Microelectronic assemblies
Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate having a first surface and an opposing second surface; a first die having a first surface and an opposing second surface embedded in a first dielectric layer, where the first surface of the first die is coupled to the second surface of the package substrate by first interconnects; a second die having a first surface and an opposing second surface embedded in a second dielectric layer, where the first surface of the second die is coupled to the second surface of the first die by second interconnects; and a third die having a first surface and an opposing second surface embedded in a third dielectric layer, where the first surface of the third die is coupled to the second surface of the second die by third interconnects.
1. A microelectronic assembly, comprising:
a package substrate;
a first insulating material layer above the package substrate, the first insulating material layer having a first lateral width;
a first die in the first insulating material layer, the first die having a top side opposite a bottom side, and a first sidewall and a second sidewall between the top side and the bottom side, the second sidewall laterally opposite the first sidewall;
a first interconnect in the first insulating material layer, the first interconnect laterally spaced apart from the first sidewall of the first die;
a second interconnect in the first insulating material layer, the second interconnect laterally spaced apart from the second sidewall of the first die;
a redistribution layer over the first insulating material and over the first die, the redistribution layer coupled to the first interconnect, the redistribution layer coupled to the first die, the redistribution layer coupled to the second interconnect, and the redistribution layer having a second lateral width the same as the first lateral width;
a second insulating material layer over the redistribution layer, the second insulating material layer having a third lateral width, the third lateral width the same as the second lateral width;
a second die coupled to the redistribution layer, wherein the second insulating material layer surrounds and extends beyond the second die; and
a third die coupled to the redistribution layer, the third die laterally spaced apart from the second die, wherein the second insulating material layer surrounds and extends beyond the third die.
2. The microelectronic assembly of claim 1 , wherein the third die is thinner than the second die.
3. The microelectronic assembly of claim 1 , further comprising:
a fourth die above and coupled to the third die.
4. The microelectronic assembly of claim 1 , wherein the first insulating material layer has a vertical thickness the same as a vertical thickness of the first interconnect and the second interconnect.
5. The microelectronic assembly of claim 1 , wherein the first insulating material layer has a vertical thickness greater than a vertical thickness of the first interconnect and the second interconnect.
6. The microelectronic assembly of claim 1 , wherein the first interconnect and the second interconnect extend below a bottom of the first die.
7. The microelectronic assembly of claim 1 , further comprising a third interconnect laterally spaced apart from the first interconnect, and a fourth interconnect laterally spaced apart from the second interconnect.
8. The microelectronic assembly of claim 7 , wherein the third interconnect and the first interconnect have a pitch, the fourth interconnect and the second interconnect have the pitch, and the pitch is between 100 to 300 microns.
9. A microelectronic assembly, comprising:
a package substrate;
a first insulating material layer above the package substrate, the first insulating material layer having a first side and a second side, the second side laterally opposite to the first side;
a first die in the first insulating material layer;
a first interconnect in the first insulating material layer, the first interconnect laterally spaced apart from the first die;
a second interconnect in the first insulating material layer, the second interconnect laterally spaced apart from the first die, the first die laterally between the first interconnect and the second interconnect;
a redistribution layer over the first insulating material and over the first die, the redistribution layer coupled to the first interconnect, the redistribution layer coupled to the first die, and the redistribution layer coupled to the second interconnect, the redistribution layer extending from the first side of the first insulating layer to the second side of the first insulating layer;
a second insulating material layer over the redistribution layer, the second insulating material layer extending from the first side of the first insulating layer to the second side of the first insulating layer;
a second die in the second insulating material layer, the second die coupled to the redistribution layer;
a third die in the second insulating material layer, the third die coupled to the redistribution layer, and the third die laterally spaced apart from the second die, wherein the third die is thinner than the second die; and
a fourth die above and coupled to the third die.
10. The microelectronic assembly of claim 9 , wherein the first insulating material layer has a vertical thickness the same as a vertical thickness of the first interconnect and the second interconnect.
11. The microelectronic assembly of claim 9 , wherein the first insulating material layer has a vertical thickness greater than a vertical thickness of the first interconnect and the second interconnect.
12. The microelectronic assembly of claim 9 , further comprising a third interconnect laterally spaced apart from the first interconnect, and a fourth interconnect laterally spaced apart from the second interconnect, and wherein the third interconnect and the first interconnect have a pitch, the fourth interconnect and the second interconnect have the pitch, and the pitch is between 100 to 300 microns.
13. A microelectronic assembly, comprising:
a package substrate;
a first insulating material layer above the package substrate, the first insulating material layer having a first lateral width;
a first die in the first insulating material layer, the first die having a top side opposite a bottom side, and a first sidewall and a second sidewall between the top side and the bottom side, the second sidewall laterally opposite the first sidewall;
a first interconnect in the first insulating material layer, the first interconnect laterally spaced apart from the first sidewall of the first die;
a second interconnect in the first insulating material layer, the second interconnect laterally spaced apart from the second sidewall of the first die;
a redistribution layer over the first insulating material and over the first die, the redistribution layer coupled to the first interconnect, the redistribution layer coupled to the first die, and the redistribution layer coupled to the second interconnect;
a second insulating material layer over the redistribution layer, the second insulating material layer having a second lateral width, the second lateral width the same as the first lateral width;
a second die coupled to the redistribution layer, wherein the second insulating material layer surrounds and extends beyond the second die; and
a third die coupled to the redistribution layer, the third die laterally spaced apart from the second die, wherein the second insulating material layer surrounds and extends beyond the third die, wherein the third die is thinner than the second die.