Sputtering target and method for manufacturing sputtering target
Provided is a sputtering target capable of reducing generation of particles, and a method for producing the same. The sputtering target includes: 10 mol % or more and 85 mol % or less of Co, 0 mol % or more and 47 mol % or less of Pt, and 0 mol % or more and 47 mol % or less of Cr, as metal components; and at least B 6 O as an oxide component.
1. A sputtering target comprising:
10 mol % or more and 85 mol % or less of Co, 0 mol % or more and 47 mol % or less of Pt, and 0 mol % or more and 47 mol % or less of Cr, as metal components; and
at least B 6 O as an oxide component; wherein an amount of B eluted is 500 μg/L/cm 2 or less,
and wherein the sputtering target has a diffraction peak of B 6 O (110) in a range of 2θ=30 to 35° and a diffraction peak of B 6 O (104) in a range of 2θ=35 to 40° in an XRD diffraction pattern using Cu as a radiation source.
2. The sputtering target according to claim 1 , wherein B 6 O is contained an amount of 0.1 mol % or more and 10 mol % or less.
3. The sputtering target according to claim 1 , comprising an oxide of at least one selected from the group consisting of Cr, Ta, Ti, Si, Zr, Al, Nb, B and Co as an oxide component, and wherein a volume ratio of the total oxide to the total sputtering target is 1 mol % or more and 20 mol % or less.
4. The sputtering target according to claim 1 , comprising an additive element component selected from the group consisting of B, N, Ti, V, Mn, Zr, Nb, Ru, Mo, Ta, W, Si and Al in a total amount of 35 mol % or less.
5. The sputtering target according to claim 2 , comprising an oxide of at least one selected from the group consisting of Cr, Ta, Ti, Si, Zr, Al, Nb, B and Co as an oxide component, and wherein a volume ratio of the total oxide to the total sputtering target is 1 mol % or more and 20 mol % or less.
6. The sputtering target according to claim 2 , comprising an additive element component selected from the group consisting of B, N, Ti, V, Mn, Zr, Nb, Ru, Mo, Ta, W, Si and Al in a total amount of 35 mol % or less.
7. The sputtering target according to claim 3 , comprising an additive element component selected from the group consisting of B, N, Ti, V, Mn, Zr, Nb, Ru, Mo, Ta, W, Si and Al in a total amount of 35 mol % or less.
8. The sputtering target according to claim 1 , wherein the sputtering target has a half-value width of the diffraction peak for B 6 O (110) in a range of 2θ=30 to 35° of 0.5 deg or more, and a half-value width of the diffraction peak for B 6 O (104) in a range of 2θ=35 to 40° of 0.5 deg or more in an XRD diffraction pattern using Cu as a radiation source.
9. A method for producing a sputtering target comprising:
preparing 10 mol % or more and 85 mol % or less of Co, 0 mol % or more and 47 mol % or less of Pt, and 0 mol % or more and 47 mol % or less of Cr as metal powder;
adding B 6 O in the form of oxide powder to the metal powder to mix them; and
sintering the mixed powder at a sintering temperature of 900° C. to 1200° C. to produce a sputtering target in which an amount of B eluted is 500 μg/L/cm 2 or less and having a diffraction peak of B 6 O (110) in a range of 2θ=30 to 35° and a diffraction peak of B 6 O (104) in a range of 2θ=35 to 40° in an XRD diffraction pattern using Cu as a radiation source.