Single photon detector, electronic device, and LiDAR device
Disclosed is a single photon detector comprising a semiconductor substrate and a 2D material layer provided adjacent to the semiconductor substrate, the semiconductor substrate includes a first well having a first conductivity type, a heavily doped region having a second conductivity type different from the first conductivity type, and a depletion region provided between the first well and the heavily doped region.
1. A single photon detector comprising:
a semiconductor substrate; and
a 2D material layer provided adjacent to the semiconductor substrate,
wherein the semiconductor substrate includes a first well having a first conductivity type, a heavily doped region having a second conductivity type different from the first conductivity type, and a depletion region provided between the first well and the heavily doped region.
2. The single photon detector of claim 1 , further comprising:
a fixing layer provided between the semiconductor substrate and the 2D material layer.
3. The single photon detector of claim 1 , further comprising:
a transition layer provided between the semiconductor substrate and the 2D material layer.
4. The single photon detector of claim 1 , wherein the 2D material layer is provided opposite the heavily doped region with the first well interposed therebetween.
5. The single photon detector of claim 1 , further comprising:
a substrate region provided between the first well and the 2D material layer.
6. The single photon detector of claim 1 , wherein the 2D material layer includes a tin transition metal or a chalcogenide-based material.
7. The single photon detector of claim 1 , further comprising:
a second well provided between the first well and the heavily doped region,
wherein the second well has the first conductivity type.
8. The single photon detector of claim 1 , further comprising:
a guard ring provided on a side surface of the heavily doped region,
wherein the guard ring has the second conductivity type.
9. The single photon detector of claim 1 , further comprising:
a contact spaced apart from the heavily doped region; and
a relief region provided between the contact and the first well,
wherein the contact and the relief region have the first conductivity type.
10. The single photon detector of claim 1 , further comprising:
a conductive layer provided on an opposite side of the semiconductor substrate with the 2D material layer interposed therebetween,
wherein the conductive layer includes a transparent conductive material.
11. The single photon detector of claim 1 , further comprising:
a conductive pattern provided on an opposite side of the semiconductor substrate with the 2D material layer interposed therebetween,
wherein the conductive pattern includes a transparent conductive material or metal.
12. The single photon detector of claim 1 , further comprising:
a control layer provided on the the semiconductor substrate; and
a connection layer provided between the control layer and the semiconductor substrate.
13. An electronic device comprising:
a single photon detector including a semiconductor substrate and a 2D material layer provided adjacent to the semiconductor substrate,
wherein the semiconductor substrate includes a first well having a first conductivity type, a heavily doped region having a second conductivity type different from the first conductivity type, and a depletion region provided between the first well and the heavily doped region.
14. A LIDAR device comprising:
an electronic device including a single photon detector,
wherein the single photon detector includes a semiconductor substrate and a 2D material layer provided adjacent to the semiconductor substrate,
wherein the semiconductor substrate includes a first well having a first conductivity type, a heavily doped region having a second conductivity type different from the first conductivity type, and a depletion region provided between the first well and the heavily doped region.