Mask assembly and method of manufacturing the same
A manufacturing method of a mask assembly includes forming a cell mask including masking patterns and a mesh frame including conductive patterns disposed to correspond to the masking patters and disposing the cell mask and the mesh frame on a mask frame. The forming the cell mask and the mesh frame includes forming a polymer layer, a conductive layer, and a hard masking layer, forming a mask pattern layer including etch patterns, and forming the cell mask and the mesh frame using the mask pattern layer.
1. A method of manufacturing a mask assembly, comprising:
forming a cell mask comprising a plurality of masking patterns and a mesh frame comprising a plurality of conductive patterns disposed to correspond to the plurality of masking patterns; and
disposing the cell mask and the mesh frame on a mask frame, the forming the cell mask and the mesh frame comprising:
forming a polymer layer on a base substrate;
forming a conductive layer directly on the polymer layer;
forming a hard masking layer directly on the conductive layer, the hard masking layer comprising a first polymer material;
etching the hard masking layer and the conductive layer and forming a mask pattern layer comprising etch patterns; and
etching the polymer layer using the mask pattern layer and forming the cell mask and the mesh frame.
2. The method of claim 1 , wherein the polymer layer comprises a second polymer material, and the second polymer material is different from the first polymer material.
3. The method of claim 1 , wherein the forming the cell mask and the mesh frame further comprises:
partially removing the mask pattern layer for the forming the mesh frame; and
separating the base substrate from the cell mask.
4. The method of claim 3 , wherein the mask pattern layer comprises:
a first pattern layer formed by etching the hard masking layer; and
a second pattern layer formed by etching the conductive layer.
5. The method of claim 4 , wherein the etching the polymer layer is performed using a gas which selectively etches the polymer layer among the first pattern layer and the polymer layer.
6. The method of claim 4 , wherein the partially removing the mask pattern layer comprises removing the first pattern layer from the mask pattern layer using a gas which selectively etches the first pattern layer among the first and second pattern layers.
7. The method of claim 6 , wherein the gas selectively etches the first pattern layer among the cell mask, the first pattern layer, and the second pattern layer.
8. The method of claim 4 , wherein the forming the cell mask and the mesh frame further comprises:
coating a photoresist on the hard masking layer; and
patterning the photoresist and forming an etch mask.
9. The method of claim 8 , wherein the etch patterns comprise:
a plurality of first patterns provided on the first pattern layer; and
a plurality of second patterns provided on the second pattern layer.
10. The method of claim 9 , wherein the forming the mask pattern layer comprises:
etching the hard masking layer using the etch mask and forming the first pattern layer comprising the plurality of first patterns; and
etching the conductive layer using the first pattern layer and forming the second pattern layer comprising the plurality of second patterns.
11. The method of claim 10 , wherein the forming the cell mask and the mesh frame further comprises removing the etch mask after the forming the first pattern layer.
12. The method of claim 10 , wherein the etching the hard masking layer comprises etching the hard masking layer using a gas.
13. The method of claim 12 , wherein the gas selectively etches the hard masking layer among the hard masking layer and the conductive layer.
14. The method of claim 10 , wherein the etching the conductive layer is performed using an etchant which selectively etches the conductive layer among the first pattern layer, the conductive layer, and the polymer layer.
15. The method of claim 10 , wherein the forming the cell mask and the mesh frame further comprises etching the plurality of second patterns after the forming the cell mask and forming the conductive patterns.
16. The method of claim 15 , wherein the etching the plurality of second patterns comprises etching the plurality of second patterns included in the second pattern layer using an etchant which selectively etches the second pattern layer among the first pattern layer, the second pattern layer, and the cell mask.