set of wordlines that are available for write operations, a new wordline associated with the block.

2. The method of claim 1 , further comprising:

responsive to determining that the number of wordlines satisfies the threshold criterion, marking the block in a grown bad block (GBB) data structure.

3. The method of claim 1 , further comprising:

determining whether the block is listed in the program fault data structure; and

responsive to determining that the block is not listed in the program failure data structure, performing the write operation on a third wordline of the plurality of wordlines.

4. The method of claim 1 , further comprising:

responsive to determining that the number of wordlines fails to satisfy the threshold criterion, listing the first wordline the program fault data structure.

5. The method of claim 1 , further comprising:

receiving, by a processor, a write command;

identifying a third wordline of the block that addresses different set of memory cells onto which to program the data; and

responsive to determining that the third wordline is listed in the program fault data structure, identifying a different wordline onto which to program the data.

6. The method of claim 1 , further comprising:

responsive to determining that the number of wordlines satisfies the threshold criterion, removing all entries associated with the block from the program fault data structure.

7. The method of claim 1 , further comprising:

maintaining a spare wordline data structure, wherein each entry in the spare wordline data structure is associated with an inactive wordline capable of replacing a defective wordline in the block.

8. A system comprising:

a memory device; and

a processing device, operatively coupled with the memory device, to perform operations comprising:

identifying, using a writer pointer, a block of a plurality of blocks of a memory device

performing a write operation to program data to a set of memory cells addressable by a first wordline of a plurality of wordlines associated with the block;

determining that a program fault occurred during the write operation;

determining a number of wordlines referenced by a program fault data structure that are associated with the block;

responsive to determining that the number of wordlines fails to satisfy a threshold criterion, selecting a second wordline of the plurality of wordlines that are unavailable for write operations;

appending the second wordline to a set of wordlines that are available for write operations; and

updating the write pointer to select, among the set of wordlines that are available for write operations, a new wordline associated with the block.

9. The system of claim 8 , wherein the processing device is to further perform operations comprising:

responsive to determining that the number of wordlines satisfies the threshold criterion, marking the block in a grown bad block (GBB) data structure.

10. The system of claim 8 , wherein the processing device is to further perform operations comprising:

determining whether the block is listed in the program fault data structure; and

responsive to determining that the block is not listed in the program failure data structure, performing the write operation on a third wordline of the plurality of wordlines.

11. The system of claim 8 , wherein the processing device is to further perform operations comprising:

responsive to determining that the number of wordlines fails to satisfy the threshold criterion, listing the first wordline the program fault data structure.

12. The system of claim 8 , wherein the processing device is to further perform operations comprising:

receiving a write command;

identifying a third wordline of the block that addresses different set of memory cells onto which to program the data; and

responsive to determining that the third wordline is listed in the program fault data structure, identifying a different wordline onto which to program the data.

13. The system of claim 8 , wherein the processing device is to further perform operations comprising:

responsive to determining that the number of wordlines satisfies the threshold criterion, removing all entries associated with the block from the program fault data structure.

14. The system of claim 8 , wherein the processing device is to further perform operations comprising:

maintaining a spare wordline data structure, wherein each entry in the spare wordline data structure is associated with an inactive wordline capable of replacing a defective wordline in the block.

15. A non-transitory computer-readable medium storing instructions, which when executed by a processing device, cause the processing device to perform operations comprising:

identifying, using a write pointer, a block of a plurality of blocks of a memory device;

performing a write operation to program data to a set of memory cells addressable by a first wordline of a plurality of wordlines associated with the block;

determining that a program fault occurred during the write operation;

determining a number of wordlines referenced by a program fault data structure that are associated with the block;

responsive to determining that the number of wordlines fails to satisfy a threshold criterion, selecting a second wordline of the plurality of wordlines that are unavailable for write operations;

appending the second wordline to a set of wordlines that are available for write operations; and

updating the write pointer to select, among the set of wordlines that are available for write operations, a new wordline associated with the block.

16. The non-transitory computer-readable medium of claim 15 , wherein the processing device is to further perform operations comprising:

responsive to determining that the number of wordlines satisfies the threshold criterion, marking the block in a grown bad block (GBB) data structure.

17. The non-transitory computer-readable medium of claim 15 , wherein the processing device is to further perform operations comprising:

determining whether the block is listed in the program fault data structure; and

responsive to determining that the block is not listed in the program fault data structure, performing the write operation on a third wordline of the plurality of wordlines.

18. The non-transitory computer-readable medium of claim 15 , wherein the processing device is to further perform operations comprising:

responsive to determining that the number of wordlines fails to satisfy the threshold criterion, listing the first wordline the program fault data structure.

19. The non-transitory computer-readable medium of claim 15 , wherein the processing device is to further perform operations comprising:

receiving a write command;

identifying a third wordline of the block that addresses different set of memory cells onto which to program the data; and

responsive to determining that the third wordline is listed in the program fault data structure, identifying a different wordline onto which to program the data.

20. The non-transitory computer-readable medium of claim 15 , wherein the processing device is to further perform operations comprising:

responsive to determining that the number of wordlines satisfies the threshold criterion, removing all entries associated with the block from the program fault data structure.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 1, 2022
From: SHETTY, PRANAM; B., ARUNKUMAR; SWAPNIL, HARITIMA
To: MICRON TECHNOLOGY, INC.
Reel/Frame 060967/0750 →
Priority Claims (1)
IN 202141059628 · Dec 21, 2021 · national
Continuity (1)
Related Publication 20230197186A1 · Jun 22, 2023