A solid-state imaging device includes: a p-type semiconductor substrate; an n-type first semiconductor layer located above the semiconductor substrate and forming a junction with the semiconductor substrate in the first area; and an n-type second semiconductor layer located between the semiconductor substrate and the first semiconductor layer in the second area outward of the first area and having an impurity concentration lower than an impurity concentration of the first semiconductor layer. The semiconductor substrate and the first semiconductor layer form APD1, and the second semiconductor layer extends to a level below an interface between the semiconductor substrate and the first semiconductor layer in a thickness direction of the semiconductor substrate.
1. A photodetector, comprising:
a semiconductor substrate of a first conductivity type;
a first semiconductor layer of a second conductivity type that is located above the semiconductor substrate and forms a junction with the semiconductor substrate in a first area, the second conductivity type being different from the first conductivity type; and
a second semiconductor layer of the second conductivity type that is located above the semiconductor substrate in a second area outward of the first area, the second semiconductor layer having an impurity concentration lower than an impurity concentration of the first semiconductor layer, wherein
the semiconductor substrate includes a first junction portion,
the first semiconductor layer includes a second junction portion having a higher impurity concentration than a remaining portion of the first semiconductor layer, the second junction portion being joined to the first junction portion,
the second semiconductor layer extends to a level below an interface between the first junction portion-and the second junction portion-in a thickness direction of the semiconductor substrate, and
the second semiconductor layer is in contact with both the first junction portion and the second junction portion.
2. The photodetector according to claim 1 , wherein
the semiconductor substrate includes: a third portion; and a fourth portion that is located on the third portion and in contact with the first semiconductor layer, and
an impurity concentration of the fourth portion is higher than an impurity concentration of the third portion.
3. The photodetector according to claim 1 , wherein
the semiconductor substrate includes: a third portion; and a fourth portion that is located outward of the second semiconductor layer on the third portion in a plan view.
4. The photodetector according to claim 3 , wherein
the semiconductor substrate further includes a fifth portion that is located outward of the fourth portion on the third portion in a plan view, and
an impurity concentration of the fifth portion is higher than an impurity concentration of the fourth portion.
5. The photodetector according to claim 1 , wherein
the first semiconductor layer is separated into an outer portion located in the second area and an inner portion located in the first area, and
an isolation region of the first conductivity type for electrically isolating the outer portion and the inner portion is not provided between the outer portion and the inner portion.
6. The photodetector according to claim 1 , further comprising:
a shallow trench isolation (STI) that covers a portion outward of the first semiconductor layer in a top surface of the semiconductor substrate.
7. The photodetector according to claim 6 , wherein
in a plan view, the STI is a rectangular ring.
8. The photodetector according to claim 1 , wherein
the photoelectric converter comprises a plurality of photoelectric converters arranged in an array.
9. A photodetector, comprising:
a semiconductor substrate of a first conductivity type;
a first semiconductor layer of a second conductivity type that is located above the semiconductor substrate and forms a junction with the semiconductor substrate in a first area, the second conductivity type being different from the first conductivity type; and
a second semiconductor layer of the second conductivity type that is located above the semiconductor substrate in a second area outward of the first area, the second semiconductor layer having an impurity concentration lower than an impurity concentration of the first semiconductor layer, wherein
the semiconductor substrate and the first semiconductor layer form a photoelectric converter including a charge multiplication region in which charges are multiplied by avalanche multiplication,
the second semiconductor layer extends to a level below an interface between semiconductor substrate and the first semiconductor layer in a thickness direction of the semiconductor substrate, and
further comprising:
a well that is located above the semiconductor substrate, in a third area inward of the first area; and
an isolation region of the first conductivity type that is located between the well and the first semiconductor layer.
10. The photodetector according to claim 9 , wherein
the well includes: a first well of the first conductivity type; and a second well of the second conductivity type that covers a lateral surface and a bottom surface of the first well, and
a transistor is disposed on a top surface of the well.
11. The photodetector according to claim 9 , wherein
the well extends to a level below the first semiconductor layer in the thickness direction of the semiconductor substrate.
12. A photodetector, comprising:
a semiconductor substrate of a first conductivity type;
a first semiconductor layer of a second conductivity type that is located above the semiconductor substrate and forms a junction with the semiconductor substrate in a first area, the second conductivity type being different from the first conductivity type; and
a second semiconductor layer of the second conductivity type that is located above the semiconductor substrate in a second area outward of the first area, the second semiconductor layer having an impurity concentration lower than an impurity concentration of the first semiconductor layer, wherein
the semiconductor substrate and the first semiconductor layer form a photoelectric converter including a charge multiplication region in which charges are multiplied by avalanche multiplication,
the second semiconductor layer extends to a level below an interface between semiconductor substrate and the first semiconductor layer in a thickness direction of the semiconductor substrate,
the first semiconductor layer is separated into an outer portion located in the second area and an inner portion located in the first area,
an isolation region of the first conductivity type for electrically isolating the outer portion and the inner portion is not provided between the outer portion and the inner portion, and wherein
the outer portion and the inner portion are electrically connected by a wire.
13. A photodetector, comprising:
a semiconductor substrate of a first conductivity type;
a first semiconductor layer of a second conductivity type that is located above the semiconductor substrate and forms a junction with the semiconductor substrate in a first area, the second conductivity type being different from the first conductivity type;
a second semiconductor layer of the second conductivity type that is located above the semiconductor substrate in a second area outward of the first area and has an impurity concentration lower than an impurity concentration of the first semiconductor layer;
a photoelectric converter that is located in a third area inward of the first area and includes a charge multiplication region in which charges are multiplied by avalanche multiplication; and
an isolation region of the first conductivity type that is located between the first area and the third area.
14. The photodetector according to claim 13 , wherein
in a plan view, the photoelectric converter is surrounded by the isolation region.