IP Library › Granted Patent US 12,072,762
Granted Patent B2
US 12,072,762 · App. 17/884,076 · Granted Aug 27, 2024

Error-handling management during copyback operations in memory devices

Inventors: Patrick R. Khayat (San Diego, CA); Vamsi Pavan Rayaprolu (Santa Clara, CA)
Assignee: Micron Technology, Inc.
G06F11/1044G11C29/08
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Quick Facts
Patent No.
US 12,072,762
App. No.
17/884,076
Granted
Aug 27, 2024
Kind
B2
Abstract

Systems and methods are disclosed including a memory device and a processing device operatively coupled to the memory device. The processing device can perform operations comprising selecting a source set of memory cells of the memory device, performing a data integrity check on the source set of memory cells to obtain a data integrity metric value; responsive to determining that a data integrity metric value satisfies the threshold criterion, performing a first error-handling operation on the data stored on the source set of memory cells; responsive to determining that the first error-handling operation fails to correct the data, performing a second error-handling operation on the data; and responsive to determining that the second error-handling operation corrected the data, causing the memory device to copy the corrected data to a destination set of memory cells of the memory device.

Claims (46)

1. A system comprising:

a memory device; and

a processing device, operatively coupled to the memory device, to perform operations comprising:

selecting a source set of memory cells of the memory device, wherein the source set of memory cells are configured to store a first number of bits per memory cell;

performing a data integrity check on the source set of memory cells to obtain a data integrity metric value;

determining whether the data integrity metric value satisfies a threshold criterion;

responsive to determining that the data integrity metric value satisfies the threshold criterion, performing a first error-handling operation on the data stored on the source set of memory cells to generate corrected data;

responsive to determining that the first error-handling operation fails to correct the data, performing a second error-handling operation on the data; and

responsive to determining that the second error-handling operation corrects the data, causing the memory device to copy the corrected data to a destination set of memory cells of the memory device, wherein the destination set of memory cells are configured to store a second number of bits per memory cell, wherein the second number of bits per memory cell is greater than the first number of bits per memory cell.

2. The system of claim 1 , wherein the first error-handling operation comprises an error correction code (ECC) operation.

3. The system of claim 1 , wherein the second error-handling operation comprises an error-handling operation that does not use latch resources.

4. The system of claim 1 , wherein the processing device is to perform further operations comprising:

responsive to determining that the second error-handling operation fails to correct the data, performing a third error-handling operation on the data, wherein the third error-handling operation comprises an error-handling operation that uses latch resources.

5. The system of claim 4 , wherein the processing device is to perform further operations comprising:

responsive to determining that the third error-handling operation corrects the data, causing the memory device to copy the corrected data to a new destination set of memory cells of the memory device, wherein the new destination set of memory cells are configured to store the first number of bits per memory cell.

6. The system of claim 4 , wherein the processing device is to perform further operations comprising:

responsive to determining that the second error-handling operation fails to correct the data, retiring the source set of memory cells of the memory device.

7. The system of claim 1 , wherein the source set of memory cells are configured as single-level cell (SLC) memory.

8. The system of claim 1 , wherein the destination set of memory cells are configured as higher-level cell (HLC) memory.

9. The system of claim 1 , wherein the data integrity metric value reflects at least one of a bit error count (BEC) value or a raw bit error rate (RBER) value.

10. A method, comprising:

selecting, by a processor, a source set of memory cells of a memory device, wherein the source set of memory cells are configured to store a first number of bits per memory cell;

performing a data integrity check on the source set of memory cells to obtain a data integrity metric value;

determining whether the data integrity metric value satisfies a threshold criterion;

responsive to determining that the data integrity metric value satisfies the threshold criterion, performing a first error-handling operation on the data stored on the source set of memory cells to generate corrected data;

responsive to determining that the first error-handling operation fails to correct the data, performing a second error-handling operation on the data; and

responsive to determining that the second error-handling operation corrects the data, causing the memory device to copy the corrected data to a destination set of memory cells of the memory device, wherein the destination set of memory cells are configured to store a second number of bits per memory cell, wherein the second number of bits per memory cell is greater than the first number of bits per memory cell.

11. The method of claim 10 , wherein the first error-handling operation comprises an error correction code (ECC) operation.

12. The method of claim 10 , wherein the second error-handling operation comprises an error-handling operation that does not use latch resources.

13. The method of claim 10 , further comprising:

responsive to determining that the second error-handling operation fails to correct the data, performing a third error-handling operation on the data, wherein the third error handling operation comprises an error-handling operation that uses latch resources.

14. The method of claim 13 , further comprising:

responsive to determining that the third error-handling operation corrects the data, causing the memory device to copy the corrected data to a new destination set of memory cells of the memory device, wherein the new destination set of memory cells are configured to store the first number of bits per memory cell.

15. The method of claim 13 , responsive to determining that the second error-handling operation fails to correct the data, retiring the source set of memory cells of the memory device.

16. The method of claim 10 , wherein the data integrity metric value reflects at least one of a bit error count (BEC) value or a raw bit error rate (RBER) value.

17. The method of claim 10 , wherein the source set of memory cells are configured as single-level cell (SLC) memory.

18. The method of claim 10 , wherein the destination set of memory cells are configured as higher-level cell (HLC) memory cells.

19. A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device operatively coupled to a memory, performs operations comprising:

selecting a source set of memory cells of a memory device, wherein the source set of memory cells are configured to store a first number of bits per memory cell;

performing a data integrity check on the source set of memory cells to obtain a data integrity metric value;

determining whether the data integrity metric value satisfies a threshold criterion;

responsive to determining that the data integrity metric value satisfies the threshold criterion, performing a first error-handling operation on the data stored on the source set of memory cells to generate corrected data;

responsive to determining that the first error-handling operation fails to correct the data, performing a second error-handling operation on the data; and

responsive to determining that the second error-handling operation corrects the data, causing the memory device to copy the corrected data to a destination set of memory cells of the memory device, wherein the destination set of memory cells are configured to store a second number of bits per memory cell, wherein the second number of bits per memory cell is greater than the first number of bits per memory cell.

20. The non-transitory computer-readable storage medium of claim 19 , wherein the processing device is to perform further operations comprising:

responsive to determining that the second error-handling operation fails to correct the data, performing a third error-handling operation on the data, wherein the third error-handling operation comprises an error-handling operation that uses latch resources.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 23, 2022
From: KHAYAT, PATRICK R.; RAYAPROLU, VAMSI PAVAN
To: MICRON TECHNOLOGY, INC.
Reel/Frame 060873/0411 →
Continuity (1)
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