Spin torque device having a spin current polarized at a canting angle of out-of-plane spin

1. A spin torque device comprising:

a reference magnetic layer (“reference layer”);

a magnetic layer having a switchable magnetisation direction along a first axis (“free layer”);

a non-magnetic layer between the reference layer and the free layer; and

a spin source layer adapted to generate a spin current from a current injected along a second axis perpendicular to the first axis; and

a capping layer, the free layer being between the spin source layer and the capping layer,

wherein electrons of different spins in the spin source layer are rearranged by scattering so the spin current is generated in a plane perpendicular to the second axis and polarized at an angle to the first axis, so that the spin current diffuses into the free layer to produce spin torque to switch the switchable magnetisation direction,

wherein the angle is a canting angle of out-of-plane spin and the canting angle is selected to correspond with a predetermined switching polarity, and a predetermined switching current density and a predetermined switching time.

2. A spin torque device of claim 1 , wherein the spin source layer is an antiferromagnetic layer.

3. A spin torque device of claim 2 , wherein the antiferromagnetic layer is non-collinear.

4. A spin torque device of claim 2 , wherein the antiferromagnetic layer is one of (001), (010), (111), and (100) oriented.

5. A spin torque device of claim 2 , wherein the antiferromagnetic layer is iridium-manganese compounds.

6. A spin torque device of claim 2 , wherein the antiferromagnetic layer is between about 1 nm to about 20 nm thick.

7. A spin torque device of claim 6 , wherein the antiferromagnetic layer is about 8 nm thick.

8. A spin torque device of claim 1 , wherein the spin source layer exhibits broken crystalline inversion symmetry.

9. A spin torque device of claim 8 , wherein the spin source layer is arranged to receive the current along a low-symmetry or lack-of-symmetry axis.

10. A spin torque device of claim 8 , wherein the spin source layer is formed from tungsten-telluride compounds.

11. A spin torque device of claim 1 , wherein the spin source layer produces out-of-plane spin accumulation when the current is an in-plane charge current.

12. A spin torque device of claim 1 , wherein the capping layer is a magnesium-oxide/silicon-dioxide layer.

13. A spin torque device of claim 1 , wherein the free layer exhibits perpendicular magnetic anisotropy.

14. A spin torque device of claim 13 , wherein the free layer is formed from one of:

a ferromagnetic material comprising at least one of Fe, Co, Ni, alloys of one or more of Fe, Co, Ni, and CoFeB alloy;

a ferrimagnetic material comprising at least one of CoPd, CoTb, FeCoTb, FeCoGd, and CoGd alloys, and the multilayers [Co/Tb] n , [Co/Pd] n and [Co/Gd] n ;

a ferromagnetic or ferrimagnetic insulator comprising YIG; or

a two-dimensional magnetic material comprising at least one of FeGeTe compounds and VSe 2 .

15. A spintronics device comprising:

a magnetic layer having a switchable magnetisation direction along a first axis, a first surface and opposite second surface (“free layer”);

a spin source layer adapted to generate a spin current from a current injected along a second axis perpendicular to the first axis, the first surface being adjacent the spin source layer,

a fixed layer; and

a non-magnetic layer disposed between the fixed layer and the free layer,

wherein electrons of different spins in the spin source layer are rearranged by scattering so the spin current is generated in a plane perpendicular to the second axis and polarized at an angle to the first axis, so that the spin current diffuses into the free layer to produce spin torque to switch the magnetisation direction,

wherein the angle is a canting angle of out-of-plane spin and the canting angle is selected to correspond with a predetermined switching polarity,

wherein the canting angle is selected to correspond with a predetermined switching current density and with a determined switching time, and

wherein the non-magnetic layer is sandwiched between the free layer and the fixed laver, the spintronics device further comprising a capping layer adjacent the fixed laver.