Sensing die encapsulated by an encapsulant with a roughness surface having a hollow region
A semiconductor device includes an encapsulant including a first hollow region, a sensing die in the first hollow region of the encapsulant, and a redistribution structure disposed on the encapsulant and the sensing die and electrically coupled to the sensing die. A top width of the hollow region is greater than a bottom width of the hollow region. The redistribution structure includes a second hollow region which exposes a sensing area of the sensing die, and the redistribution structure is slanted downward from an edge of the device toward the sensing area.
1. A device, comprising:
an encapsulant comprising a first hollow region, a top width of the first hollow region being greater than a bottom width of the first hollow region;
a sensing die in the first hollow region of the encapsulant, wherein a top surface of the encapsulant is rougher than a top surface of the sensing die; and
a redistribution structure disposed on the encapsulant and the sensing die and electrically coupled to the sensing die, the redistribution structure comprising a second hollow region which exposes a sensing area of the sensing die, and the redistribution structure being slanted downward from an edge of the device toward the sensing area.
2. The device of claim 1 , further comprising:
a through insulator via (TIV) laterally covered by the encapsulant; and
a conductive pattern laterally covered by the encapsulant and disposed below the TIV, wherein the conductive pattern is electrically coupled to the redistribution structure through the TIV.
3. The device of claim 1 , wherein the encapsulant comprises the top surface, an inner sidewall connected to the sidewalls of the sensing die, and a curved surface connected to the top surface of the encapsulant and the inner sidewall of the encapsulant, and the curved surface comprises a concave-down cross-sectional profile.
4. The device of claim 1 , further comprising:
a through insulator via (TIV) and a dummy TIV penetrating through the encapsulant, wherein the TIV is electrically coupled to the sensing die through the redistribution structure; and
the redistribution structure further comprises a dummy conductive pattern connected to the dummy TIV.
5. The device of claim 4 , wherein the TIV comprises a first surface connected to the redistribution structure and a second surface opposite to the first surface and electrically coupled to a conductive terminal.
6. The device of claim 1 , wherein the redistribution structure further comprises a dummy conductive pattern in direct contact with a patterned passivation layer of the sensing die.
7. The device of claim 1 , wherein the redistribution structure further comprises:
a first patterned dielectric layer overlying the encapsulant and extending into the first hollow region to be in contact with the sensing die.
8. The device of claim 7 , wherein the redistribution structure further comprises:
a second patterned dielectric layer overlying the first patterned dielectric layer, wherein an upper portion of the second hollow region laterally surrounded by the second patterned dielectric layer is larger than a lower portion of the second hollow region laterally surrounded by the first patterned dielectric layer.
9. The device of claim 1 , wherein the redistribution structure further comprises:
a seal-ring pattern located in proximity to the edge of the device.
10. A device, comprising:
an encapsulant comprising a top surface, an inner sidewall, and a curved surface connected to the top surface and the inner sidewall and sloped downward from the top surface to the inner sidewall;
a sensing die laterally adjoining the inner sidewall of the encapsulant;
a conductive pattern disposed on the encapsulant and the sensing die and electrically coupled to the sensing die, and the conductive pattern being slanted downward in a direction from an edge of the device toward the sensing die; and
a dummy conductive pattern laterally adjacent to the conductive pattern and slanted downward in the direction, the dummy conductive pattern being electrically floating.
11. The device of claim 10 , further comprising:
a dummy TIV penetrating through the encapsulant, wherein the dummy conductive pattern is directly disposed on the dummy TIV.
12. The device of claim 10 , wherein the dummy conductive pattern is on a passivation layer of the sensing die.
13. The device of claim 10 , wherein the top surface of the encapsulant is rougher than a top surface of the sensing die.
14. The device of claim 10 , further comprising:
a patterned dielectric layer conformally overlying the top surface and the curved surface of the encapsulant and cover at least a portion of a top surface of the sensing die, wherein at least a portion of the conductive pattern and at least a portion of the dummy conductive pattern are embedded in the patterned dielectric layer.
15. A device, comprising:
an encapsulant comprising a top surface and a rounded inner edge connected to the top surface;
a sensing die laterally covered by the encapsulant, a top surface of the sensing die being lower than the rounded inner edge of the encapsulant and being smoother than the top surface of the encapsulant; and
a redistribution structure disposed on the encapsulant and the sensing die and electrically coupled to the sensing die, the redistribution structure being slanted downward from an edge of the device toward the sensing die, and the redistribution structure at least exposing a sensing area of the sensing die.
16. The device of claim 15 , wherein the redistribution structure comprises:
a dummy conductive pattern landing on the top surface of the sensing die.
17. The device of claim 15 , wherein the redistribution structure comprises a dummy conductive pattern, and the device further comprises:
a dummy TIV penetrating through the encapsulant, wherein the dummy conductive pattern is connected to the dummy TIV.
18. The device of claim 15 , wherein the redistribution structure comprises:
a first patterned dielectric layer overlying the top surface and the rounded edge of the encapsulant; and
a conductive pattern penetrating through the first patterned dielectric layer to land on a contact pad of the sensing die.
19. The device of claim 18 , wherein the redistribution structure further comprises:
a second patterned dielectric layer overlying the first patterned dielectric layer, wherein an inner sidewall of the second patterned dielectric layer above the sensing die is laterally offset from an inner sidewall of the first patterned dielectric layer.
20. The device of claim 15 , further comprising:
a TIV penetrating through the encapsulant and electrically coupled to the sensing die through the redistribution structure, wherein a first surface of the TIV connected to the redistribution structure is narrower than a second surface of the TIV opposite to the first surface.