Beol tip-to-tip shorting and time dependent dielectric breakdown
A dielectric layer is located on top of and in contact with a substrate. A conductive line located within the dialectic layer. A barrier layer on top of an in contact with the dielectric layer. The barrier layer is below the conductive line. A liner layer on top of and in contact with the barrier layer and below and in contact with the conductive line. A metal liner on top of and in contact with the conductive line. A capping layer on top of and in contact with the dielectric layer, the barrier layer, the liner layer, and the metal liner.
1. A semiconductor structure comprising:
a dielectric layer on top of and in contact with a substrate; a conductive line located within the dielectric layer;
a barrier layer on top of and in contact with the dielectric layer, wherein the barrier layer is below a liner layer;
the liner layer on top of and in contact with the barrier layer and below and in contact with the conductive line;
a metal liner on top of and in contact with the conductive line, wherein a portion of the metal liner contacts a sidewall of the conductive line; and
a capping layer on top of and in contact with the dielectric layer, the barrier layer, the liner layer and the metal liner.
2. The semiconductor structure of claim 1 , wherein the dielectric layer has a dielectric constant of less than 4.0.
3. The semiconductor structure of claim 1 , wherein the capping layer has a thickness of 10 nm.
4. The semiconductor structure of claim 1 , wherein the capping layer consists of SiCN.
5. The semiconductor structure of claim 1 , wherein the conductive line has rounded corners.
6. The semiconductor structure of claim 1 , wherein the barrier layer and the liner layer have a reduced height relative to the conductive line.
7. The semiconductor structure of claim 1 , wherein the barrier layer and the liner layer have a same height.
8. The semiconductor structure of claim 1 , wherein the dielectric layer has a dielectric constant of less than 3.5.
9. The semiconductor structure of claim 1 , wherein the conductive line consists of Cu.