Magnetoresistance memory device and method of manufacturing magnetoresistance memory device

1. A magnetoresistance memory device comprising:

a first conductor;

a variable resistance material on a top surface of the first conductor;

a second conductor on a top surface of the variable resistance material;

a first insulator other than nitride on a top surface of the second conductor;

a magnetoresistance effect element on a top surface of the first insulator; and

a third conductor located on a side surface of the first insulator and extending on a side surface of the second conductor and a side surface of the magnetoresistance effect element.

2. The device of claim 1 , wherein the second conductor is not in contact with the magnetoresistance effect element.

3. The device of claim 1 , wherein:

the magnetoresistance effect element includes:

a first ferromagnetic layer;

a first insulating layer on a top surface of the first ferromagnetic layer; and

a second ferromagnetic layer on a top surface of the first insulating layer; and

the third conductor extends on the side surface of the second conductor and a side surface of the first ferromagnetic layer.

4. The device of claim 1 , wherein the third conductor contains a same material as a material contained in the second conductor.

5. The device of claim 1 , wherein:

the second conductor contains one or more of titanium nitride, aluminum, tantalum, tungsten, Copper and carbon; and

the third conductor contains the one or more of titanium nitride, aluminum, tantalum, tungsten, copper, and carbon contained in the second conductor.

6. The device of claim 1 , wherein:

the second conductor has a second side surface;

the side surface of the second conductor is located above the second side surface of the second conductor; and

the side surface of the first insulator deviates from an extension line of the second side surface of the second conductor.

7. A method of manufacturing a magnetoresistance memory device, comprising:

forming a first conductor;

forming a variable resistance material on a top surface of the first conductor;

forming a second conductor on a top surface of the variable resistance material;

forming a first insulator other than nitride on a first portion of a top surface of the second conductor;

forming a magnetoresistance effect element on a top surface of the first insulator; and

forming a third conductor to extend on a side surface of the second conductor, a side surface of the first insulator, and a side surface of the magnetoresistance effect element.

8. The method of claim 7 , wherein the forming of the third conductor includes forming a material removed from the first portion of the top surface of the second conductor on the side surface of the second conductor, the side surface of the first insulator, and the side surface of the magnetoresistance effect element.

9. The method of claim 7 , wherein the forming of the third conductor includes irradiating the first portion of the top surface of the second conductor with ion beams.

10. The method of claim 7 , wherein the forming of the magnetoresistance effect element includes the magnetoresistance effect element away from the second conductor.

11. The method of claim 7 , further comprising partly removing the first conductor, the variable resistance material, and the second conductor.

12. The method of claim 7 , wherein the forming of the magnetoresistance effect element includes:

forming a first ferromagnetic layer on the top surface of the first insulator;

forming a first insulating layer on a top surface of the first ferromagnetic layer; and

forming a second ferromagnetic layer on a top surface of the first insulating layer.

13. The method of claim 7 , wherein:

the second conductor contains one or more of titanium nitride, aluminum, tantalum, tungsten, copper and carbon; and

the third conductor contains the one or more of titanium nitride, aluminum, tantalum, tungsten, copper, and carbon contained in the second conductor.