Magnetoresistance memory device and method of manufacturing magnetoresistance memory device
In general, according to one embodiment, a magnetoresistance memory device includes: a first conductor; a second conductor on the first conductor; a first element on the second conductor; a third conductor on the first element; and a first layer stack on the third conductor. The second conductor is amorphous. The first element includes a silicon oxide introduced with a dopant. The first layer stack includes a first magnetic layer, a second magnetic layer, and a first insulating layer between the first magnetic layer and the second magnetic layer.
1. A magnetoresistance memory device, comprising:
a first conductor;
a first silicon oxide surrounding a side surface of the first conductor;
a second conductor on the first conductor, the second conductor being amorphous;
a first element on the second conductor, the first element comprising a silicon oxide introduced with an ion-implanted dopant;
a third conductor on the first element; and
a first layer stack on the third conductor, the first layer stack including a first magnetic layer, a second magnetic layer, and a first insulating layer between the first magnetic layer and the second magnetic layer,
wherein:
the first silicon oxide contains the dopant, and
a concentration of the dopant in the first silicon oxide is lower than a concentration of the dopant in the first element.
2. The device according to claim 1 , further comprising:
a fourth conductor surrounded by the first silicon oxide.
3. The device according to claim 2 , further comprising:
a fifth conductor on the fourth conductor, the fifth conductor being amorphous;
a second element on the fifth conductor, the second element comprising a silicon oxide introduced with the dopant;
a sixth conductor on the second element; and
a second layer stack on the sixth conductor, the second layer stack including a third magnetic layer, a fourth magnetic layer, and a second insulating layer between the third magnetic layer and the fourth magnetic layer.
4. The device according to claim 1 , wherein the second conductor comprises one or more of an electrically conductive carbon, an indium tin oxide, a hafnium boride, and a boride.
5. The device according to claim 1 , wherein the dopant contains one or more of arsenic and germanium.
6. The device according to claim 1 , wherein the third conductor comprises a crystalline material.
7. The device according to claim 1 , wherein the concentration of the dopant in the first silicon oxide is lower than the concentration of the dopant in the first element by plural digits.
8. The device according to claim 1 , wherein the first silicon oxide is on the side surface of the first conductor.
9. The device according to claim 1 , wherein the first element is the silicon oxide introduced with the ion-implanted dopant.
10. A magnetoresistance memory device, comprising:
a first conductor;
a first silicon oxide surrounding a side surface of the first conductor;
a second conductor on the first conductor silicon oxide, the second conductor being amorphous;
a third conductor on the second conductor;
a first element on the third conductor, the first element comprising a silicon oxide introduced with an ion-implanted dopant;
a fourth conductor on the first element; and
a first layer stack on the fourth conductor, the first layer stack including a first magnetic layer, a second magnetic layer, and a first insulating layer between the first magnetic layer and the second magnetic layer,
wherein:
the first silicon oxide contains the dopant, and
a concentration of the dopant in the first silicon oxide is lower than a concentration of the dopant in the first element.
11. The device according to claim 10 , further comprising:
a fifth conductor surrounded by the first silicon oxide.
12. The device according to claim 10 , further comprising:
a sixth conductor on the fifth conductor, the sixth conductor being amorphous;
a second element on the sixth conductor, the second element comprising a silicon oxide introduced with the dopant;
a seventh conductor on the second element; and
a second layer stack on the seventh conductor, the second layer stack including a third magnetic laver, a fourth magnetic layer, and a second insulating layer between the third magnetic layer and the fourth magnetic layer.
13. The device according to claim 10 , wherein the second conductor comprises one or more of an electrically conductive carbon, an indium tin oxide, a hafnium boride, and a boride.
14. The device according to claim 10 , wherein the dopant contains one or more of arsenic and germanium.
15. The device according to claim 10 , wherein the concentration of the dopant in the first silicon oxide is lower than the concentration of the dopant in the first element by plural digits.
16. The device according to claim 10 , wherein the first silicon oxide is on the side surface of the first conductor.
17. The device according to claim 10 , wherein the first element is the silicon oxide introduced with the ion-implanted dopant.