Vertical UMOSFET device with high channel mobility and preparation method thereof
The present application discloses a vertical UMOSFET device with a high channel mobility and a preparation method thereof. The vertical UMOSFET device with a high channel mobility includes an epitaxial structure, and a source, a drain and a gate which match the epitaxial structure, where the epitaxial structure includes a first semiconductor, and a second semiconductor and a third semiconductor which are sequentially disposed on the first semiconductor, a groove structure matching the gate is also disposed in the epitaxial structure, and the groove structure continuously extends into the first semiconductor from a first surface of the epitaxial structure; a fourth semiconductor is also disposed at least between an inner wall of the groove structure and the second semiconductor, and the fourth semiconductor is a high resistivity semiconductor.
1. A method for manufacturing a vertical UMOSFET device with a high channel mobility, comprising the steps of:
manufacturing an epitaxial structure comprising a substrate;
manufacturing a source, a drain and a gate which match the epitaxial structure, wherein the epitaxial structure comprises a first semiconductor, and a second semiconductor and a third semiconductor which are sequentially disposed on the first semiconductor; wherein the first semiconductor is grown on the substrate, wherein the second semiconductor is grown on the first semiconductor, and wherein the third semiconductor is grown on the second semiconductor, wherein a groove structure matching the gate is also disposed in the epitaxial structure, and the groove structure continuously extends into the first semiconductor from a first surface of the epitaxial structure; wherein the first surface of the epitaxial structure is a surface of the third semiconductor facing away from the second semiconductor wherein the manufacturing method also comprises the step of manufacturing a fourth semiconductor in the epitaxial structure; the fourth semiconductor is disposed at least between an inner wall of the groove structure and the second semiconductor, and the fourth semiconductor comprises any one of GaN and InGaN, wherein the step of manufacturing the groove structure is performed after the step of forming the fourth semiconductor,
by processing at least a region of the second semiconductor corresponding to the groove structure and the fourth semiconductor first to convert a composition material of the second semiconductor in the region into a material of the fourth semiconductor, and then processing the groove structure in the epitaxial structure.
2. The manufacturing method according to claim 1 , comprising: converting a composition material of the second semiconductor into a material of the fourth semiconductor by using at least an ion implantation treatment method, wherein implanted elements used in the ion implantation method comprise any one of F, N, Ar, H and O.
3. The manufacturing method according to claim 1 , wherein at least one of:
the fourth semiconductor is formed by converting a portion of the second semiconductor adjacent to the inner wall of the groove structure, and the fourth semiconductor surrounds the gate; and
the inner wall of the groove structure is smooth, and a side wall and a bottom wall form an angle of 90 degrees.
4. The manufacturing method according to claim 1 , further comprising: covering at least the inner wall of the groove structure with a continuous passivation layer, and then manufacturing a gate; wherein, the passivation layer comprises any one or a combination of two or more of Al 2 O 3 , SiO 2 , Si 3 N 4 , AlN, and HfO 2 .
5. The manufacturing method according to claim 1 , wherein at least one of:
the first semiconductor comprises an N − drift layer; and
the first semiconductor has a thickness of 1-100 μm; and
the third semiconductor comprises an N + source region layer; and
the second semiconductor comprises a P + channel layer; wherein the second semiconductor comprises a P-type wide bandgap semiconductor; wherein the P-type wide bandgap semiconductor comprises a P-type III-nitride; wherein the P-type III-nitride comprises any one of p-GaN and p-InGaN; and
the second semiconductor has a thickness of 200 nm to 100 μm; and
the third semiconductor is formed by converting at least a local region of a surface layer of the second semiconductor.
6. The manufacturing method according to claim 1 , wherein at least one of:
the source and the gate are disposed on the first surface of the epitaxial structure, the drain is connected to a second surface of the epitaxial structure, and the first surface and the second surface are faced away from each other; and
the epitaxial structure also comprises a groove matching the source, and the groove matching the source extends into the second semiconductor from the surface of the epitaxial structure such that the source is simultaneously electrically connected to at least the second semiconductor and the third semiconductor; and
the UMOSFET device comprises two or more sources; wherein the two or more sources are distributed on at least two sides of the gate; and
the UMOSFET device also comprises a substrate, and the drain is disposed on a surface of the other side of the substrate faced away from the surface of the side of the substrate; wherein the substrate comprises GaN; wherein the substrate is a lightly doped GaN substrate with a dislocation density less than 5×10 6 cm −3 and a surface roughness less than 0.2 nm; and
the substrate and the first semiconductor are integrated; and
the drain forms an ohmic contact with the surface of the other side of the substrate.
