IP Library › Granted Patent US 12,101,966
Granted Patent B2
US 12,101,966 · App. 18/138,765 · Granted Sep 24, 2024

Display device and electronic device

Inventors: Manabu Sato (Oyama, JP); Hironori Matsumoto (Tochigi, JP); Masataka Nakada (Tochigi, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H10K59/1213G06F3/0412G06F3/042G06V40/1318G09G3/3233H10K39/34G06F2203/04108G09G2300/0852G09G2354/00
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Quick Facts
Patent No.
US 12,101,966
App. No.
18/138,765
Granted
Sep 24, 2024
Kind
B2
Abstract

An inexpensive display device with a narrow bezel is provided. The display device includes a first pixel including a light-emitting device, a second pixel including a light-receiving device, and a reading circuit for reading data obtained by the second pixel. The reading circuit includes a first circuit included in a mounted IC chip and a second circuit monolithically formed over a substrate over which a pixel circuit is formed. With this structure, a circuit corresponding to the second circuit can be omitted from the IC chip, so that the IC chip can be downsized.

Claims (115)

1. A display device comprising:

a substrate;

a first pixel circuit; and

an A/D converter circuit,

wherein the A/D converter circuit comprises a first circuit,

wherein the first pixel circuit and the first circuit are over the same substrate,

wherein the first circuit comprises a resistive divider circuit,

wherein the resistive divider circuit comprises a plurality of transistors,

wherein each of the plurality of transistors comprises:

a semiconductor layer;

a first insulating layer;

a source;

a drain; and

a first gate,

wherein the first gate and the drain are electrically connected to each other,

wherein each of the plurality of transistors comprises a channel formation region in the semiconductor layer,

wherein each of the plurality of transistors comprises a metal oxide in the channel formation region,

wherein each channel formation region of the plurality of transistors is provided along a side surface of the first insulating layer,

wherein the plurality of transistors are electrically connected in series so that the source of a first transistor of the plurality of transistors is electrically connected to the drain and the first gate of a second transistor of the plurality of transistors adjacent to the first transistor,

wherein each of the plurality of transistors comprises a second gate,

wherein a source potential of the second transistor is lower than a source potential of the first transistor, and

wherein the second gate of the first transistor is electrically connected to the source of the second transistor.

2. A display device comprising:

a substrate;

a first pixel circuit over the substrate; and

an A/D converter circuit,

wherein the A/D converter circuit comprises a first circuit over the substrate,

wherein the first circuit comprises a resistive divider circuit,

wherein the resistive divider circuit comprises a plurality of transistors,

wherein each of the plurality of transistors comprises:

a semiconductor layer;

a first insulating layer;

an opening;

a source;

a drain;

a first gate; and

a second gate,

wherein the drain and the first gate are electrically connected to each other,

wherein each of the plurality of transistors comprises a channel formation region in the semiconductor layer,

wherein each of the plurality of transistors comprises a metal oxide in the channel formation region,

wherein each channel formation region of the plurality of transistors is provided along a side surface of the first insulating layer,

wherein the plurality of transistors are electrically connected in series so that the source of a first transistor of the plurality of transistors is electrically connected to the drain and the first gate of a second transistor of the plurality of transistors adjacent to the first transistor,

wherein a source potential of the second transistor is lower than a source potential of the first transistor,

wherein the second gate of the first transistor is electrically connected to the source of the second transistor,

wherein the source of the first transistor, the drain of the first transistor, and the first insulating layer are provided over the substrate, and

wherein the first insulating layer and the source of the first transistor include the opening reaching the drain.

3. The display device according to claim 2 , further comprising:

a second insulating layer over the semiconductor layer,

wherein the first gate of the first transistor is provided over the second insulating layer, and

wherein the semiconductor layer, the second insulating layer, and the first gate of the first transistor cover the opening.

4. The display device according to claim 2 ,

wherein the first transistor comprises an offset region provided between the channel formation region and the drain.

