Micro-acoustic wafer-level package and method of manufacture

1. A micro-acoustic wafer-level package, comprising:

a base wafer (BW) with electric structures (ES) for micro-acoustic devices on a top surface thereof, each electric structure being assigned to a respective device area (DA);

a frame structure (FS) sitting on top of the base wafer enclosing each particular device area; and

a cap wafer (CW) bonded to the frame structure to form a closed cavity (CV) over each device area and to enclose within the cavity the device structures arranged on the respective device area;

wherein:

the base wafer comprises a piezoelectric functional layer;

the cap wafer comprises a glass material having a polymer coating (PC) on a bottom surface thereof, and wherein the glass material of the cap wafer comprises barium (Ba) as an additional element; and

the frame structure comprises a polymer.

2. The micro-acoustic wafer-level package of claim 1 , wherein the polymer coating is formed from an UV-curable photoresist.

3. The micro-acoustic wafer-level package of claim 1 , wherein the glass material of the cap wafer comprises additional elements chosen from first and second main group of the periodic system, to provide a coefficient of thermal expansion (CTE) that is matched to the CTE of the base wafer.

4. The micro-acoustic wafer-level package of claim 1 , wherein the electric structures comprise a surface acoustic wave (SAW) transducer, wherein the base wafer is a piezoelectric wafer, and wherein the glass material of the cap wafer has a CTE that is matched to the CTE of the piezoelectric wafer.

5. The micro-acoustic wafer-level package of claim 1 , wherein the base wafer comprises a carrier wafer, wherein the electric structures comprise a surface acoustic wave (SAW) transducer or a bulk acoustic wave (BAW) resonator realized within the piezoelectric functional layer, and wherein a coefficient of thermal expansion (CTE) of the cap wafer is adapted to the CTE of the carrier wafer.

6. The micro-acoustic wafer-level package of claim 1 , wherein the base wafer comprises a wafer of LiTaO3 or LiNbO3.

7. The micro-acoustic wafer-level package of claim 1 , wherein the base wafer comprises a wafer of LiTaO3 or LiNbO3.

8. The micro-acoustic wafer-level package of claim 1 , wherein the micro-acoustic wafer-level package is used to singulate a micro-acoustic device, wherein each single device comprises exactly one cavity with respectively enclosed electric structures.

9. A method of forming a micro-acoustic wafer-level package, the method comprising:

providing a base wafer with an array of device areas on a top surface thereof assigned to a respective micro-acoustic device each forming a frame structure on the top surface that encloses each particular device area with respective electric structures;

providing a cap wafer having a coefficient of thermal expansion (CTE) adapted to the CTE of the base wafer and being provided with a UV-curable polymer coating on an underside thereof;

arranging the cap wafer on the frame structure in an arrangement; and

wafer-bonding the cap wafer with the polymer coating to the frame structure and curing the polymer coating by exposing the arrangement to UV light.

10. The method of claim 9 , wherein wafer-bonding of the cap wafer with the polymer coating to the frame structure comprises applying UV light and uni-axial pressure at the same time to the arrangement.

11. The method of claim 9 , wherein the cap wafer includes a glass material comprising additional elements chosen from first and second main group of the periodic system, to provide a CTE that is matched to the CTE of the base wafer.

12. The method of claim 9 , wherein the electric structures comprise a SAW transducer, wherein the base wafer is a piezoelectric wafer, and wherein a glass material of the cap wafer has a CTE that is matched to the CTE of the piezoelectric wafer.

13. The method of claim 9 , wherein the base wafer comprises a carrier wafer and a piezoelectric functional layer, wherein the electric structures comprise a SAW transducer or a BAW resonator realized within the piezoelectric functional layer, and wherein the CTE of the cap wafer is adapted to the CTE of the carrier wafer.

14. The method of claim 9 , wherein the cap wafer includes a glass material comprising barium (Ba) as an additional element.

15. The method of claim 9 , wherein the base wafer comprises a wafer of LiTaO3 or LiNbO3, wherein the base wafer comprises a wafer of LiTaO3 or LiNbO3.

16. A device, comprising:

a base wafer comprising a top surface, wherein the top surface comprises an array of device areas assigned to respective micro-acoustic devices, and wherein the respective micro-acoustic devices form a frame structure on the top surface that encloses corresponding device areas of the array of device areas with respective electric structures; and

a cap wafer having a coefficient of thermal expansion (CTE) adapted to a CTE of the base wafer, wherein the cap wafer has an underside coated with a UV-curable polymer coating, and wherein the cap wafer is wafer-bonded to the frame structure via the UV-curable polymer coating.

17. The device of claim 16 , wherein the cap wafer includes a glass material comprising additional elements chosen from first and second main group of the periodic system, to provide a CTE that is matched to the CTE of the base wafer.

18. The device of claim 16 , wherein the electric structures comprise a SAW transducer, wherein the base wafer is a piezoelectric wafer, and wherein a glass material of the cap wafer has a CTE that is matched to the CTE of the piezoelectric wafer.

19. The device of claim 16 , wherein the base wafer comprises a carrier wafer and a piezoelectric functional layer, wherein the electric structures comprise a SAW transducer or a BAW resonator realized within the piezoelectric functional layer, and wherein the CTE of the cap wafer is adapted to the CTE of the carrier wafer.

20. A micro-acoustic wafer-level package, comprising:

a base wafer (BW) with electric structures (ES) for micro-acoustic devices on a top surface thereof, each electric structure being assigned to a respective device area (DA);

a frame structure (FS) sitting on top of the base wafer enclosing each particular device area; and

a cap wafer (CW) bonded to the frame structure to form a closed cavity (CV) over each device area and to enclose within the cavity the device structures arranged on the respective device area;

wherein:

the base wafer comprises a piezoelectric functional layer;

the cap wafer comprises a glass material having a polymer coating (PC) on a bottom surface thereof

the electric structures comprise a surface acoustic wave (SAW) transducer, wherein the base wafer is a piezoelectric wafer, and wherein the glass material of the cap wafer has a CTE that is matched to the CTE of the piezoelectric wafer; and

the frame structure comprises a polymer.