7. A method for manufacturing a vertical UMOSFET device with a high channel mobility, comprising the steps of:
manufacturing an epitaxial structure comprising a substrate;
manufacturing a source, a drain and a gate which match the epitaxial structure, wherein the epitaxial structure comprises a first semiconductor, and a second semiconductor and a third semiconductor which are sequentially disposed on the first semiconductor; wherein the first semiconductor is grown on the substrate, wherein the second semiconductor is grown on the first semiconductor, and wherein the third semiconductor is grown on the second semiconductor, wherein a groove structure matching the gate is also disposed in the epitaxial structure, and the groove structure continuously extends into the first semiconductor from a first surface of the epitaxial structure; wherein the first surface of the epitaxial structure is a surface of the third semiconductor facing away from the second semiconductor wherein the manufacturing method also comprises the step of manufacturing a fourth semiconductor in the epitaxial structure; the fourth semiconductor is disposed at least between an inner wall of the groove structure and the second semiconductor, and the fourth semiconductor comprises any one of GaN and InGaN, wherein the step of manufacturing the groove structure is performed before the step of forming the fourth semiconductor by processing the groove structure in the epitaxial structure first, and then processing a region of the second semiconductor corresponding to the fourth semiconductor to convert a composition material of the second semiconductor in the region into a material of the fourth semiconductor.
8. The manufacturing method according to claim 7 , comprising: converting a composition material of the second semiconductor into a material of the fourth semiconductor by using a passivation treatment method; wherein the passivation treatment method comprises a plasma surface passivation treatment method; wherein the passivation treatment method is implemented at a temperature of 300-800° C. and in NH 3 or H 2 atmosphere.
9. The manufacturing method according to claim 7 , wherein at least one of:
the fourth semiconductor is formed by converting a portion of the second semiconductor adjacent to the inner wall of the groove structure, and the fourth semiconductor surrounds the gate; and
the inner wall of the groove structure is smooth, and a side wall and a bottom wall form an angle of 90 degrees.
10. The manufacturing method according to claim 7 , further comprising: covering at least the inner wall of the groove structure with a continuous passivation layer, and then manufacturing a gate; wherein preferably, the passivation layer comprises any one or a combination of two or more of Al 2 O 3 , SiO 2 , Si 3 N 4 , AlN, and HfO 2 .
11. The manufacturing method according to claim 7 , wherein at least one of:
the first semiconductor comprises an N − drift layer; and
the first semiconductor has a thickness of 1-100 μm; and
the third semiconductor comprises an N + source region layer; and
the second semiconductor comprises a P + channel layer; wherein the second semiconductor comprises a P-type wide bandgap semiconductor; wherein the P-type wide bandgap semiconductor comprises a P-type III-nitride; wherein the P-type III-nitride comprises any one of p-GaN and p-InGaN; and
the second semiconductor has a thickness of 200 nm to 100 μm; and
the third semiconductor is formed by converting at least a local region of a surface layer of the second semiconductor.
12. The manufacturing method according to claim 7 , wherein at least one of:
the source and the gate are disposed on the first surface of the epitaxial structure, the drain is connected to a second surface of the epitaxial structure, and the first surface and the second surface are faced away from each other; and
the epitaxial structure also comprises a groove matching the source, and the groove matching the source extends into the second semiconductor from the surface of the epitaxial structure such that the source is simultaneously electrically connected to at least the second semiconductor and the third semiconductor; and
the UMOSFET device comprises two or more sources; wherein the two or more sources are distributed on at least two sides of the gate; and
the UMOSFET device also comprises a substrate, and the drain is disposed on a surface of the other side of the substrate faced away from the surface of the side of the substrate; wherein the substrate comprises GaN; wherein the substrate is a lightly doped GaN substrate with a dislocation density less than 5×10 6 cm −3 and a surface roughness less than 0.2 nm; and
the substrate and the first semiconductor are integrated; and
the drain forms an ohmic contact with the surface of the other side of the substrate.