Multi-port memory architecture
Various implementations described herein are directed to a device having memory circuitry having multi-port bitcells, wherein each bitcell of the multi-port bitcells has a read-write port and a read port. The device may have read-write circuitry coupled to the read-write port, wherein the read-write circuitry has write-drive logic and read-sense logic that provide for at least one write and at least one read in a single clock cycle.
1. A device comprising:
memory circuitry having multi-port bitcells, wherein each bitcell of the multi-port bitcells has a read-write port and a read port; and
read-write circuitry coupled to the read-write port, wherein the read-write circuitry comprises:
a column multiplexer coupled to the read-write port; and
write-drive logic and read-sense logic that provide for at least one write and at least one read in a single clock cycle, wherein the write-drive logic comprises a write driver coupled to the column multiplexer, and wherein the read-sense logic comprises a first sense amplifier coupled to the column multiplexer.
2. The device of claim 1 , wherein:
the write-drive logic further comprises an input latch coupled to the column multiplexer;
the read-sense logic further comprises a second sense amplifier coupled to the read port; or
combinations thereof.
3. The device of claim 1 , wherein:
the write-drive logic and the read-sense logic provide for multiple reads in the single clock cycle,
the read-write port has first port transistors that are configured to use the read-sense logic to perform a first read of the multiple reads in the single clock cycle, and
the read port has second port transistors that are configured to perform a second read of the multiple reads in the single clock cycle.
4. The device of claim 3 , wherein:
each bitcell of the multi-port bitcells has eight transistors (8T),
the first port transistors include six transistors (6T) for each bitcell, and
the second port transistors include two transistors (2T) for each bitcell.
5. The device of claim 1 , wherein:
the read-write port has first port transistors that are configured to use the write-drive logic to perform the at least one write in the single clock cycle, and
the read port has second port transistors that are configured to perform the at least one read in the single clock cycle.
6. The device of claim 5 , wherein:
each bitcell of the multi-port bitcells has eight transistors (8T),
the first port transistors include six transistors (6T) for each bitcell, and
the second port transistors include two transistors (2T) for each bitcell.
7. The device of claim 1 , wherein the memory circuitry is configured for use with a cache memory architecture in computing applications involving a central processing unit (CPU), and wherein the multi-port bitcells are static random access memory (SRAM) bitcells that are configured for dual-port memory applications.
8. A device comprising:
multi-bank memory architecture having multiple banks with each bank of the multiple banks having multi-port bitcells, wherein each bitcell of the multi-port bitcells has a read-write port and a read port; and
read-write circuitry coupled to the read-write port of each bitcell of the multi-port bitcells, wherein the read-write circuitry has write-drive logic and read-sense logic that provide for at least one write and three or more reads in a single clock cycle using the multiple banks.
9. The device of claim 8 , wherein the write-drive logic and the read-sense logic provide for multiple reads in the single clock cycle.
10. The device of claim 9 , wherein:
the read-write port has first port transistors that are configured to use the read-sense logic to perform first reads of the multiple reads in the single clock cycle, and
the read port has second port transistors that are configured to perform second reads of the multiple reads in the single clock cycle.
11. The device of claim 10 , wherein:
each bitcell of the multi-port bitcells has eight transistors (8T),
the first port transistors include six transistors (6T) for each bitcell, and
the second port transistors include two transistors (2T) for each bitcell.
12. The device of claim 8 , wherein:
the read-write port has first port transistors that are configured to use the write-drive logic to perform the at least one write in the single clock cycle, and
the read port has second port transistors that are configured to perform the three or more reads in the single clock cycle.
13. The device of claim 12 , wherein:
each bitcell of the multi-port bitcells has eight transistors (8T),
the first port transistors include six transistors (6T) for each bitcell, and
the second port transistors include two transistors (2T) for each bitcell.
14. The device of claim 8 , wherein the multi-bank memory architecture is configured for use for a cache memory architecture in computing applications involving a central processing unit (CPU), and wherein the multi-port bitcells are static random access memory (SRAM) bitcells that are configured for multi-port memory applications.
15. A device comprising:
multi-bank memory architecture having multiple banks with each bank of the multiple banks having multi-port bitcells, wherein each bitcell of the multi-port bitcells has a read-write port and a read port; and
read-write circuitry coupled to the read-write port of each bitcell, wherein the read-write circuitry comprises:
one or more column multiplexers coupled to the read-write port of each bitcell; and
write-drive logic and read-sense logic that provide for at least one read and at least one write in a single clock cycle for each bitcell, wherein the write-drive logic comprises one or more write drivers coupled to the one or more column multiplexers, and wherein the read-sense logic comprises one or more first sense amplifiers coupled to the one or more column multiplexers.
16. The device of claim 15 , wherein;
the write-drive logic further comprises one or more input latches coupled to the one or more column multiplexers;
the read-sense logic further comprises one or more second sense amplifiers coupled to the read port of each bitcell; or
combinations thereof.
17. The device of claim 15 , wherein:
the write-drive logic and the read-sense logic provide for multiple reads in the single clock cycle for each bitcell,
the read-write port for each bitcell has first port transistors that are configured to use the read-sense logic to perform a first read of the multiple reads in the single clock cycle, and
the read port for each bitcell has second port transistors that are configured to perform a second read of the multiple reads in the single clock cycle.
18. The device of claim 17 , wherein:
each bitcell of the multi-port bitcells has eight transistors (8T),
the first port transistors include six transistors (6T) for each bitcell, and
the second port transistors include two transistors (2T) for each bitcell.
19. The device of claim 15 , wherein:
the read-write port for each bitcell has first port transistors that are configured to use the write-drive logic to perform the at least one write in the single clock cycle, and
the read port for each bitcell has second port transistors that are configured to perform the at least one read in the single clock cycle.
20. The device of claim 19 , wherein:
each bitcell of the multi-port bitcells has eight transistors (8T),
the first port transistors include six transistors (6T) for each bitcell, and
the second port transistors include two transistors (2T) for each bitcell.