Method of forming topology-controlled amorphous carbon polymer film

1. A method of top-selective deposition using an initially flowable carbon-based film on a substrate having a recess defined by a top surface, sidewall, and a bottom, comprising steps of:

(i) depositing the initially flowable carbon-based film in the recess of the substrate in a reaction space, wherein the initially flowable carbon-based film accumulates within the recess, and then stopping the deposition step, wherein after deposition is stopped, the initially flowable carbon-based film forms a carbon-based film in the recess;

(ii) exposing the carbon-based film in the recess to a nitrogen plasma in an atmosphere substantially devoid of hydrogen and oxygen so as to redeposit a portion of the carbon-based film in the recess, wherein the carbon-based film is redeposited selectively on the top surface to form a redeposited carbon-based film on the top surface, wherein the nitrogen plasma is anisotropic; and

(iii) removing a portion of the carbon-based film remaining on the bottom of the recess by plasma ashing,

wherein the plasma ashing does not remove all of the redeposited carbon-based film on the top surface; and

repeating steps (i), (ii), and (iii) to form a top-selective deposited carbon-based film.

2. The method according to claim 1 , wherein steps (i) and (ii) are repeated multiple times until a thickness of the redeposited carbon-based film on the top surface reaches a desired final thickness.

3. The method according to claim 1 , wherein a thickness of the initially flowable carbon-based film accumulated within the recess in step (i) is more than a monolayer thickness but 15 nm or less.

4. The method according to claim 1 , wherein the atmosphere in step (ii) is in the reaction space used in step (i).

5. The method according to claim 1 , wherein the atmosphere in step (ii) is in another reaction space different from the reaction space used in step (i).

6. The method according to claim 1 , wherein step (ii) comprises:

feeding N 2 to the atmosphere without feeding hydrogen and oxygen; and

applying RF power to the atmosphere in a manner generating the nitrogen plasma.

7. The method according to claim 6 , wherein RF power is in a range of 0.14 W/cm 2 to 1.41 W/cm 2 per unit area of the substrate, and a duration of step (ii) is in a range of 10 seconds to 300 seconds.

8. The method according to claim 1 , wherein step (i) is conducted by cyclic nitrogen plasma deposition.

9. The method according to claim 1 , wherein the top surface of the substrate on which the carbon-based film is redeposited is constituted by silicon.

10. The method according to claim 1 , comprising, after step (ii), removing the portion of carbon-based film remaining on the bottom of the recess by O 2 , H 2 , O 2 /Ar, or N 2 /H 2 plasma ashing.

11. The method according to claim 1 , wherein the carbon-based film in the recess is an amorphous carbon film.

12. The method according to claim 1 , wherein the initially flowable carbon-based film is constituted by a hydrogenated amorphous carbon polymer, whereas the redeposited carbon-based film on the top surface is constituted by a nitrogen-doped hydrogenated amorphous carbon polymer.

13. The method according to claim 1 , wherein the plasma ashing comprises N 2 /H 2 plasma ashing.

14. The method according to claim 1 , wherein the plasma ashing comprises using an ashing gas comprising a mixture of Ar and H 2 .

15. The method according to claim 1 , wherein the plasma ashing comprises using an ashing gas comprising a mixture of He and H 2 .

16. The method according to claim 1 , wherein the plasma ashing comprises using an ashing gas comprising a mixture of mixture of O 2 and He.

17. The method according to claim 1 , wherein step (iii) is repeated a lesser number of times than a number of times steps (i) and (ii) are repeated.

18. The method according to claim 1 , wherein the pressure in step (i) is in a range of 100 to 1000 Pa.