Circuits including non-linear components for electronic devices
The present disclosure is directed to display circuitry that can be formed on a flexible substrate. The circuitry includes a voltage divider formed from a first and second non-linear resistor device or a first and second transistor coupled in a diode configuration. The circuitry includes a driving thin film transistor coupled to the voltage divider. The non-linear resistor devices may include a lower electrode that is amorphous metal or a crystalline metal. The first and second transistor coupled in a diode configuration may have a lower electrode that is amorphous metal. Upper electrodes may be crystalline metal. The driving thin film transistors may have the lower electrode as amorphous or crystalline metal.
1. A circuit, comprising:
a first non-linear device;
a second non-linear device;
a first capacitor that includes a first plate electrode and a second plate electrode, the first plate electrode coupled between the first non-linear device and the second non-linear device;
a first amorphous metal transistor that includes a first terminal, a second terminal, and a control terminal coupled to the first plate electrode; and
a second amorphous metal transistor having a control terminal coupled to the first terminal of the first amorphous metal transistor.
2. The circuit of claim 1 , further comprising:
a first metal region that includes a data line and the second plate electrode.
3. The circuit of claim 2 , further comprising:
a first metal region between the first non-linear device and the second non-linear device, the first metal region including the first plate electrode and a first electrode of the control terminal; and a second metal region that includes the data line and the second plate electrode.
4. The circuit of claim 3 , wherein the second metal region includes a second electrode of the control terminal, the first metal region and the second metal region being located in different layers of the circuit; and
an interconnect electrically coupled between the first metal region and the second metal region.
5. The circuit of claim 4 , wherein the first metal region is an amorphous metal region.
6. The circuit of claim 5 , further comprising a second capacitor coupled in parallel with the device.
7. The circuit of claim 1 , wherein the first non-linear device includes one or more amorphous metal non-linear resistors and the second non-linear device includes one or more amorphous metal non-linear resistors.
8. A device, comprising:
a substrate;
a voltage divider on the substrate that includes a first non-linear resistor and a second non-linear resistor, the first non-linear resistor including a first amorphous metal electrode on the substrate and a second amorphous metal electrode on the substrate, the second non-linear resistor including a third amorphous metal electrode on the substrate and a fourth amorphous metal electrode on the substrate;
a driving thin film transistor coupled to the voltage divider; and
a dielectric layer on the first, second, third, and fourth amorphous metal electrode,
wherein the driving thin film transistor includes a first crystalline metal electrode on the dielectric layer.
9. The device of claim 8 wherein the driving thin film transistor includes a first amorphous metal electrode on the substrate, the first non-linear resistor includes a second amorphous metal electrode on the substrate and a third amorphous metal electrode on the substrate, the second non-linear resistor includes a fourth amorphous metal electrode on the substrate and a fifth amorphous metal electrode on the substrate.
10. A device, comprising:
a first non-linear device that includes a first plurality of amorphous metal regions;
a second non-linear device that includes a second plurality of amorphous metal regions;
a first metal region extending along a first direction and coupled between the first non-linear device and the second non-linear device, the first metal region including a first plate electrode;
a second metal region that includes a second plate electrode overlapping the first plate electrode along the first direction;
a channel conductor region extending along a second direction transverse to the first direction, a first region of the first metal region and the second metal region overlapping the channel conductor region; and
a third metal region extending along the second direction, wherein the third metal region is coupled to a second region of the first metal region and the second metal region overlapping the channel conductor region.
11. The device of claim 10 , further comprising:
a first insulator layer between the first region and the channel conductor region; and
a second insulator layer between the first metal region and the second metal region.
12. The device of claim 10 , wherein the first region is a region of amorphous metal.
13. The device of claim 10 , further comprising:
a fourth metal region overlapping the third metal region and the second region;
a first via extending between and electrically coupled between the fourth metal region and the second region; and
a second via extending between and electrically coupled between the fourth metal region and the third metal region.
14. The device of claim 13 , further comprising:
a substrate having a non-conductive surface, wherein the first plurality of amorphous metal regions and the second plurality of amorphous metal regions are on the non-conductive surface.
15. A device, comprising:
a first non-linear device that includes a first plurality of amorphous metal electrodes;
a second non-linear device that includes a second plurality of amorphous metal electrodes, the second non-linear device coupled to the first non-linear device;
a first electrode coupled between the first non-linear device and the second-non-linear device along a first direction, the first electrode extending along a second direction transverse to the first direction;
a second electrode overlapping the first electrode;
a first metal region extending along the first direction and coupled to the second electrode; and
an amorphous metal transistor that includes a channel conductor region and a first control electrode overlapping the channel conductor region, the first electrode and the first control electrode being a single continuous metal region,
wherein the amorphous metal transistor further includes a second control electrode overlapping the channel conductor region, and
wherein the first control electrode is coupled to the second control electrode.
16. The device of claim 15 , wherein the second electrode and the first metal region are a single continuous metal region.
17. The device of claim 15 , further comprising:
a second metal region that overlaps the first control electrode and the second control electrode, wherein the second metal region electrically couples the first control electrode to the second control electrode.
18. The device of claim 15 , wherein at least one electrode of the first control electrode and the second control electrode is a region of amorphous metal, at least one electrode of the first electrode and the second electrode is a region of amorphous metal.
19. The device of claim 15 , wherein at least one electrode of the first electrode and the second electrode is a region of crystalline metal.
20. The device of claim 19 , wherein the channel conductor region includes a semiconductor material.