Techniques for command bus training to a memory device

1. An apparatus comprising:

a controller logic configured to generate a first command to trigger a memory device to enter one of a first command bus training mode or a second command bus training mode to train a command and address (CA) interface of the memory device; and

input/output (I/O) circuitry configured to:

cause a CA pattern to be output via a command bus coupled with the CA interface of the memory device; and

receive a sampled CA pattern from the memory device via a data bus coupled with a DQ interface of the memory device, compress the sampled CA pattern to generate a first compressed value based on the memory device being in the first command bus training mode and forward the first compressed value to the controller logic; or

receive a second compressed value from the memory device via the data bus, the second compressed value to represent the sampled CA pattern compressed at the memory device based on the memory device being in the second command bus training mode and forward the second compressed value to the controller logic.

2. The apparatus of claim 1 , further comprising:

the controller logic to use the first compressed value or the second compressed value to determine whether the CA pattern output via the command bus matches the sampled CA pattern; and

cause an adjustment to one or more electrical or timing parameters associated with the CA interface of the memory device if the CA pattern output via the command bus does not match the sampled CA pattern.

3. The apparatus of claim 1 , comprising:

the I/O circuitry configured to cause the CA pattern to be output via an even number of signal lines included in the command bus; and

the first compressed value or the second compressed value are an even parity value of 0 based on the CA pattern, output via the even number of signal lines, matching the sampled CA pattern.

4. The apparatus of claim 3 , comprising:

the second command bus training mode is a command address training mode (CATM); and

the memory device is a synchronous dynamic random access memory (SDRAM) device compatible with a double data rate standard, the SDRAM device to have circuitry to generate the even parity value of 0 from the sampled CA pattern and indicate the even parity value of 0 for the sampled CA pattern via the data bus to provide the second compressed value to the I/O circuitry.

5. The apparatus of claim 3 , comprising:

the first command bus training mode is a command bus training (CBT) mode;

the memory device is a synchronous dynamic random access memory (SDRAM) device compatible with a double data rate standard; and

the I/O circuitry, to generate the first compressed value, is configured to include one or more exclusive OR (XOR) gates to generate the even parity value of 0 from the sampled CA pattern received from the SDRAM device.

6. The apparatus of claim 1 , comprising:

the first command bus training mode is a command bus training (CBT) mode;

the memory device is a synchronous dynamic random access memory (SDRAM) device compatible with a double data rate standard;

the I/O circuitry configured to include circuitry to calculate a cyclic redundancy check (CRC) value from the sampled CA pattern received from the SDRAM device to generate the first compressed value and forward the CRC value to the controller logic; and

the controller logic configured to:

use the CRC value to determine whether the CA pattern output via the command bus matches the sampled CA pattern, and

cause an adjustment to one or more electrical or timing parameters associated with the CA interface of the memory device if the CA pattern is determined to not match the sample CA pattern.

7. The apparatus of claim 1 , comprising:

the first command bus training mode is a command bus training (CBT) mode;

the memory device is a synchronous dynamic random access memory (SDRAM) device compatible with a double data rate standard;

the I/O circuitry configured to include a multi-input shift register to generate a signature value from the sampled CA pattern received from the SDRAM device to generate the first compressed value and forward the signature value to the controller logic; and

the controller logic configured to:

use the signature value to determine whether the CA pattern output via the command bus matches the sampled CA pattern, and

cause an adjustment to one or more electrical or timing parameters associated with the CA interface of the memory device if the CA pattern is determined to not match the sample CA pattern.

8. The apparatus of claim 1 , the CA pattern to be output via the command bus comprises the CA pattern generated based on a same CA training algorithm that is capable of being implemented for the first command bus training mode and the second command bus training mode.

9. A system comprising:

a memory device configured to include a command and address (CA) interface and a DQ interface;

a command bus configured to couple with the CA interface;

a data bus configured to couple with the DQ interface; and

a memory controller configured to couple with the command bus and the data bus, the memory controller to include:

a controller logic configured to generate a first command to trigger the memory device to enter one of a first command bus training mode or a second command bus training mode to train the CA interface; and

input/output (I/O) circuitry configured to:

cause a CA pattern to be output via the command bus; and

receive a sampled CA pattern from the memory device via the data bus, compress the sampled CA pattern to generate a first compressed value based on the memory device being in the first command bus training mode and forward the first compressed value to the controller logic; or

forward a second compressed value received from the memory device via the data bus, the second compressed value to represent the sampled CA pattern compressed at the memory device based on the memory device being in the second command bus training mode.

10. The system of claim 9 , further comprising:

the controller logic to use the first compressed value or the second compressed value to determine whether the CA pattern output via the command bus matches the sampled CA pattern; and

cause an adjustment to one or more electrical or timing parameters associated with the CA interface of the memory device if the CA pattern output via the command bus does not match the sampled CA pattern.

