Metal-doped boron films
Exemplary deposition methods may include delivering a boron-containing precursor to a processing region of a semiconductor processing chamber. The methods may include delivering a dopant-containing precursor with the boron-containing precursor. The dopant-containing precursor may include a metal. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a doped-boron material on a substrate disposed within the processing region of the semiconductor processing chamber. The doped-boron material may include greater than or about 80 at. % of boron in the doped-boron material.
1. A deposition method comprising:
delivering a boron-containing precursor to a processing region of a semiconductor processing chamber;
delivering a dopant-containing precursor with the boron-containing precursor, wherein the dopant-containing precursor includes a metal;
forming a plasma of all precursors within the processing region of the semiconductor processing chamber; and
depositing a doped-boron material on a substrate disposed within the processing region of the semiconductor processing chamber, wherein the doped-boron material includes greater than or about 80 at. % of boron in the doped-boron material, and wherein a metal dopant concentration within the doped-boron material is maintained at less than or about 20 at. %.
2. The deposition method of claim 1 , wherein the metal in the dopant-containing precursor comprises one or more of tungsten, molybdenum, titanium, aluminum, cobalt, ruthenium, or tantalum.
3. The deposition method of claim 2 , wherein the dopant-containing precursor comprises tungsten hexafluoride or tungsten hexacarbonyl.
4. The deposition method of claim 1 , wherein the doped-boron material is characterized by an extinction coefficient of less than or about 0.45 at 633 nm.
5. The deposition method of claim 1 , further comprising:
delivering an oxygen-containing precursor or a nitrogen-containing precursor with the boron-containing precursor.
6. The deposition method of claim 5 , wherein an oxygen content or a nitrogen content within the doped-boron material is maintained at less than or about 10%.
7. The deposition method of claim 1 , wherein the doped-boron material is characterized by a hardness of greater than or about 25 GPa.
8. The deposition method of claim 7 , wherein the substrate comprises silicon oxide, the deposition method further comprising:
etching the silicon oxide, wherein the silicon oxide etches at a rate greater than or about five times the rate at which the doped-boron material is etched.
9. A deposition method comprising:
delivering a boron-containing precursor to a processing region of a semiconductor processing chamber;
forming a plasma of the boron-containing precursor within the processing region of the semiconductor processing chamber;
forming a first layer of boron-containing material on a substrate disposed within the processing region of the semiconductor processing chamber, wherein the first layer of boron-containing material is metal-dopant free;
adding a dopant-containing precursor with the boron-containing precursor, wherein the dopant-containing precursor includes a metal; and
forming a second layer of a doped-boron material on the first layer of boron-containing material to produce a bilayer film.
10. The deposition method of claim 9 , wherein a metal dopant concentration within the second layer of the bilayer film is maintained at less than or about 10 at. %.
11. The deposition method of claim 10 , wherein the metal in the dopant-containing precursor comprises one or more of tungsten, molybdenum, titanium, aluminum, cobalt, ruthenium, or tantalum.
12. The deposition method of claim 9 , wherein the second layer of the doped-boron material comprises greater than or about 50% of a thickness of the bilayer film.
13. The deposition method of claim 12 , wherein the doped-boron material is characterized by a hardness of greater than or about 25 GPa.
14. The deposition method of claim 9 , wherein the substrate comprises silicon oxide, the deposition method further comprising:
etching the silicon oxide.
15. The deposition method of claim 14 , wherein the silicon oxide etches at a rate greater than or about 1.5 times the rate at which the bilayer film is etched.
16. A deposition method comprising:
delivering a boron-containing precursor to a processing region of a semiconductor processing chamber;
delivering a dopant-containing precursor with the boron-containing precursor, wherein the dopant-containing precursor includes a metal;
forming a plasma of all precursors within the processing region of the semiconductor processing chamber; and
depositing a doped-boron material on a substrate disposed within the processing region of the semiconductor processing chamber, wherein the doped-boron material includes less than or about 20 at. % of metal in the doped-boron material.
17. The deposition method of claim 16 , wherein the metal in the dopant-containing precursor comprises one or more of tungsten, molybdenum, titanium, aluminum, cobalt, ruthenium, or tantalum.
18. The deposition method of claim 16 , wherein the doped-boron material is characterized by an extinction coefficient of less than or about 0.45 at 633 nm.
19. The deposition method claim 16 , wherein the substrate comprises silicon oxide, the deposition method further comprising:
etching the silicon oxide, wherein the silicon oxide etches at a rate greater than or about five times the rate at which the doped-boron material is etched.