Strategic memory cell reliability management

1. A method, comprising:

activating a set of memory cells in a memory device to perform a memory access, the memory device comprising a plurality of sets of memory cells corresponding to respective portions of an array of memory cells of the memory device;

receiving signaling indicative of a command for a precharge operation on a set of the plurality of sets of memory cells, wherein the signaling comprises one or more bits that indicate whether to disable a flip operation on the set of memory cells;

performing the precharge operation on the set of memory cells based at least in part on the signaling; and

reading the set of memory cells subsequent to activating the set of memory cells and prior to pre-charging the set of memory cells.

2. The method of claim 1 , further comprising, in response to the one or more bits indicating to not disable the flip operation, performing the precharge operation by randomly performing the flip operation on the set of memory cells.

3. The method of claim 1 , wherein the memory device is configured to operate according to a Compute Express Link (CXL) protocol.

4. A method, comprising:

activating a set of memory cells in a memory device to perform a memory access, the memory device comprising a plurality of sets of memory cells corresponding to respective portions of an array of memory cells of the memory device;

receiving signaling indicative of a command for a precharge operation on a set of the plurality of sets of memory cells, wherein the signaling comprises one or more bits that indicate whether to disable a flip operation on the set of memory cells; and

performing the precharge operation on the set of memory cells based at least in part on the signaling; and

performing an error correction operation, wherein performance of the error correction operation causes the one or more bits to indicate to disable the flip operation.

5. The method of claim 4 , wherein performing the error correction operation comprises writing a number of different data patterns to the set of memory cells.

6. The method of claim 4 , wherein performing the error correction operation comprises reading a number of different data patterns from the set of memory cells.

7. The method of claim 1 , wherein the set of memory cells is a row of memory cells.

8. The method of claim 1 , wherein the received signaling is associated with a non-user command.

9. An apparatus, comprising:

a memory controller configured to receive a command associated with a plurality of memory cells in a memory device; and

a processing device coupled to the plurality of memory cells, the processing device to:

activate a set of memory cells in a memory device to perform a memory access, the memory device comprising a plurality of memory cells of a memory array;

perform a read operation on the set of memory cells;

receive a command to perform a precharge operation on the set of memory cells, wherein the command comprises one or more data units that indicate whether to disable a flip operation on the set of memory cells; and

perform the precharge operation on the set of memory cells.

10. The apparatus of claim 9 , wherein the processing device is to, in response to the one or more bits indicating to not disable the flip operation, determine whether to perform the flip operation based on a randomized selection of the flip operation.

11. The apparatus of claim 10 , wherein the processing device is to, in response to determining to perform the flip operation, inverting the data values stored in the set of memory cells.

12. The apparatus of claim 10 , wherein the processing device is to perform the precharge operation on the set of memory cells using the inverted data values.

13. The apparatus of claim 9 , further comprising a ferroelectric field-effect transistor (FeFET) memory device.

14. The apparatus of claim 9 , further comprising a dynamic random-access memory (DRAM), ferroelectric random-access memory (FeRAM), or a resistive random-access memory (ReRAM) device, or any combination thereof.

15. A system, comprising:

a host;

a memory device coupled to the host through a sideband channel, the memory device comprising:

a memory array comprising a plurality of memory cells; and

a memory controller coupled to the memory array, the memory controller to:

activate a set of memory cells in a memory device to perform a memory access, the memory device comprising a plurality of memory cells of a memory array;

perform the memory access on the set of memory cells;

receive a command, via the sideband channel from the host, to perform a precharge operation on the set of memory cells, wherein the command comprises one or more bits that indicates whether to disable a flip operation on the set of memory cells;

perform the precharge operation on the set of memory cells; and

in response to the one or more bits indicating to not disable the flip operation, determine whether to perform the flip operation based on a randomized selection of the flip operation.

16. The apparatus of claim 15 , wherein the processing device is to:

in response to determining to perform the flip operation, invert the data values stored in the set of memory cells; and

perform the precharge operation on the set of memory cells using the inverted data values.

17. The system of claim 15 , wherein the processing device is to:

receive a message from the host to activate the set of memory cells; and

activate the set of memory cells in response to receiving the message.

18. The system of claim 15 , wherein the processing device is to perform the precharge operation independent of receiving instructions to perform the precharge operation from the host.

19. The system of claim 15 , wherein the processing device is to perform the precharge operation without performing the flip operation in response to performing an error correction operation.