11. The system of claim 9 , comprising:

the I/O circuitry configured to generate the CA pattern to be output via an even number of signal lines included in the command bus; and

the first compressed value or the second compressed value are an even parity value of 0 based on the CA pattern, output via the even number of signal lines, matching the sampled CA pattern.

12. The system of claim 11 , comprising:

the second command bus training mode is a command address training mode (CATM); and

the memory device is a synchronous dynamic random access memory (SDRAM) device compatible with a double data rate standard, the SDRAM device to have circuitry to generate the even parity value of 0 from the sampled CA pattern and indicate the even parity value of 0 for the sampled CA pattern via the data bus to provide the second compressed value to the I/O circuitry.

13. The system of claim 11 , comprising:

the first command bus training mode is a command bus training (CBT) mode;

the memory device is a synchronous dynamic random access memory (SDRAM) device compatible with a double data rate standard; and

the I/O circuitry, to generate the first compressed value, is configured to include one or more exclusive OR (XOR) gates to generate the even parity value of 0 from the sampled CA pattern received from the SDRAM device.

14. The system of claim 9 , comprising:

the first command bus training mode is a command bus training (CBT) mode;

the memory device is a synchronous dynamic random access memory (SDRAM) device compatible with a double data rate standard;

the I/O circuitry configured to include circuitry to calculate a cyclic redundancy check (CRC) value from the sampled CA pattern received from the SDRAM device to generate the first compressed value and forward the CRC value to the controller logic; and

the controller logic configured to:

use the CRC value to determine whether the CA pattern output via the command bus matches the sampled CA pattern, and

cause an adjustment to one or more electrical or timing parameters associated with the CA interface of the memory device if the CA pattern is determined to not match the sample CA pattern.

15. The system of claim 9 , comprising:

the first command bus training mode is a command bus training (CBT) mode;

the memory device is a synchronous dynamic random access memory (SDRAM) device compatible with a double data rate standard;

the I/O circuitry configured to include a multi-input shift register to generate a signature value from the sampled CA pattern received from the SDRAM device to generate the first compressed value and forward the signature value to the controller logic; and

the controller logic configured to:

use the signature value to determine whether the CA pattern output via the command bus matches the sampled CA pattern, and

cause an adjustment to one or more electrical or timing parameters associated with the CA interface of the memory device if the CA pattern is determined to not match the sample CA pattern.

16. A method comprising:

generating a first command to trigger a memory device to enter one of a first command bus training mode or a second command bus training mode to train a command and address (CA) interface of the memory device;

causing a CA pattern to be output via a command bus coupled with the CA interface of the memory device,

wherein depending on whether the memory device was triggered to be in the first or the second command bus training mode:

receiving a sampled CA pattern from the memory device via a data bus coupled with a DQ interface of the memory device, compressing the received sampled CA pattern to generate a first compressed value based on the memory device being in the first command bus training mode and forwarding the first compressed value to controller logic of a memory controller; or

receiving a second compressed value from the memory device via the data bus, the second compressed value representing the sampled CA pattern compressed at the memory device based on the memory device being in the second command bus training mode and forwarding the second compressed value to the controller logic;

and

using the first compressed value or the second compressed value to determine whether the CA pattern output via the command bus matches the sampled CA pattern; and

causing an adjustment to one or more electrical or timing parameters associated with the CA interface of the memory device if the CA pattern output does not match the sampled CA pattern.

17. The method of claim 16 , comprising:

generating the CA pattern to be output via an even number of signal lines included in the command bus; and

the first compressed value or the second compressed value are an odd parity value of 1 based on the CA pattern, output via the even number of signal lines, not matching the sampled CA pattern.

18. The method of claim 17 , comprising:

the second command bus training mode is a command address training mode (CATM); and

the memory device is a synchronous dynamic random access memory (SDRAM) device compatible with a double data rate standard, the SDRAM device having circuitry to generate the odd parity value of 1 from the sampled CA pattern and indicate the odd parity value of 1 for the sampled CA pattern via the data bus to provide the second compressed value.

19. The method of claim 17 , comprising:

the first command bus training mode is a command bus training (CBT) mode;

the memory device is a synchronous dynamic random access memory (SDRAM) device compatible with a double data rate standard; and

using one or more exclusive OR (XOR) gates at the memory controller to generate the odd parity value of 1 from the sampled CA pattern received from the SDRAM device.

20. The method of claim 16 , the first command bus training mode is a command bus training (CBT) mode and the memory device is a synchronous dynamic random access memory (SDRAM) device compatible with a double data rate standard, the method further comprising:

calculating a cyclic redundancy check (CRC) value from the sampled CA pattern received from the SDRAM device to generate the first compressed value; and

using the CRC value to determine whether the CA pattern output via the command bus matches the sampled CA pattern.