Pixel and organic light emitting display device having the same
An organic light emitting display device includes a plurality of pixels. Each of the pixels includes an organic light emitting diode, first to third transistors, a storage capacitor, and a first capacitor. The second transistor includes a gate electrode receiving a first scan signal, a first electrode receiving a data signal, and a second electrode connected to a first electrode of the first transistor. The third transistor includes a gate electrode receiving a second scan signal, a first electrode connected to a second electrode of the first transistor, and a second electrode connected to a gate electrode of the first transistor. The storage capacitor includes a first electrode receiving a power voltage and a second electrode connected to the gate electrode of the first transistor. The first capacitor includes a first electrode connected to the gate electrode of the third transistor and a second electrode receiving the power voltage.
1. A pixel comprising:
an organic light emitting diode;
a first active pattern;
a first-first gate pattern that overlaps a first portion of the first active pattern to form a first transistor, wherein the first portion of the first active pattern includes a curved shape;
a first-second gate pattern that transmits a first scan signal and overlaps a second portion of the first active pattern and forms a second transistor;
a first-third gate pattern that transmits an emission control signal, overlaps a third portion of the first active pattern and forms a fifth transistor, and overlaps a fourth portion of the first active pattern and forms a sixth transistor;
a second-first gate pattern that transmits a first power voltage and overlaps the first-first gate pattern and forms a storage capacitor;
a second-second gate pattern that extends in a first direction and transmits an initialization voltage;
a second active pattern spaced apart from the first active pattern;
a third-first gate pattern that transmits a second scan signal and overlaps a first portion of the second active pattern and forms a third transistor;
a third-second gate pattern that transmits a third scan signal and overlaps a second portion of the second active pattern and forms a fourth transistor; and
a third-third gate pattern that transmits a fourth scan signal and overlaps a third portion of the second active pattern and forms a seventh transistor.
2. The pixel of claim 1 , wherein the first and second active patterns are spaced apart from an active pattern of a neighboring pixel that is adjacent to the pixel in a second direction that crosses the first direction.
3. The pixel of claim 1 ,
wherein the first active pattern is made of a first semiconductor material, and
wherein the second active pattern is made of a second semiconductor material that differs from the first semiconductor material.
4. The pixel of claim 3 , wherein the first semiconductor material comprises a polysilicon.
5. The pixel of claim 3 , wherein the second semiconductor material comprises an oxide semiconductor.
6. The pixel of claim 1 , wherein the second active pattern is electrically connected to the first-first gate pattern through a first connector.
7. The pixel of claim 6 , wherein the second active pattern is electrically connected to the first active pattern through a second connector ( 170 B).
8. The pixel of claim 7 , wherein the first connector and the second connector are made of a same material.
9. The pixel of claim 7 , wherein the second active pattern is further electrically connected to the first active pattern through a third connector.
10. The pixel of claim 7 , wherein the second active pattern is electrically connected to the second-second gate pattern through a third connector.