Memory device, memory system, and program operation method thereof
A memory device includes a memory cell array and peripheral circuits. The memory cell array may include one or more first memory cells configured to store first type data, and one or more second memory cells configured to store second type data. The peripheral circuits may be coupled to the memory cell array and configured to perform a first program operation on the one or more first memory cells, perform the first program operation on the one or more second memory cells, and perform a second program operation on the one or more first memory cells. A first storage time corresponding to the first type data is longer than a second storage time corresponding to the second type data.
1. A memory device, comprising:
a memory cell array comprising one or more first memory cells configured to store first type data for a first storage time, and one or more second memory cells configured to store second type data for a second storage time; and
peripheral circuits coupled to the memory cell array and configured to:
perform a first program operation on the one or more first memory cells;
perform the first program operation on the one or more second memory cells; and
perform a second program operation on the one or more first memory cells,
wherein the first storage time corresponding to the first type data is longer than the second storage time corresponding to the second type data.
2. The memory device of claim 1 , wherein the second program operation is configured to adjust a threshold voltage range corresponding to the one or more first memory cells to become narrower than in the first program operation.
3. The memory device of claim 1 , wherein:
a first target programming state achieved by the first program operation on the one or more first memory cells is substantially identical to a second target programming state achieved by the second program operation on the one or more first memory cells.
4. The memory device of claim 1 , wherein:
the first program operation comprises a first programming pulse that includes a first pulse voltage and a first pulse duration, and the second program operation comprises a second programming pulse that includes a second pulse voltage and a second pulse duration; and
at least one of the first pulse voltage being substantially identical to the second pulse voltage or the first pulse duration being substantially identical to the second pulse duration is satisfied.
5. The memory device of claim 4 , wherein:
the first pulse voltage comprises a first initial pulse voltage and one or more first incremental voltages, and the second pulse voltage comprises a second initial pulse voltage and one or more second incremental voltages; and
each of the first initial pulse voltage and the one or more first incremental voltages is substantially identical to a corresponding one of the second initial pulse voltage and the one or more second incremental voltages.
6. The memory device of claim 1 , wherein the peripheral circuits are configured to:
apply a programming voltage to a word line corresponding to the one or more first memory cells, and a pass voltage to other word lines corresponding to the one or more second memory cells to perform the first program operation on the one or more first memory cells.
7. The memory device of claim 1 , wherein the peripheral circuits are configured to:
perform the first program operation on the one or more first memory cells and the first program operation on the one or more second memory cells sequentially or parallelly.
8. The memory device of claim 1 , wherein:
the one or more first memory cells comprise a plurality of first memory cells; and
the peripheral circuits are configured to:
verify whether the first program operation on at least one first memory cell of the plurality of first memory cells is successful based on applying a verification voltage to a word line corresponding to the at least one first memory cell; and
after a determination that the first program operation on the at least one first memory cell is successful, perform the second program operation on the at least one first memory cell.
9. The memory device of claim 1 , wherein:
the one or more first memory cells comprise a plurality of first memory cells in one memory string; and
the peripheral circuits are configured to:
after the first program operation on the plurality of first memory cells in the memory string is successful, perform the second program operation on the plurality of first memory cells in the memory string.
10. The memory device of claim 1 , wherein:
the one or more first memory cells comprise a plurality of first memory cells in one memory page; and
the peripheral circuits are configured to:
after the first program operation on the plurality of first memory cells in the memory page is successful, perform the second program operation on the plurality of first memory cells in the memory page.
11. The memory device of claim 1 , wherein:
the one or more first memory cells comprise a plurality of first memory cells in one block; and
the peripheral circuits are configured to:
after the first program operation on the plurality of first memory cells in the block is successful, perform the second program operation on the plurality of first memory cells in the block.
12. A memory system, comprising:
one or more memory devices, each comprising:
a memory cell array that comprises one or more first memory cells configured to store first type data for a first storage time, and one or more second memory cells configured to store second type data for a second storage time; and
peripheral circuits coupled to the memory cell array; and
a memory controller coupled to the one or more memory devices and configured to send a programming instruction signal to one of the one or more memory devices,
wherein in response to the programming instruction signal, the peripheral circuits of a corresponding memory device are configured to:
perform a first program operation on the one or more first memory cells;
perform the first program operation on the one or more second memory cells; and
perform a second program operation on the one or more first memory cells,
wherein the first storage time corresponding to the first type data is longer than the second storage time corresponding to the second type data.
13. A method for programming data, comprising:
performing a first program operation on one or more first memory cells and performing the first program operation on one or more second memory cells, the one or more first memory cells being configured to store first type data for a first storage time, and the one or more second memory cells being configured to store second type data for a second storage time; and
performing a second program operation on the one or more first memory cells,
wherein the first storage time corresponding to the first type data is longer than the second storage time corresponding to the second type data.
14. The method of claim 13 , wherein the second program operation is configured to adjust a threshold voltage range corresponding to the one or more first memory cells to become narrower than in the first program operation.
15. The method of claim 13 , wherein:
a first target programming state achieved by the first program operation on the one or more first memory cells is substantially identical to a second target programming state achieved by the second program operation on the one or more first memory cells.
16. The method of claim 15 , wherein:
the first program operation comprises a first programming pulse that includes a first pulse voltage and a first pulse duration, and the second program operation comprises a second programming pulse that includes a second pulse voltage and a second pulse duration; and
at least one of the first pulse voltage being substantially identical to the second pulse voltage or the first pulse duration being substantially identical to the second pulse duration is satisfied.
17. The method of claim 16 , wherein:
the first pulse voltage comprises a first initial pulse voltage and one or more first incremental voltages, and the second pulse voltage comprises a second initial pulse voltage and one or more second incremental voltages; and
each of the first initial pulse voltage and the one or more first incremental voltages is substantially identical to a corresponding one of the second initial pulse voltage and the one or more second incremental voltages.
18. The method of claim 17 , further comprising:
after applying each of the first initial pulse voltage and the one or more first incremental voltages to the one or more first memory cells, applying a verification voltage to a word line corresponding to the one or more first memory cells to verify whether the first program operation on the one or more first memory cells is successful to enable the one or more first memory cells to reach the first target programming state.
19. The method of claim 13 , further comprising:
applying a programming voltage to a word line corresponding to the one or more first memory cells, and a pass voltage to other word lines corresponding to the one or more second memory cells to perform the first program operation on the one or more first memory cells.
20. The method of claim 13 , wherein performing the first program operation on the one or more first memory cells and the one or more second memory cells comprises performing the first program operation on the one or more first memory cells and the first program operation on the one or more second memory cells sequentially or parallelly.