Chemical-resistant protective film-forming composition containing polymerization product of arylene compound having glycidyl group

1. A protective film-forming composition to a wet etching liquid for semiconductors, the protective film-forming composition comprising a solvent and a ring-opening polymerization product (C) from a reaction of a diepoxy compound (A) and a bi- or higher functional proton-generating compound (B),

wherein the ring-opening polymerization product (C) is represented by a unit structure of the following formula (A-1):

wherein, in formula (A-1):

T represents a divalent organic group derived from the bi- or higher functional proton-generating compound (B), and

Q represents a divalent organic group from the ring-opening polymerization of the diepoxy compound (A), and Q is represented by the following formula (A-2):

wherein, in formula (A-2), Ar represents a divalent arylene group, and n 1 and n 2 each independently represent an integer of 0 or 1.

2. The protective film-forming composition according to claim 1 , wherein Ar in formula (A-2) is represented by any of the following formula (A-3), the following formula (A-4) and the following formula (A-5):

wherein, in formula (A-3) to formula (A-5), X 1 , X 2 , X 3 and X 4 each independently represent an alkyl group having 1 to 6 carbon atoms; —W— represents any of a direct bond, —CH 2 —, —C(CH 3 ) 2 —, —C(CF 3 ) 2 —, —CO—, —O—, —S— or —SO 2 —; n 3 , n 5 and n 6 each independently represent an integer of 0 to 4; and n 4 represents an integer of 0 to 6.

3. A protective film-forming composition to a wet etching liquid for semiconductors, the protective film-forming composition comprising a solvent and a ring-opening polymerization product (C) from a reaction of a diepoxy compound (A) and a bi- or higher functional proton-generating compound (B),

wherein the ring-opening polymerization product (C) is represented by a unit structure of the following formula (A-1):

wherein, in formula (A-1):

Q represents a divalent organic group from the ring-opening polymerization of the diepoxy compound (A), and

T represents a divalent organic group derived from the bi- or higher functional proton-generating compound (B), and T is represented by the following formula (A-6) or the following formula (A-7):

wherein, in formula (A-6) or formula (A-7):

R 1 , R 2 , R 3 , R 4 and R 5 each independently represent a hydrogen atom, an alkyl group having 1 to 6 carbon atoms optionally substituted, an alkenyl group having 2 to 6 carbon atoms, a hydroxy group, an alkoxy group having 1 to 6 carbon atoms, a cyano group or a halogen atom, and R 2 and R 4 optionally bonded to each other to form a ring;

—Y 1 — and —Y 2 — each independently represent —O—, —S—, —OCO— or —COO—;

Z represents a direct bond or a divalent organic group;

n 7 and n 8 each independently represent an integer of 0 to 5;

n 9 and n 10 each independently represent an integer of 0 or 1; and

n 11 represents an integer of 0 to 4.

4. The protective film-forming composition according to claim 3 , wherein the divalent organic group represented by Z in formula (A-6) is represented by the following formula (A-8):

wherein, in formula (A-8), —V1— represents —O—, —S—, —S—S—, —CR 10 ═CR 11 —, —C(═CR 12 R 13 )— or —C═C—; R 10 , R 11 , R 12 and R 13 each independently represent a hydrogen atom or a methyl group: —V 2 — represents —O— or —S—; R 8 and R 9 each independently represent a hydrogen atom, an alkyl group having 1 to 6 carbon atoms optionally substituted, an alkenyl group having 2 to 6 carbon atoms, a hydroxy group, an alkoxy group having 1 to 6 carbon atoms, a cyano group or a halogen atom; n 12 represents an integer of 1 to 3; and n 13 represents an integer of 0 to 2.

5. The protective film-forming composition according to claim 2 , wherein Ar in formula (A-2) is represented by formula (A-3).

6. The protective film-forming composition according to claim 5 , wherein n 3 in formula (A-3) is 0.

7. The protective film-forming composition according to claim 3 , wherein —T— in formula (A-1) is represented by formula (A-6).

8. The protective film-forming composition according to claim 7 , wherein —Y 1 — and —Y 2 — in formula (A-6) are —COO—.

9. The protective film-forming composition according to claim 1 , which further comprises a cross-linking catalyst.

10. The protective film-forming composition according to claim 1 , which further comprises a cross-linking agent.

11. The protective film-forming composition according to claim 1 , which further comprises a surfactant.

12. A protective film which comprises a baked product of an applied film comprising the protective film-forming composition according to claim 1 .

13. A method for producing a substrate equipped with a resist pattern being used for manufacturing a semiconductor, which comprises the steps of:

applying the protective film-forming composition according to claim 1 on a semiconductor substrate and baking the applied composition to form a protective film as a resist underlayer film, and

forming a resist film on the protective film, followed by subjecting the resist and protective films to exposure and development to form a resist pattern.

14. A method for manufacturing a semiconductor device which comprises the steps of:

forming a protective film on a semiconductor substrate optionally carrying an inorganic film formed thereon with the protective film-forming composition according to claim 1 ,

forming a resist pattern on the protective film,

dry etching the protective film using the resist pattern as a mask to expose a surface of the inorganic film or the semiconductor substrate, and

wet etching the inorganic film or the semiconductor substrate with a wet etching liquid for semiconductors using the dry-etched protective film as a mask, followed by washing the wet-etched inorganic film and substrate.

15. The protective film-forming composition according to claim 3 , which further comprises a cross-linking catalyst.

16. The protective film-forming composition according to claim 3 , which further comprises a cross-linking agent.

17. The protective film-forming composition according to claim 3 , which further comprises a surfactant.

18. A protective film which comprises a baked product of an applied film comprising the protective film-forming composition according to claim 3 .

19. A method for producing a substrate equipped with a resist pattern being used for manufacturing a semiconductor, which comprises the steps of:

applying the protective film-forming composition according to claim 3 on a semiconductor substrate and baking the applied composition to form a protective film as a resist underlayer film, and

forming a resist film on the protective film, followed by subjecting the resist and protective films to exposure and development to form a resist pattern.

20. A method for manufacturing a semiconductor device which comprises the steps of:

forming a protective film on a semiconductor substrate optionally carrying an inorganic film formed thereon with the protective film-forming composition according to claim 3 ,

forming a resist pattern on the protective film,

dry etching the protective film using the resist pattern as a mask to expose a surface of the inorganic film or the semiconductor substrate, and

wet etching the inorganic film or the semiconductor substrate with a wet etching liquid for semiconductors using the dry-etched protective film as a mask, followed by washing the wet-etched inorganic film and substrate.