Method for manufacturing semiconductor device structure

1. A method of manufacturing a semiconductor device structure, comprising:

providing a substrate having a first surface and a second surface opposite to the first surface, wherein the substrate comprises a first well region with a first conductive type;

forming an isolation feature extending from the second surface of the substrate;

forming a first transistor and a second transistor adjacent to the second surface of the substrate;

forming a first doped region under the isolation feature, wherein the first doped region has a second conductive type different from the first conductive type;

providing a circuit structure on the first surface of the substrate, wherein the circuit structure is configured to transmit or provide a voltage electrically coupled with the first doped region;

forming a first conductive feature extending between the first surface of the substrate and the first doped region, wherein the first conductive feature electrically couples with the circuit structure;

forming a second well region in the substrate and surrounding the first doped region; and

forming a third well region spaced apart from the second surface of the substrate and in contact with the second well region.

2. The method of claim 1 , further comprising:

forming a second doped region in the third well region; and

forming a second conductive feature extending between the first surface of the substrate and the second doped region.