Display substrate, manufacturing method therefor, and display device including same
A display substrate may include a substrate and a wiring on the substrate. The wiring may include a metal oxide layer including at least one oxide selected from tantalum (Ta), niobium (Nb), and titanium (Ti), and a metal layer on the metal oxide layer and including copper (Cu), and a thickness of the metal oxide layer may be in a range of about 30 angstroms (Å) to about 50 Å.
1. A display substrate comprising:
a substrate;
a gate insulating layer on the substrate, the gate insulating layer comprising at least one selected from silicon oxide, silicon nitride, and silicon oxynitride; and
a wiring on the gate insulating layer,
wherein the wiring comprises a metal oxide layer comprising at least one oxide selected from tantalum (Ta), niobium (Nb), and titanium (Ti), a metal layer on the metal oxide layer and comprising copper (Cu), and an intermetallic compound layer between the metal oxide layer and the metal layer, the intermetallic compound layer comprises an intermetallic compound comprising copper, and at least one selected from tantalum, niobium, or titanium, and
a thickness of the metal oxide layer is in a range of 30 angstroms (Å) to 50 Å.
2. The display substrate of claim 1 , wherein a thickness of the intermetallic compound layer is less than or equal to 30 Å.
3. The display substrate of claim 1 , wherein a side surface of the metal oxide layer, a side surface of the intermetallic compound layer, and a side surface of the metal layer are continuously formed.
4. The display substrate of claim 1 , wherein a thickness of the metal layer is in a range of 500 Å to 5000 Å.
5. The display substrate of claim 1 , wherein the substrate comprises silicon oxide (SiO x ).
6. A method for manufacturing a display substrate, the method comprising:
forming a gate insulating layer on a substrate, the gate insulating layer comprising at least one selected from silicon oxide, silicon nitride, and silicon oxynitride;
sequentially stacking a first metal layer comprising at least one selected from tantalum (Ta), niobium (Nb), and titanium (Ti) and a second metal layer comprising copper (Cu) on the gate insulating layer;
forming a wiring by partially etching the first metal layer and the second metal layer; and
converting the first metal layer into a metal oxide layer by oxidation.
7. The method of claim 6 , wherein the first metal layer is converted into the metal oxide layer by natural oxidation.
8. The method of claim 6 , wherein a thickness of the metal oxide layer is in a range of 30 angstroms (Å) to 50 Å.
9. The method of claim 6 , wherein the first metal layer is entirely converted into the metal oxide layer by the oxidation.
10. The method of claim 6 , wherein the first metal layer is partially converted into the metal oxide layer by the oxidation.
11. The method of claim 10 , further comprising converting a remaining part of the first metal layer, which is not oxidized, into an intermetallic compound layer by allowing the remaining part of the first metal layer to react with the second metal layer.
12. The method of claim 11 , wherein a thickness of the intermetallic compound layer is less than or equal to 30 Å.
13. The method of claim 11 , wherein the converting of the remaining part of the first metal layer, which is not oxidized, into the intermetallic compound layer is performed after the first metal layer is partially converted into the metal oxide layer by the oxidation.
14. A display device comprising:
a substrate;
a gate insulating layer on the substrate, the gate insulating layer comprising at least one selected from silicon oxide, silicon nitride, and silicon oxynitride;
a gate wire on the gate insulating layer;
a thin film transistor comprising an active pattern, and a gate electrode overlapping the active pattern and protruding from the gate wire; and
a light emitting element coupled to the thin film transistor,
wherein the gate wire comprises a metal oxide layer comprising at least one oxide selected from tantalum (Ta), niobium (Nb), and titanium (Ti), and a metal layer on the metal oxide layer and comprising copper (Cu), and an intermetallic compound layer between the metal oxide layer and the metal layer, the intermetallic compound layer comprises an intermetallic compound comprising copper, and at least one selected from tantalum, niobium, or titanium, and
a thickness of the metal oxide layer is in a range of 30 angstroms (Å) to 50 Å.