Al bonding wire
There is provided an Al bonding wire which can provide a sufficient bonding reliability of bonded parts of the bonding wire under a high temperature state where a semiconductor device using the Al bonding wire is operated. The bonding wire is composed of Al or Al alloy, and is characterized in that an average crystal grain size in a cross-section of a core wire in a direction perpendicular to a wire axis of the bonding wire is 0.01 to 50 μm, and when measuring crystal orientations on the cross-section of the core wire in the direction perpendicular to the wire axis of the bonding wire, a crystal orientation <111> angled at 15 degrees or less to a wire longitudinal direction has a proportion of 30 to 90% among crystal orientations in the wire longitudinal direction.
1. A bonding wire of Al or Al alloy, wherein
an average crystal grain size in a cross-section in a direction perpendicular to a wire axis of the bonding wire is 0.01 to 50 μm,
a hardness of the wire is 20 to 40 in terms of Hv, and
when measuring crystal orientations on the cross-section in the direction perpendicular to the wire axis of the bonding wire, a crystal orientation <111>angled at 15 degrees or less to a wire longitudinal direction has a proportion of 30 to 90% among crystal orientations in the wire longitudinal direction.
2. The bonding wire according to claim 1 , wherein a wire diameter is 50 to 600 μm.