Solid-state imaging apparatus and method for manufacturing the solid-state imaging apparatus having sealing portion disposed in bonded members

1. An apparatus comprising:

a first substrate;

a second substrate;

a first structure arranged between the first substrate and the second substrate, and including a first insulator and a first conductive pattern; and

a second structure arranged between the first structure and the second substrate, including a second insulator and a second conductive pattern, and bonded to the first structure,

wherein at a bonding plane, the first insulator contacts the second insulator, and the first conductive pattern contacts the second conductive pattern, and

wherein in a cross section view crossing the bonding plane, a seal portion is arranged between the first substrate and the second substrate.

2. The apparatus according to claim 1 ,

wherein the first structure includes a third conductive pattern, and the second structure includes a fourth conductive pattern, and

wherein the seal portion includes a structure in which the third conductive pattern and the fourth conductive pattern are in contact with each other.

3. The apparatus according to claim 1 ,

wherein the first structure includes a third insulator, and the second structure includes a fourth insulator,

wherein the third insulator includes a silicon nitride film, a silicon oxynitride film, or a silicon nitride film and silicon oxynitride film, and the fourth insulator includes a silicon nitride film, a silicon oxynitride film, or a silicon nitride film and silicon oxynitride film, and

wherein the seal portion includes a structure in which the third insulator and the fourth insulator are in contact with each other.

4. The apparatus according to claim 1 , wherein the seal portion is arranged around an area where the first conductive pattern and the second conductive pattern are electrically connected to each other.

5. The apparatus according to claim 4 , wherein the seal portion surrounds the area.

6. The apparatus according to claim 1 ,

wherein in the cross section view, the seal portion is arranged between an edge of the apparatus and an area , and

wherein the seal portion reduces water invasion into the area from outside of the apparatus.

7. The apparatus according to claim 1 , wherein a first element of the first substrate and a second element of the second substrate are electrically connected to each other via the first conductive pattern and the second conductive pattern.

8. The apparatus according to claim 1 , wherein the seal portion includes a plurality of parts having a width smaller than a predetermined width and a plurality of parts having a width larger than the predetermined width.

9. The apparatus according to claim 8 , wherein the seal portion is configured such that at least two of the plurality of parts having the width smaller than the predetermined width and at least two of the plurality of parts having the width larger than the predetermined width are alternately arranged in a direction crossing the bonding plane.

10. The apparatus according to claim 8 , wherein the plurality of parts having the width smaller than the predetermined width are plugs and the plurality of parts having the width larger than the predetermined width are wirings.

11. The apparatus according to claim 1 , wherein the first conductive pattern and the second conductive pattern are mainly composed of copper.

12. The apparatus according to claim 1 , wherein the first insulator includes a silicon oxide film, a silicon oxynitride film, a silicon nitride film, a silicon oxide film and a silicon oxynitride film, a silicon oxide film and a silicon nitride film, a silicon oxynitride film and a silicon nitride film, or a silicon oxynitride film, a silicon oxide film and a silicon nitride film, and

the second insulator includes a silicon oxide film, a silicon oxynitride film, a silicon nitride film, a silicon oxide film and a silicon oxynitride film, a silicon oxide film and a silicon nitride film, a silicon oxynitride film and a silicon nitride film, or a silicon oxynitride film, a silicon oxide film and a silicon nitride film.

13. The apparatus according to claim 1 , wherein the first substrate includes a first semiconductor substrate and the second substrate includes a second semiconductor substrate.

14. The apparatus according to claim 13 , wherein a thickness of the first semiconductor substrate is smaller than that of the second semiconductor substrate.

15. The apparatus according to claim 13 , wherein the first semiconductor substrate includes an opening.

16. The apparatus according to claim 13 , wherein the second semiconductor substrate includes a through electrode.

17. A system comprising:

the apparatus according to claim 1 ; and

a processing unit configured to process a signal output from the apparatus.

18. The apparatus according to claim 1 , wherein the first substrate includes an opening.

19. The apparatus according to claim 18 ,

wherein in the cross section view, the seal portion is arranged between the opening and an edge of the first substrate.

20. The apparatus according to claim 1 , wherein in the cross section view, the seal portion extends from the first substrate to the second substrate.

21. The apparatus according to claim 20 , wherein the seal portion includes a first plug contacting the first substrate, a second plug contacting the second substrate, and a plurality of conductive patterns configured to connect the first plug and the second plug.

