Transistor channel passivation with 2D crystalline material
Transistor structures with a channel semiconductor material that is passivated with two-dimensional (2D) crystalline material. The 2D material may comprise a semiconductor having a bandgap offset from a band of the channel semiconductor. The 2D material may be a thin as a few monolayers and have good temperature stability. The 2D material may be a conversion product of a sacrificial precursor material, or of a portion of the channel semiconductor material. The 2D material may comprise one or more metal and a chalcogen. The channel material may be a metal oxide semiconductor suitable for low temperature processing (e.g., IGZO), and the 2D material may also be compatible with low temperature processing (e.g., <450° C.). The 2D material may be a chalcogenide of a metal present in the channel material (e.g., ZnS x or ZnSe x ) or of a metal absent from the channel material when formed from a sacrificial precursor.
1. A transistor structure, comprising:
a channel material comprising oxygen and a metal;
a source contact and a drain contact in direct contact with the channel material;
a gate stack over a first region of the channel material, where the gate stack comprises a gate electrode material and a gate insulator, and wherein the gate insulator is in direct contact with the first region of the channel material; and
a material comprising a metal and a chalcogen in direct contact with a second region of the channel material, the material comprising the metal and the chalcogen between the gate stack and each of the source contact and the drain contact.
2. The transistor structure of claim 1 , wherein the material comprising the metal and the chalcogen is in direct contact with a sidewall of the source contact and in direct contact with a sidewall of the drain contact.
3. The transistor structure of claim 2 , wherein the material comprising the metal and the chalcogen is in direct contact with the gate insulator.
4. The transistor structure of claim 1 , wherein:
the channel material comprises oxygen and at least one of Cu, Zn, Cd, Ni, Co, Pd, Pt, Ti, Cr, V, Nb, W, Mo, Al, Sn, Ga, In, P, As, or Sb; and
the material comprising the metal and the chalcogen comprises S, Se, or Te and at least one of Cu, Zn, Cd, Ni, Co, Pd, Pt, Ti, Cr, V, Nb, W, Mo, Al, Sn, Ga, In, P, As, or Sb.
5. The transistor structure of claim 1 , wherein the material comprising the metal and the chalcogen comprises at least one of S, Se, or Te.
6. The transistor structure of claim 5 , wherein the material comprising the metal and the chalcogen comprises a d-block or p-block metal.
7. The transistor structure of claim 6 , wherein the material comprising the metal and the chalcogen is predominantly a binary compound with composition MC x , wherein M is the metal, Cis Se or S, and x is between 0.2 and 4.
8. The transistor structure of claim 7 , wherein M is Zn and, Cis S.
9. The transistor structure of claim 1 , wherein the first channel material comprises a plurality of metals, and the second material comprising the metal and the chalcogen lacks at least one of the plurality of metals.
10. The transistor structure of claim 9 , wherein:
the channel material comprises Zn, Ga, and In; and
the material comprising the metal and the chalcogen comprises at least one of Zn, Ga, or In.
11. The transistor structure of claim 10 , wherein the first channel material comprises O, In, Ga, and Zn, and wherein the material comprising the metal and the chalcogen comprises Zn.
12. The transistor structure of claim 1 , further comprising
a plurality of complementary metal-oxide-semiconductor (CMOS) field effect transistor (FET) structures, wherein individual ones of the CMOS FET structures comprise a Group IV semiconductor material; and
one or more levels of interconnect metallization over the plurality of CMOS FET structures, the levels of interconnect metallization coupling the plurality of CMOS FET structures to the transistor structure.
13. A transistor structure, comprising:
a first material comprising oxygen and a metal;
a source contact and a drain contact electrically coupled to the first material;
a gate stack over a first region of the first material, where the gate stack comprises a gate electrode material and a gate insulator, and wherein the gate insulator is in contact with the first region of the first material; and
a second material comprising a metal and a chalcogen in contact with a second region of the first material, the second material between the gate stack and each of the source contact and the drain contact, wherein the second material has hexagonal crystallinity within a two-dimensional (2D) plane of the second material.
14. An integrated circuit (IC) die, comprising:
a plurality of complementary metal-oxide-semiconductor (CMOS) field effect transistor (FET) structures, wherein individual ones of the CMOS FET structures comprise a Group IV semiconductor material; and
a plurality of back-end transistor structures over the CMOS FET structures, with one or more levels of interconnect metallization therebetween, wherein individual ones of the back-end transistor structures comprise:
a first material comprising oxygen and a metal;
a source contact and a drain contact electrically coupled to the first material;
a gate stack over a first region of the first material, where the gate stack comprises a gate electrode material and a gate insulator, and wherein the gate insulator is in contact with the first region of the first material; and
a second material in contact with a second region of the first material between the gate stack and each of the source contact and the drain contact, wherein the second material comprises a metal and a chalcogen.
15. A system comprising:
the IC die of claim 14 ; and
a power supply coupled to power the IC die.
16. The system of claim 15 , wherein the IC die is a processor to execute instructions stored in an electronic memory.
17. The system of claim 15 , further comprising a battery coupled to the power supply.