Solid-state imaging device and distance measurement device
A distance measurement accuracy is improved. A solid-state imaging device according to an embodiment includes a pixel array part in which a plurality of pixels is arranged in a matrix, in which each of the pixels includes a plurality of photoelectric conversion units that each photoelectrically converts incident light to generate a charge, a floating diffusion region that accumulates the charge, a plurality of transfer circuits that transfer the charge generated in each of the plurality of photoelectric conversion units to the floating diffusion region, and a first transistor that causes a pixel signal of a voltage value corresponding to a charge amount of the charge accumulated in the floating diffusion region to appear in a signal line.
1. A solid-state imaging device, comprising:
a pixel array part in which a plurality of pixels is arranged in a matrix,
wherein each of the pixels includes:
a plurality of photoelectric conversion units that each photoelectrically converts incident light to generate charges,
a floating diffusion region that accumulates charges,
a plurality of transfer circuits that transfer charges generated in each of the plurality of photoelectric conversion units to the floating diffusion region, and
a first transistor that causes a pixel signal of a voltage value corresponding to a charge amount of the charges accumulated in the floating diffusion region to appear in a signal line, wherein each of the plurality of pixels is arranged in a pixel region individually allocated on a first surface of a semiconductor substrate,
wherein the plurality of transfer circuits includes:
a plurality of first transfer circuits arranged point-symmetrically or line-symmetrically with respect to a center of the pixel region or a straight line passing through the center as an axis, and
a plurality of second transfer circuits arranged point-symmetrically or line-symmetrically with respect to the center or the straight line as an axis, wherein each of the photoelectric conversion units is provided on a one-to-one basis for a combination of a first transfer circuit and a second transfer circuit arranged in a predetermined direction in the matrix arrangement; and
a drive unit configured to drive transfer of the charge by the plurality of transfer circuits, wherein the drive unit drives the first and second transfer circuits such that transfer of the charge via the first transfer circuit is different in timing from transfer of the charge via the second transfer circuit, wherein the drive unit inputs a first drive pulse having a first phase angle with respect to a pulse of a predetermined cycle and the predetermined cycle to the first transfer circuit, and inputs a second drive pulse whose phase is shifted by 180 degrees with respect to the first drive pulse to the second transfer circuit, and wherein the drive unit drives the plurality of first transfer circuits at a same phase and drives the plurality of second transfer circuits at the same phase.
2. The solid-state imaging device according to claim 1 , wherein each of the transfer circuits includes a second transistor having a vertical structure that reaches the photoelectric conversion unit arranged in the semiconductor substrate from the first surface of the semiconductor substrate.
3. The solid-state imaging device according to claim 1 , wherein the plurality of first transfer circuits and the plurality of second transfer circuits are arranged point-symmetrically or line-symmetrically with respect to the center or the straight line as an axis.
4. The solid-state imaging device according to claim 1 , wherein
the plurality of transfer circuits further includes a plurality of third transfer circuits and a plurality of fourth transfer circuits, and
the drive unit
inputs a third drive pulse whose phase is shifted by 90 degrees with respect to the first drive pulse to each of the plurality of third transfer circuits and drives the third drive pulse in the same phase, and
inputs a fourth drive pulse whose phase is shifted by 180 degrees with respect to the third drive pulse to each of the plurality of fourth transfer circuits and drives the fourth drive pulse in the same phase.
5. The solid-state imaging device according to claim 4 , wherein
the first drive pulse has the first phase angle of 0 degrees with respect to the pulse of the predetermined cycle,
the second drive pulse has a second phase angle of 180 degrees with respect to the pulse of the predetermined cycle,
the third drive pulse has a third phase angle of 90 degrees with respect to the pulse of the predetermined cycle, and
the fourth drive pulse has a fourth phase angle of 270 degrees with respect to the pulse of the predetermined cycle.
6. The solid-state imaging device according to claim 4 , wherein the plurality of first transfer circuits, the plurality of second transfer circuits, the plurality of third transfer circuits, and the plurality of fourth transfer circuits are arranged point-symmetrically or line-symmetrically with respect to the center or the straight line as an axis.
7. The solid-state imaging device according to claim 4 , wherein each of the transfer circuits includes a memory that holds the charge generated in the photoelectric conversion unit, and
the drive unit;
inputs a first drive pulse having a phase angle of 0 degrees with respect to the pulse of the predetermined cycle and the predetermined cycle to the plurality of first transfer circuits to accumulate the charge in the memory of each of the plurality of first transfer circuits;
inputs a second drive pulse having a phase angle of 180 degrees with respect to the pulse of the predetermined cycle and the predetermined cycle to the plurality of second transfer circuits to accumulate the charge in the memory of each of the plurality of second transfer circuits;
inputs a third drive pulse having a phase angle of 90 degrees with respect to the pulse of the predetermined cycle and the predetermined cycle to the plurality of third transfer circuits to accumulate the charge in the memory of each of the plurality of third transfer circuits; and
inputs a fourth drive pulse having a phase angle of 270 degrees with respect to the pulse of the predetermined cycle and the predetermined cycle to the plurality of fourth transfer circuits to accumulate the charge in the memory of each of the plurality of fourth transfer circuits.
