Semiconductor structures and methods of forming the same

1. A method for forming a semiconductor structure, comprising:

receiving a semiconductor substrate, wherein a first dielectric layer is formed over the semiconductor substrate;

forming a trench in the first dielectric layer;

filling the trench to form a conductive layer in the first dielectric layer;

segmenting the conductive layer to form a first conductive feature and a second conductive feature separated from each other by a recess; and

filling the recess with a second dielectric layer, such that one or both of the conductive features are end-capped by a portion of the first dielectric layer and a portion of the second dielectric layer.

2. The method of claim 1 , further comprising:

forming a third dielectric layer between the semiconductor substrate and the first dielectric layer; and

forming a connecting via in the third dielectric layer, wherein forming the first conductive feature and the second conductive feature results in the first conductive feature and the second conductive feature to be electrically coupled to the semiconductor substrate through the connecting via.

3. The method of claim 1 , wherein the first dielectric layer and the second dielectric layer have the same composition.

4. The method of claim 1 , wherein the first dielectric layer and the second dielectric layer have different compositions.

5. The method of claim 1 , wherein filling the trench results in the conductive layer to have a first inverted trapezoidal shape, and wherein filling the recess results in the second dielectric layer to have a second inverted trapezoidal shape.

6. The method of claim 1 , further comprising:

forming a gate structure over the semiconductor substrate; and

depositing the first dielectric layer over the gate structure.

7. The method of claim 6 , further comprising:

depositing an etch stop layer over the gate structure prior to depositing the first dielectric layer.

8. The method of claim 1 , wherein the filling the trench to form the conductive layer includes:

depositing a barrier layer; and

depositing a conductive material over the barrier layer.

9. A method for forming a semiconductor structure, comprising:

forming a semiconductor device over the semiconductor structure;

conformally depositing a first dielectric layer;

etching a trench in the first dielectric layer, wherein the trench has a first length and a first width;

filling the trench to form a conductive layer in the first dielectric layer, wherein the conductive layer has the first length and the first width;

etching the conductive layer to form a recess at a first portion along the first length; and

filling the recess with a second dielectric layer.

10. The method of claim 9 , wherein the etching the recess forms the recess having tapered sidewalls, the recess having a first width at a top surface of the conductive layer and a second width at a bottom surface of the conductive layer, the second width less than the first width.

11. The method of claim 9 , wherein the etching the trench forms the trench having tapered sidewalls, the recess having a first width at a top surface of the first dielectric layer and a second width at a bottom surface of the first dielectric layer, the second width less than the first width.

12. The method of claim 9 , wherein the recess has the first width.

13. The method of claim 9 , wherein the first dielectric layer comprising a same composition as the second dielectric layer.

14. The method of claim 9 , wherein the first dielectric layer comprises a different composition than the second dielectric layer.

15. A method, comprising:

forming a dielectric layer over a semiconductor substrate;

etching a first trench in the dielectric layer, wherein etching the first trench provides a recess having a first tapered sidewall, wherein the first tapered sidewall extends from an upper point to a lower point in a first direction;

filling the first trench with metallization to form a metallization line, wherein the metallization line abuts the first tapered sidewall;

etching a second trench in the metallization line, wherein etching the second trench provides a second tapered sidewall, wherein the second tapered sidewall extends from an upper point to a lower point in the first direction, wherein a contiguous portion of the metallization line extends from the first tapered sidewall to the second tapered sidewall; and

filling the second trench with another dielectric material.

16. The method of claim 15 , wherein filling the first trench with metallization includes depositing barrier layer and a conductive material over the barrier layer.

17. The method of claim 16 , wherein the barrier layer is formed on the first tapered sidewall but omitted from the second tapered sidewall.

18. The method of claim 15 , further comprising:

forming etch stop layer under the dielectric layer.

19. The method of claim 18 , wherein the etching the first trench exposes a surface of the etch stop layer.

20. The method of claim 19 , wherein etching the second trench in the metallization line exposes a portion of the surface of the etch stop layer.