Electromagnetic shielding structure for a semiconductor device and a method for manufacturing the same

1. A method, comprising:

forming a first recess and a second recess in a dielectric layer above a substrate, wherein a portion of the dielectric layer remains between the first recess and the second recess;

forming an inductance structure in the first recess; and

forming a first shielding structure comprising a first shielding structure portion having a first width, and a second shielding structure portion having a second width different from the first width, wherein at least one of the first shielding structure portion or the second shielding structure portion is formed in the second recess.

2. The method of claim 1 , further comprising forming a second shielding structure above a first surface of the inductance structure.

3. The method of claim 2 , further comprising forming a third horizontal shielding structure above a second surface of the inductance structure.

4. The method of claim 1 , further comprising forming a connective structure above the first shielding structure, the connective structure providing an electrical connection to the first shielding structure.

5. The method of claim 1 , wherein the inductance structure is a first inductance structure, and wherein the method further comprises:

forming a second inductance structure on the substrate,

wherein the first shielding structure is at least partially around a perimeter of the second inductance structure.

6. The method of claim 1 , further comprising affixing a semiconductor device including the inductance structure and the first shielding structure to another semiconductor device such that the inductance structure is electrically connected to the other semiconductor device.

7. The method of claim 1 , where the first shielding structure is formed around the inductance structure.

8. The method of claim 1 , wherein forming the first shielding structure comprises:

filling the second recess with a conductive material to form the first shielding structure.

9. The method of claim 1 , wherein the first shielding structure is formed after forming the inductance structure.

10. A method, comprising:

forming a first recess and a second recess in a dielectric layer above a substrate;

forming an inductance structure in the first recess; and

forming a shielding structure comprising:

a first shielding structure portion having a first width arranged along a side of the inductance structure and at least partially within the substrate, and

a second shielding structure portion having a second width different from the first width comprising openings through which a connective structure is arranged,

wherein at least one of the first shielding structure portion or the second shielding structure portion is formed in the second recess.

11. The method of claim 10 , wherein the shielding structure is formed around an entire perimeter of the inductance structure.

12. The method of claim 10 , wherein the shielding structure comprises a third shielding structure portion arranged above the inductance structure.

13. The method of claim 10 , wherein the shielding structure comprises a third shielding structure portion below the inductance structure and in the substrate.

14. The method of claim 10 , wherein the shielding structure is connected to a ground to dissipate an electric charge on the shielding structure.

15. The method of claim 10 , wherein forming the shielding structure comprises:

filling the second recess with a conductive material to form the shielding structure.

16. A method, comprising:

forming a first recess and a second recess in a dielectric layer on a substrate;

forming an inductance structure in the first recess; and

forming a shielding structure, to at least partially shield the inductance structure from external electromagnetic (EM) fields, comprising a first shielding structure portion having a first width, and a second shielding structure portion having a second width different from the first width,

wherein at least one of the inductance structure and the shielding structure is at least partially within a substrate, and

wherein at least one of the first shielding structure portion or the second shielding structure portion is formed in the second recess.

17. The method of claim 16 , wherein the shielding structure is formed around an entire perimeter of the inductance structure.

18. The method of claim 16 , wherein the shielding structure comprises a third shielding structure portion arranged above the inductance structure.

19. The method of claim 16 , wherein the first shielding structure portion is below the inductance structure.

20. The method of claim 16 , wherein the shielding structure is connected to a ground to dissipate an electric charge on the shielding structure.