22. The apparatus according to claim 21 , wherein the first substrate includes an opening, and in the cross section view, the seal portion is arranged between the opening and an edge of the apparatus.

23. The apparatus according to claim 1 ,

wherein the first semiconductor substrate includes a photoelectric conversion unit.

24. A system comprising:

the apparatus according to claim 23 ; and

a processing unit configured to process a signal output from the apparatus.

25. An apparatus comprising:

a first substrate;

a second substrate;

a first structure arranged between the first substrate and the second substrate, and including a first insulator and a first conductive pattern; and

a second structure arranged between the first structure and the second substrate, including a second insulator and a second conductive pattern, and bonded to the first structure,

wherein the first substrate includes a plurality of openings,

wherein at a bonding plane, the first insulator contacts the second insulator, and the first conductive pattern contacts the second conductive pattern,

wherein the apparatus provides one of following configurations (a)-(d):

(a) the first structure includes a third conductive pattern, and the second structure includes a fourth conductive pattern,

wherein a portion having a structure in which the third conductive pattern contacts the fourth conductive pattern is arranged between the first substrate and the second substrate, and

wherein in a plan view, the portion is arranged between an edge of the first substrate and an opening which is closest to the edge of the first substrate among the plurality of openings;

(b) the first structure includes a third insulator, and the second structure includes a fourth insulator,

wherein the third insulator includes a silicon nitride film, a silicon oxynitride film, or a silicon nitride film and a silicon oxynitride film and the fourth insulator includes a silicon nitride film, a silicon oxynitride film, or a silicon nitride film and a silicon oxynitride film,

wherein a portion having a structure in which the third insulator contacts the fourth insulator is arranged between the first substrate and the second substrate, and

wherein in a plan view, the portion is arranged between an edge of the first substrate and an opening which is closest to the edge of the first substrate among the plurality of openings;

(c) the first structure includes a third conductive pattern, and the second structure includes a fourth insulator,

wherein the fourth insulator includes a silicon nitride film, a silicon oxynitride film, or a silicon nitride film and a silicon oxynitride film,

wherein a portion having a structure in which the third conductive pattern contacts the fourth insulator is arranged between the first substrate and the second substrate, and

wherein in a plan view, the portion is arranged between an edge of the first substrate and an opening which is closest to the edge of the first substrate among the plurality of openings; and

(d) the first structure includes a third insulator, and the second structure includes a fourth conductive pattern,

wherein the third insulator includes a silicon nitride film, a silicon oxynitride film, or a silicon nitride film and a silicon oxynitride film,

wherein a portion having a structure in which the third insulator contacts the fourth conductive pattern is arranged between the first substrate and the second substrate, and

wherein in a plan view, the portion is arranged between an edge of the first substrate and an opening which is closest to the edge of the first substrate among the plurality of openings.

26. The apparatus according to claim 25 , wherein in a cross section, the portion is arranged between an edge of the apparatus and an area where the first conductive pattern and the second conductive pattern are bonded.

27. The apparatus according to claim 25 ,

wherein in a cross section view crossing the bonding plane,, a seal portion is arranged between an edge of the apparatus and an area, and

wherein the seal portion reduces water invasion into the area from outside of the apparatus.

28. The apparatus according to claim 25 , wherein a first element of the first substrate and a second element of the second substrate are electrically connected to each other via the first conductive pattern and the second conductive pattern.

29. The apparatus according to claim 25 , wherein the portion includes a plurality of parts having a width smaller than a predetermined width and a plurality of parts having a width larger than the predetermined width.

30. The apparatus according to claim 29 , wherein the portion is configured such that at least two of the plurality of parts having the width smaller than the predetermined width and at least two of the plurality of parts having the width larger than the predetermined width are alternately arranged in a direction crossing the bonding plane.

31. The apparatus according to claim 29 , wherein the plurality of parts having the width smaller than the predetermined width are plugs and the plurality of parts having the width larger than the predetermined width are wirings.

32. The apparatus according to claim 25 , wherein the first conductive pattern and the second conductive pattern are mainly composed of copper.

33. The apparatus according to claim 25 , wherein the first insulator includes a silicon oxide film, a silicon oxynitride film, a silicon nitride film, a silicon oxide film and a silicon oxynitride film, a silicon oxide film and a silicon nitride film, a silicon oxynitride film and a silicon nitride film, or a silicon oxynitride film, a silicon oxide film and a silicon nitride film, and

the second insulator includes a silicon oxide film, a silicon oxynitride film, a silicon nitride film, a silicon oxide film and a silicon oxynitride film, a silicon oxide film and a silicon nitride film, a silicon oxynitride film and a silicon nitride film, or a silicon oxynitride film, a silicon oxide film and a silicon nitride film.

