IP Library Granted Patent US 12,075,655
Granted Patent B2
US 12,075,655 · App. 17/151,883 · Granted Aug 27, 2024

Organic light emitting diode display device

Inventors: Myoung Geun Cha (Seoul, KR); Sang Gun Choi (Suwon-si, KR); Sang Sub Kim (Suwon-si, KR); Ji Yeong Shin (Busan, KR); Yong Su Lee (Seoul, KR); Ki Seok Choi (Seoul, KR)
Assignee: SAMSUNG DISPLAY CO., LTD.
H10K59/1213H10K59/1216H10K59/123H10K59/124
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Quick Facts
Patent No.
US 12,075,655
App. No.
17/151,883
Granted
Aug 27, 2024
Kind
B2
Abstract

An organic light emitting diode display includes a first thin film transistor of which a channel is formed in a polycrystalline transistor, a second thin film transistor of which a channel is formed in an oxide semiconductor layer, an organic light emitting diode electrically connected to the first thin film transistor, a storage capacitor having a first electrode and a second electrode, wherein the second electrode of the storage capacitor is electrically connected to a gate electrode of the first thin film transistor, and an overlapping layer overlapping the oxide semiconductor layer in a plan view and receiving a positive voltage. The oxide semiconductor layer is positioned higher than the gate electrode of the first thin film transistor and the second electrode of the storage capacitor.

Claims (23)

1. An organic light emitting diode display, comprising:

a first thin film transistor disposed on a substrate, the first thin film transistor including a channel formed in a polycrystalline semiconductor layer;

a second thin film transistor disposed on the substrate, the second thin film transistor including a channel formed in an oxide semiconductor layer;

an organic light emitting diode electrically connected to the first thin film transistor;

a storage capacitor having a first electrode and a second electrode, wherein the second electrode of the storage capacitor is electrically connected to a gate electrode of the first thin film transistor; and

an overlapping layer overlapping the oxide semiconductor layer in a plan view and receiving a positive voltage,

wherein the overlapping layer is disposed under the oxide semiconductor layer, and

wherein the oxide semiconductor layer is positioned higher than the gate electrode of the first thin film transistor and the second electrode of the storage capacitor.

2. The organic light emitting diode display of claim 1 ,

wherein the organic light emitting diode receives an output current flowing through the first thin film transistor and emits light.

3. The organic light emitting diode display of claim 2 ,

wherein the storage capacitor maintains a voltage of the gate electrode of the first thin film transistor.

4. The organic light emitting diode display of claim 3 ,

wherein a driving voltage is applied to the first electrode of the storage capacitor and the overlapping layer, and

wherein the driving voltage is applied to the overlapping layer as the positive voltage.

5. The organic light emitting diode display of claim 3 , further comprising:

a voltage application line supplying the positive voltage to the overlapping layer.

6. The organic light emitting diode display of claim 3 ,

wherein the second thin film transistor includes a gate electrode electrically connected to the overlapping layer.

7. The organic light emitting diode display of claim 3 ,

wherein the second thin film transistor includes a first electrode electrically connected to the overlapping layer and the first thin film transistor.

8. The organic light emitting diode display of claim 3 ,

wherein the second thin film transistor includes a second electrode electrically connected to the overlapping layer and the storage capacitor.

Priority Claims (1)
KR 10-2019-0015016 · Feb 8, 2019 · national
Continuity (2)
Division 16575643 · Sep 19, 2019
Related Publication 20210167153A1 · Jun 3, 2021