IP Library › Granted Patent US 12,114,402
Granted Patent B2
US 12,114,402 · App. 16/975,607 · Granted Oct 8, 2024

Holding device and method of manufacturing holding device

Inventors: Ryunosuke Sakamaki (Nagoya, JP); Katsuya Takaoka (Nagoya, JP); Hiroshi Watanabe (Nagoya, JP)
Assignee: NITERRA CO., LTD.
H05B3/12C04B35/581H05B3/03H05B3/06H05B3/20H05B3/283H05B3/74H01L21/683H05B2203/016
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Quick Facts
Patent No.
US 12,114,402
App. No.
16/975,607
Granted
Oct 8, 2024
Kind
B2
Abstract

A holding device including a ceramic member formed of a sintered ceramic material containing aluminum nitride as a main component, a heating resistor element formed of a metal and disposed in the ceramic member, and an electrically conductive electricity supply member in contact with the heating resistor element. The holding device holds an object on the surface of the ceramic member. In the holding device, at least a portion of the surface of the heating resistor element, excluding its contact surface for contact with the electricity supply member, is covered with a coat layer formed of a nitride containing at least one of Al, Ti, Zr, V, Ta, and Nb. Also disclosed is a method of manufacturing the holding device.

Claims (17)

1. A holding device comprising:

a ceramic member having a first surface approximately perpendicular to a first direction and formed of a sintered ceramic material containing aluminum nitride as a main component;

a heating resistor element formed of a metal and disposed in the ceramic member;

an electricity supply connection member which is electrically conductive and is in contact with the heating resistor element; and

an electricity supply terminal which is electrically conductive and is electrically connected to the electricity supply connection member,

the holding device being adapted to hold an object on the first surface of the ceramic member and being characterized in that

at least a portion of a surface of the heating resistor element, excluding its contact surface for contact with the electricity supply connection member, is covered with a coat layer formed of a nitride selected from the group consisting of AlN, AlTiN, AlTiSiN, AlZrN, AlTiCrN, VN, and NbN.

2. A holding device according to claim 1 , wherein the coat layer has a thickness of 0.3 μm to 60 μm.

3. A holding device according to claim 1 , wherein, in at least one cross section parallel to the first direction, pores present at an interface between the heating resistor element and the coat layer have an average diameter of 10 μm or less.

4. A holding device according to claim 1 , wherein, in at least one cross section parallel to the first direction, the ratio of a sectional area of a carbide layer formed on the surface of the heating resistor element to a sectional area of the heating resistor element is 10% or less.

5. A holding device according to claim 4 , wherein, in at least one cross section parallel to the first direction, the ratio of a sectional area of a carbide layer formed on the surface of the heating resistor element to a sectional area of the heating resistor element is 3% or less.

6. A holding device according to claim 1 , wherein the electricity supply member contains no organic substance.

7. A holding device according to claim 1 , wherein the heating resistor element has a mesh shape.

8. A method of manufacturing a holding device which comprises a ceramic member having a first surface approximately perpendicular to a first direction and formed of a sintered ceramic material containing aluminum nitride as a main component, a heating resistor element formed of a metal and disposed in the ceramic member, an electricity supply connection member which is electrically conductive and is in contact with the heating resistor element; and an electricity supply terminal which is electrically conductive and is electrically connected to the electricity supply connection member, and which holds an object on the first surface of the ceramic member,

the method being characterized by comprising the steps of:

forming a coat layer which is a nitride selected from the group consisting of AlN, AlTiN, AlTiSiN, AlZrN, AlTiCrN, VN, and NbN on at least a portion of a surface of the heating resistor element, excluding its contact surface for contact with the electricity supply connection member; and

forming, through firing, the ceramic member in which the electricity supply member and the heating resistor element having the coat layer formed thereon are disposed.

Assignments (2)
CHANGE OF NAME Recorded Sep 7, 2023
From: NGK SPARK PLUG CO., LTD.
To: NITERRA CO., LTD.
Reel/Frame 064842/0215 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 26, 2020
From: SAKAMAKI, RYUNOSUKE; TAKAOKA, KATSUYA; WATANABE, HIROSHI
To: NGK SPARK PLUG CO., LTD.
Reel/Frame 053601/0967 →
Priority Claims (2)
JP 2018-216115 · Nov 19, 2018 · national
JP 2018-216116 · Nov 19, 2018 · national
Continuity (1)
Related Publication 20200404747A1 · Dec 24, 2020