34. The apparatus according to claim 25 , wherein a thickness of the first substrate is smaller than that of the second substrate.

35. The apparatus according to claim 25 , wherein the second substrate includes a through electrode.

36. The apparatus according to claim 25 ,

wherein in a cross section view crossing the bonding plane, the portion is arranged between the edge of the first substrate and the opening which is closest to the edge of the first substrate among the plurality of openings.

37. A system comprising:

the apparatus according to claim 24 ; and

a processing unit configured to process a signal output from the apparatus.

38. The apparatus according to claim 25 , wherein, in a case where the apparatus provides the configuration (a), the first structure includes a plurality of fifth conductive patterns electrically connecting the third conductive pattern and the first substrate, and the second structure includes a plurality of sixth conductive patterns electrically connecting the fourth conductive pattern and the second substrate.

39. The apparatus according to claim 38 , wherein the portion including the third conductive pattern, the plurality of fifth conductive patterns, the fourth conductive pattern, and the plurality of sixth conductive patterns extends from the first substrate to the second substrate.

40. The apparatus according to claim 25 , wherein the apparatus provides the configuration (a) and the configuration (b).

41. The apparatus according to claim 25 , wherein the apparatus provides the configuration (c) and the configuration (d).

42. The apparatus according to claim 25 , wherein the first semiconductor substrate includes a photoelectric conversion unit.

43. A system comprising:

the apparatus according to claim 42 ; and

a processing unit configured to process a signal output from the apparatus.

44. An apparatus comprising:

a first member including a first structure including a first insulator and a first conductive pattern layer, and

a second member including a second structure including a second insulator and a second conductive pattern layer,

wherein the first member and the second member are bonded,

wherein at a bonding plane, at least a part of the first insulator contacts at least a part of the second insulator, and at least a part of the first conductive pattern layer contacts at least a part of the second conductive pattern layer,

wherein the first insulator comprises a silicon oxide film, a silicon oxynitride film, or a silicon nitride film,

wherein the second insulator comprises a silicon oxide film, a silicon oxynitride film, or a silicon nitride film,

wherein the first member includes a first semiconductor substrate and the second member includes a second semiconductor substrate,

wherein a thickness of the first semiconductor substrate is smaller than a thickness of the second semiconductor substrate,

wherein the first semiconductor substrate includes an opening, and

wherein in a cross section view crossing the bonding plane, the apparatus comprises a seal portion arranged between the opening and an edge of the apparatus, and the seal portion includes at least a part of the first conductive pattern layer and at least a part of the second conductive pattern layer contact with each other.

45. The apparatus according to claim 44 ,

wherein in the cross section view, the seal portion is arranged between the edge of the apparatus and a region, and

wherein at least a part of the first conductive pattern layer and at least a part of the second conductive pattern layer contact with each other in the region, and

wherein the region is configured to electrically connect the first member and the second member via the at least the part of the first conductive pattern layer and the at least the part of the second conductive pattern layer.

46. The apparatus according to claim 44 ,

wherein the seal portion reduces water invasion into the area from outside of the apparatus.

47. The apparatus according to claim 44 , wherein the first conductive pattern layer and the second conductive pattern layer are mainly composed of copper.

48. The apparatus according to claim 44 ,

wherein the first semiconductor substrate includes a photoelectric conversion unit,

wherein the first semiconductor substrate includes a first plane and a second plane opposite to the first plane, and

wherein a color filter layer is arranged on a side of the second plane of the first semiconductor substrate.

49. The apparatus according to claim 48 ,

wherein the color filter layer includes an opening connected to the opening of the first semiconductor substrate.

50. The apparatus according to claim 48 ,

wherein a microlens layer including a microlens is arranged on a side of the second plane of the first semiconductor substrate, and

wherein the microlens layer includes an opening connected to the opening of the first semiconductor substrate.

51. The apparatus according to claim 44 ,

wherein the second semiconductor substrate includes a through electrode.

52. A system comprising:

the apparatus according to claim 47 ; and

a processing unit configured to process a signal output from the apparatus.

53. A system comprising:

the apparatus according to claim 48 ; and

a processing unit configured to process a signal output from the apparatus.