Imaging device and electronic device
An imaging device with an arithmetic function in which the circuit size is reduced is provided. The imaging device includes a plurality of pixel blocks. Each of the pixel blocks includes N (N is an integer greater than or equal to 1) first circuits, N second circuits, and a third circuit. Each of the first circuits includes a photoelectric conversion device, and the photoelectric conversion device has a function of converting incident light into an electrical signal and has a function of outputting a first signal that is obtained by binarizing the electrical signal to the second circuit. Each of the second circuits has a function of outputting a second signal that is obtained by multiplying the first signal by a weight coefficient to a third circuit. When the N second signals are output to a wiring electrically connected to the third circuit, addition is performed. The first circuit includes a transistor, and an OS transistor is preferably used as the transistor.
1. An imaging device comprising a plurality of pixel blocks, wherein each of the plurality of pixel blocks comprises N first circuits, N second circuits, a third circuit, and a wiring electrically connected to the third circuit,
wherein N is an integer greater than or equal to 1,
wherein each of the N first circuits comprises a photoelectric conversion device,
wherein the photoelectric conversion device is configured to convert incident light into an electrical signal,
wherein the K-th first circuit is configured to output a first signal that is obtained by binarizing the electrical signal to the K-th second circuit via a first transistor provided in the K-th first circuit,
wherein K is an integer greater than or equal to 1 and less than or equal to N,
wherein each of the N second circuits is configured to generate a second signal by multiplying the first signal by a weight coefficient and output the second signal to the wiring,
wherein the N second signals are added by being output to the wiring,
wherein one of a source and a drain of the first transistor is electrically connected to a first terminal of a fourth circuit provided in the K-th second circuit, and
wherein the other of the source and the drain of the first transistor is electrically connected to a first switch provided in the K-th second circuit.
2. The imaging device according to claim 1 ,
wherein the K-th first circuit is stacked over the K-th second circuit, and
wherein a second terminal of the fourth circuit provided in the K-th second circuit is electrically connected to one electrode of a capacitor provided in the K-th second circuit via the first switch provided in the K-th second circuit.
3. The imaging device according to claim 1 ,
wherein the N first circuits are stacked over the N second circuits and the third circuit.
4. The imaging device according to claim 1 ,
wherein each of the first circuits comprises a second transistor, and
wherein the second transistor comprises a metal oxide in a channel formation region.
5. An imaging device comprising a plurality of pixel blocks,
wherein each of the plurality of pixel blocks comprises N first circuits, N second circuits, a third circuit, and a wiring electrically connected to the third circuit,
wherein N is an integer greater than or equal to 1,
wherein each of the N first circuits comprises a photoelectric conversion device, a first transistor, a second transistor, and a third transistor,
wherein the photoelectric conversion device is configured to convert incident light into an electrical signal,
wherein the K-th first circuit is configured to output a first signal to the K-th second circuit,
wherein K is an integer greater than or equal to 1 and less than or equal to N,
wherein the photoelectric conversion device is electrically connected to one of a source and a drain of the first transistor,
wherein the other of the source and the drain of the first transistor is electrically connected to a gate of the second transistor,
wherein one of a source and a drain of the second transistor is electrically connected to one of a source and a drain of the third transistor,
wherein the other of the source and the drain of the third transistor is electrically connected to the second circuit,
wherein each of the N second circuits is configured to generate a second signal by multiplying the first signal by a weight coefficient and output the second signal to the wiring, and
wherein the N second signals are added by being output to the wiring.
6. The imaging device according to claim 5 ,
wherein the K-th first circuit is stacked over the K-th second circuit.
7. The imaging device according to claim 5 ,
wherein the N first circuits are stacked over the N second circuits and the third circuit.
8. The imaging device according to claim 5 ,
wherein at least one of the first transistor, the second transistor, and the third transistor comprises a metal oxide in a channel formation region.
9. An imaging device comprising a plurality of pixel blocks,
wherein each of the plurality of pixel blocks comprises N first circuits, N second circuits, a third circuit, and a wiring electrically connected to the third circuit,
wherein N is an integer greater than or equal to 1,
wherein each of the N first circuits comprises a photoelectric conversion device, a first transistor, a second transistor, and a third transistor,
wherein the photoelectric conversion device is configured to convert incident light into an electrical signal,
wherein the K-th first circuit is electrically connected to the K-th second circuit,
wherein K is an integer greater than or equal to 1 and less than or equal to N,
wherein the photoelectric conversion device is electrically connected to one of a source and a drain of the first transistor,
wherein the other of the source and the drain of the first transistor is electrically connected to a gate of the second transistor,
wherein one of a source and a drain of the second transistor is electrically connected to one of a source and a drain of the third transistor,
wherein the other of the source and the drain of the third transistor is electrically connected to the second circuit,
wherein each of the N second circuits is electrically connected to the wiring, and
wherein each of the N second circuits comprises an XNOR circuit and a capacitor.
10. The imaging device according to claim 9 ,
wherein the K-th first circuit is stacked over the K-th second circuit.
11. The imaging device according to claim 9 ,
wherein the N first circuits are stacked over the N second circuits and the third circuit.
12. The imaging device according to claim 9 ,
wherein at least one of the first transistor, the second transistor, and the third transistor comprises a metal oxide in a channel formation region.