5. The display device according to claim 3 , further comprising:

a third insulating layer over the source,

wherein the second gate is overlapping with the source and the drain, and

wherein the second gate is provided between the first insulating layer and the third insulating layer.

6. A display device comprising:

a substrate;

a first pixel circuit over the substrate; and

an A/D converter circuit,

wherein the A/D converter circuit comprises a first circuit over the substrate,

wherein the first circuit comprises a resistive divider circuit,

wherein the resistive divider circuit comprises a plurality of transistors,

wherein each of the plurality of transistors comprises:

a semiconductor layer;

a first insulating layer;

a second insulating layer over the semiconductor layer;

a first conductive layer under the first insulating layer;

a second conductive layer over the first insulating layer;

a third conductive layer over the second insulating layer;

a fourth conductive layer overlapping with the second conductive layer,

an opening;

a source;

a drain;

a first gate; and

a second gate,

wherein each of the plurality of transistors comprises a channel formation region in the semiconductor layer,

wherein each of the plurality of transistors comprises a metal oxide in the channel formation region,

wherein each channel formation region of the plurality of transistors is provided along a side surface of the first insulating layer,

wherein the plurality of transistors are electrically connected in series so that the source of a first transistor of the plurality of transistors is electrically connected to the drain and the first gate of a second transistor of the plurality of transistors adjacent to the first transistor,

wherein a source potential of the second transistor is lower than a source potential of the first transistor,

wherein the second gate of the first transistor is electrically connected to the source of the second transistor,

wherein the first insulating layer and the second conductive layer include the opening reaching the first conductive layer,

wherein the semiconductor layer, the second insulating layer, and the third conductive layer cover the opening,

wherein the first conductive layer is configured to be the source of the first transistor,

wherein the second conductive layer is configured to be the drain of the second transistor,

wherein the third conductive layer is configured to be the first gate of the second transistor, and

wherein the fourth conductive layer is configured to be the second gate of the first transistor.

7. The display device according to claim 1 ,

wherein the A/D converter circuit comprises a second circuit,

wherein the second circuit is provided in an IC chip on the substrate, and

wherein the second circuit is electrically connected to the first circuit.

8. The display device according to claim 1 ,

wherein the first pixel circuit comprises a light-receiving device.

9. The display device according to claim 8 , further comprising a second pixel circuit,

wherein the second pixel circuit comprises a light-emitting device.

10. An electronic device comprising the display device according to claim 1 , wherein an image of a fingerprint is obtained with use of the first pixel circuit so that fingerprint authentication is performed.

11. The display device according to claim 2 ,

wherein the A/D converter circuit comprises a second circuit,

wherein the second circuit is provided in an IC chip on the substrate, and

wherein the second circuit is electrically connected to the first circuit.

12. The display device according to claim 2 ,

wherein the first pixel circuit comprises a light-receiving device.

13. The display device according to claim 12 , further comprising a second pixel circuit,

wherein the second pixel circuit comprises a light-emitting device.

14. An electronic device comprising the display device according to claim 2 , wherein an image of a fingerprint is obtained with use of the first pixel circuit so that fingerprint authentication is performed.

15. The display device according to claim 6 ,

wherein the A/D converter circuit comprises a second circuit,

wherein the second circuit is provided in an IC chip on the substrate, and

wherein the second circuit is electrically connected to the first circuit.

16. The display device according to claim 6 ,

wherein the first pixel circuit comprises a light-receiving device.

17. The display device according to claim 16 , further comprising a second pixel circuit,

wherein the second pixel circuit comprises a light-emitting device.

18. An electronic device comprising the display device according to claim 6 , wherein an image of a fingerprint is obtained with use of the first pixel circuit so that fingerprint authentication is performed.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 25, 2023
From: SATO, MANABU; MATSUMOTO, HIRONORI; NAKADA, MASATAKA
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 063425/0567 →
Priority Claims (1)
JP 2022-075019 · Apr 28, 2022 · national
Continuity (1)
Related Publication 20230354643A1 · Nov 2, 2023