Method of manufacturing semiconductor device, substrate processing apparatus, method of processing substrate, and recording medium
There are included (a) supplying a gas containing an organic ligand to a substrate; (b) supplying a metal-containing gas to the substrate; and (c) supplying a first reducing gas to the substrate, wherein after (a), a metal-containing film is formed on the substrate by performing (b) and (c) one or more times, respectively.
1. A method of processing a substrate, comprising:
(a) supplying a gas containing an organic ligand to a substrate;
(b) supplying a metal-containing gas to the substrate;
(c) supplying a first reducing gas to the substrate; and
(d) before (a), supplying a second reducing gas, which is different from the first reducing gas, to the substrate,
wherein after (a) and (d), a metal-containing film is formed on the substrate by performing (b) and (c) two or more times, respectively.
2. The method of claim 1 , wherein the organic ligand contains a hydrocarbon group.
3. The method of claim 1 , wherein the organic ligand contains an alkyl group.
4. The method of claim 3 , wherein the alkyl group includes at least one selected from the group of an ethyl group, a propyl group, a butyl group, an isopropyl group, and an isobutyl group.
5. The method of claim 1 , wherein the organic ligand contains an amine group.
6. The method of claim 1 , wherein the gas containing the organic ligand contains a metal element.
7. The method of claim 6 , wherein the metal element contained in the gas containing the organic ligand is different from a metal element contained in the metal-containing gas.
8. The method of claim 6 , wherein the metal element contained in the gas containing the organic ligand is a non-transition metal element.
9. The method of claim 1 , wherein a purge gas is not supplied between (a) and (b).
10. The method of claim 1 , further comprising: (e) after (a), supplying the second reducing gas to the substrate.
11. The method of claim 1 , further comprising:
(g) after (a), supplying the second reducing gas to the substrate,
wherein (a) and (g) are performed multiple times.
12. The method of claim 1 , wherein in (a), the gas containing the organic ligand is supplied to the substrate in a time-division manner.
13. The method of claim 1 , wherein in (b), the metal-containing gas is supplied to the substrate on which the organic ligand is exposed.
14. The method of claim 1 , wherein (a), (b) and (c) are performed multiple times.
15. A method of manufacturing a semiconductor device comprising the method of claim 1 .
16. A substrate processing apparatus comprising:
a process container in which a substrate is accommodated;
a gas supply system configured to supply a metal-containing gas, a first reducing gas, and a gas containing an organic ligand into the process container; and
a controller configured to be capable of controlling the gas supply system so as to perform a process including:
(a) supplying the gas containing the organic ligand to the substrate;
(b) supplying the metal-containing gas to the substrate;
(c) supplying the first reducing gas to the substrate; and
(d) before (a), supplying a second reducing gas, which is different from the first reducing gas, to the substrate,
wherein after (a) and (d), a metal-containing film is formed on the substrate by performing (b) and (c) two or more times, respectively.
17. A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform a process comprising:
(a) supplying a gas containing an organic ligand to a substrate;
(b) supplying a metal-containing gas to the substrate;
(c) supplying a first reducing gas to the substrate; and
(d) before (a), supplying a second reducing gas, which is different from the first reducing gas, to the substrate,
wherein after (a) and (d), a metal-containing film is formed on the substrate by performing (b) and (c) two or more times, respectively.