8. The solid-state imaging device according to claim 4 , further comprising a signal processing unit that generates distance information on a basis of a ratio between a difference between the charge transferred via the first transfer circuit and the charge transferred via the second transfer circuit and a difference between the charge transferred via the third transfer circuit and the charge transferred via the fourth transfer circuit.
9. The solid-state imaging device according to claim 1 , further comprising a pixel separation portion that is provided along a boundary portion of the pixel region and optically separates the adjacent pixels from each other.
10. The solid-state imaging device according to claim 9 , further comprising an element separation portion that is provided at least partially between the plurality of photoelectric conversion elements-units in the pixel region and optically separates adjacent photoelectric conversion elements-units from each other.
11. The solid-state imaging device according to claim 1 , wherein a periodic uneven structure is provided on a light receiving surface of each of the photoelectric conversion units.
12. A solid-state imaging device, comprising:
a pixel array part in which a plurality of pixels is arranged in a matrix,
wherein each of the pixels includes:
a plurality of photoelectric conversion units that each photoelectrically converts incident light to generate charges,
a floating diffusion region that accumulates charges,
a plurality of transfer circuits that transfer charges generated in each of the plurality of photoelectric conversion units to the floating diffusion region, and
a first transistor that causes a pixel signal of a voltage value corresponding to a charge amount of the charges accumulated in the floating diffusion region to appear in a signal line, wherein each of the plurality of pixels is arranged in a pixel region individually allocated on a first surface of a semiconductor substrate,
wherein the plurality of transfer circuits includes:
a plurality of first transfer circuits arranged point-symmetrically or line-symmetrically with respect to a center of the pixel region or a straight line passing through the center as an axis, and
a plurality of second transfer circuits arranged point-symmetrically or line-symmetrically with respect to the center or the straight line as an axis, wherein each of the photoelectric conversion units is provided on a one-to-one basis for a combination of a first transfer circuit and a second transfer circuit arranged in a predetermined direction in the matrix arrangement; and
a drive unit configured to drive transfer of the charge by the plurality of transfer circuits, wherein the drive unit drives the first and second transfer circuits such that transfer of the charge via the first transfer circuit is different in timing from transfer of the charge via the second transfer circuit, wherein the drive unit inputs a first drive pulse having a first phase angle with respect to a pulse of a predetermined cycle and the predetermined cycle to the first transfer circuit, and inputs a second drive pulse whose phase is shifted by 180 degrees with respect to the first drive pulse to the second transfer circuit, wherein the drive unit divides the charge generated in each of the photoelectric conversion units into a plurality of accumulation periods and transfers the divided charge to the floating diffusion region, and wherein the drive unit inverts a phase of each of the first and second drive pulses for each of the accumulation periods.
13. The solid-state imaging device according to claim 12 , wherein
each of the pixels further includes a third transistor that discharges the charge generated in the photoelectric conversion unit,
the drive unit sets a non-accumulation period in which the charge generated in each of the photoelectric conversion units is not transferred to the floating diffusion region during the accumulation period, and
the drive unit discharges the charge generated in the photoelectric conversion unit via the third transistor during the non-accumulation period.
14. The solid-state imaging device according to claim 12 , further comprising a pixel separation portion that is provided along a boundary portion of the pixel region and optically separates adjacent pixels from each other.
15. The solid-state imaging device according to claim 14 , further comprising an element separation portion that is provided at least partially between the plurality of photoelectric conversion units in the pixel region and optically separates adjacent photoelectric conversion units from each other.
16. The solid-state imaging device according to claim 12 , wherein a periodic uneven structure is provided on a light receiving surface of each of the photoelectric conversion units.
17. A distance measurement device, comprising:
a light receiving unit including a pixel array part in which a plurality of pixels is arranged in a matrix; and
a light emitting unit that emits pulsed irradiation light of a predetermined cycle, wherein
each of the pixels includes:
a plurality of photoelectric conversion units that each photoelectrically converts incident light to generate charges;
a floating diffusion region that accumulates charges;
a plurality of transfer circuits that transfer charges generated in each of the plurality of photoelectric conversion units to the floating diffusion region, and
a first transistor that causes a pixel signal of a voltage value corresponding to a charge amount of the charges accumulated in the floating diffusion region to appear in a signal line, wherein each of the plurality of pixels is arranged in a pixel region individually allocated on a first surface of a semiconductor substrate,
wherein the plurality of transfer circuits includes:
a plurality of first transfer circuits arranged point-symmetrically or line-symmetrically with respect to a center of the pixel region or a straight line passing through the center as an axis, and
a plurality of second transfer circuits arranged point-symmetrically or line-symmetrically with respect to the center or the straight line as an axis, wherein each of the photoelectric conversion units is provided on a one-to-one basis for a combination of a first transfer circuit and a second transfer circuit arranged in a predetermined direction in the matrix arrangement; and
a drive unit configured to drive transfer of the charge by the plurality of transfer circuits, wherein the drive unit drives the first and second transfer circuits such that transfer of the charge via the first transfer circuit is different in timing from transfer of the charge via the second transfer circuit, wherein the drive unit inputs a first drive pulse having a first phase angle with respect to a pulse of a predetermined cycle and the predetermined cycle to the first transfer circuit, and inputs a second drive pulse whose phase is shifted by 180 degrees with respect to the first drive pulse to the second transfer circuit, and wherein the drive unit drives the plurality of first transfer circuits at a same phase and drives the plurality of second transfer circuits at the same phase.