Semiconductor structure and method for preparing seminconductor structure

1. A method for preparing a semiconductor structure, the semiconductor structure comprising a conductive structure, the method for preparing the conductive structure comprising the following operations:

forming a semiconductor conductive layer;

forming a nitrile or isonitrile transition layer on the semiconductor conductive layer; and

forming a metal conductive layer on the nitrile or isonitrile transition layer.

2. The method for preparing the semiconductor structure according to claim 1 , wherein the method, after forming the metal conductive layer on the nitrile or isonitrile transition layer, further comprises:

forming a passivation layer on the metal conductive layer.

3. The method for preparing the semiconductor structure according to claim 2 , wherein the semiconductor conductive layer is formed on a semiconductor substrate, and the method, after forming the passivation layer on the metal conductive layer, further comprises:

patterning the passivation layer, the metal conductive layer, the nitrile or isonitrile transition layer and the semiconductor conductive layer to form a plurality of bit line structures discretely arranged on the semiconductor substrate.

4. The method for preparing the semiconductor structure according to claim 3 , wherein the method further comprises:

forming a protective layer on a sidewall of each bit line structure.

5. The method for preparing the semiconductor structure according to claim 1 , wherein forming the semiconductor conductive layer comprises:

providing a semiconductor base provided with a plurality of capacitor contact holes; and

forming the semiconductor conductive layer in each capacitor contact hole.

6. The method for preparing the semiconductor structure according to claim 1 , wherein forming the nitrile or isonitrile transition layer on the semiconductor conductive layer comprises:

treating a surface of the semiconductor conductive layer with a nitrile or isonitrile organic solution to form the nitrile or isonitrile transition layer.

7. The method for preparing the semiconductor structure according to claim 2 , wherein forming the nitrile or isonitrile transition layer on the semiconductor conductive layer comprises:

treating a surface of the semiconductor conductive layer with a nitrile or isonitrile organic solution to form the nitrile or isonitrile transition layer.

8. The method for preparing the semiconductor structure according to claim 3 , wherein forming the nitrile or isonitrile transition layer on the semiconductor conductive layer comprises:

treating a surface of the semiconductor conductive layer with a nitrile or isonitrile organic solution to form the nitrile or isonitrile transition layer.

9. The method for preparing the semiconductor structure according to claim 4 , wherein forming the nitrile or isonitrile transition layer on the semiconductor conductive layer comprises:

treating a surface of the semiconductor conductive layer with a nitrile or isonitrile organic solution to form the nitrile or isonitrile transition layer.

10. The method for preparing the semiconductor structure according to claim 5 , wherein forming the nitrile or isonitrile transition layer on the semiconductor conductive layer comprises:

treating a surface of the semiconductor conductive layer with a nitrile or isonitrile organic solution to form the nitrile or isonitrile transition layer.

11. The method for preparing the semiconductor structure according to claim 6 , wherein a concentration of nitrile or isonitrile in the nitrile or isonitrile organic solution is 5%-10%.

12. The method for preparing the semiconductor structure according to claim 6 , wherein the method, after forming the nitrile or isonitrile transition layer on the semiconductor conductive layer, further comprises a rinsing operation.

13. The method for preparing the semiconductor structure according to claim 1 , wherein the semiconductor conductive layer is a polysilicon layer, and the metal conductive layer comprises a Ti and TiN composite layer and a metal tungsten layer which are sequentially formed.

14. The method for preparing the semiconductor structure according to claim 2 , wherein the semiconductor conductive layer is a polysilicon layer, and the metal conductive layer comprises a Ti and TiN composite layer and a metal tungsten layer which are sequentially formed.

15. The method for preparing the semiconductor structure according to claim 13 , wherein the method, after forming the Ti and TiN composite layer and before forming the metal tungsten layer, further comprises a rapid thermal processing operation.

16. A semiconductor structure prepared with the method of claim 1 , comprising the conductive structure comprising the semiconductor conductive layer, the nitrile or isonitrile transition layer and the metal conductive layer which are sequentially stacked on one another.

17. The semiconductor structure according to claim 16 , wherein the semiconductor structure further comprises a semiconductor base, the semiconductor base comprises a semiconductor substrate and a plurality of bit line structures discretely arranged on the semiconductor substrate, a plurality of isolation structures are arranged along a direction perpendicular to the bit line structures, and the isolation structures and the bit line structures form a plurality of capacitor contact holes.

18. The semiconductor structure according to claim 17 , wherein each bit line structure comprises the conductive structure and a passivation layer covering the conductive structure.

19. The semiconductor structure according to claim 17 , wherein a protective layer is formed on a sidewall of each bit line structure.

20. The semiconductor structure according to claim 17 , wherein the conductive structure is provided in each of the capacitor contact holes.