Semiconductor apparatus and manufacturing method of semiconductor apparatus
Provided is a semiconductor apparatus including: a first peak of a hydrogen chemical concentration disposed on the lower surface side of the semiconductor substrate; and a flat portion disposed on the upper surface side of the semiconductor substrate with respect to the first peak, containing a hydrogen donor, and having a substantially (almost) flat donor concentration distribution in a depth direction. An oxygen contribution ratio indicating a ratio of an oxygen chemical concentration contributing to generation of the hydrogen donor in the oxygen chemical concentration of the oxygen ranges from 1×10 −5 to 7×10 −4 . A concentration of the oxygen contributing to generation of the hydrogen donor in the flat portion is lower than the hydrogen chemical concentration. A hydrogen donor concentration in the flat portion ranges from 2×10 12 /cm 3 to 5×10 14 /cm 3 .
1. A semiconductor apparatus comprising:
a semiconductor substrate having an upper surface and a lower surface and containing oxygen;
a first peak of a hydrogen chemical concentration disposed on the lower surface side of the semiconductor substrate; and
a flat portion disposed on the upper surface side of the semiconductor substrate with respect to the first peak, containing a hydrogen donor, and having a substantially flat donor concentration distribution in a depth direction of the semiconductor substrate,
wherein
an oxygen contribution ratio indicating a ratio of an oxygen chemical concentration contributing to generation of the hydrogen donor in the oxygen chemical concentration of the oxygen ranges from 1×10 −5 to 7×10 −4 ,
a concentration of the oxygen contributing to generation of the hydrogen donor in the flat portion is lower than the hydrogen chemical concentration, and
a hydrogen donor concentration in the flat portion ranges from 2×10 12 /cm 3 to 5×10 14 /cm 3 .
2. The semiconductor apparatus according to claim 1 , wherein
the semiconductor substrate contains a bulk donor, and
a donor concentration of the flat portion is higher than a bulk donor concentration.
3. The semiconductor apparatus according to claim 2 , wherein
a sum of a value obtained by multiplying an oxygen chemical concentration in the flat portion by the oxygen contribution ratio and a vacancy concentration of the flat portion is defined as a first value of the hydrogen donor concentration,
a difference obtained by subtracting the bulk donor concentration from a donor concentration of the flat portion is defined as a second value of the hydrogen donor concentration, and
a ratio of the first value of the hydrogen donor concentration to the second value of the hydrogen donor concentration ranges from 0.1 to 10.
4. The semiconductor apparatus according to claim 1 , further comprising:
a second peak of a chemical concentration of hydrogen or helium disposed on the upper surface side of the semiconductor substrate,
wherein the flat portion is disposed closer to the lower surface side of the semiconductor substrate than the second peak.
5. The semiconductor apparatus according to claim 1 , wherein
a hydrogen contribution ratio indicating a ratio of the hydrogen chemical concentration contributing to generation of the hydrogen donor in the hydrogen chemical concentration ranges from 0.001 to 0.3.
6. The semiconductor apparatus according to claim 1 , wherein
a vacancy concentration of the flat portion ranges from 1×10 11 /cm 3 to 1×10 14 /cm 3 .
7. The semiconductor apparatus according to claim 1 , wherein
the oxygen contribution ratio is 5×10 −4 or less.
8. The semiconductor apparatus according to claim 1 , wherein
the oxygen contribution ratio is 1×10 −4 or more.
9. The semiconductor apparatus according to claim 4 , wherein
the hydrogen chemical concentration of the first peak is higher than the hydrogen chemical concentration of the second peak.
10. The semiconductor apparatus according to claim 1 , wherein
an oxygen chemical concentration in the flat portion is 1×10 17 atoms/cm 3 or more.
11. The semiconductor apparatus according to claim 1 , wherein
a carbon chemical concentration in the flat portion ranges from 1×10 13 atoms/cm 3 to 1×10 16 atoms/cm 3 .
12. A semiconductor apparatus comprising:
a semiconductor substrate having an upper surface and a lower surface and containing oxygen;
a first peak of a hydrogen chemical concentration disposed on the lower surface side of the semiconductor substrate; and
a flat portion disposed on the upper surface side of the semiconductor substrate with respect to the first peak, containing a hydrogen donor, and having a substantially flat donor concentration distribution in a depth direction of the semiconductor substrate,
wherein
the semiconductor substrate contains a bulk donor,
a donor concentration of the flat portion is higher than a bulk donor concentration,
a sum of a value obtained by multiplying an oxygen chemical concentration in the flat portion by an oxygen contribution ratio indicating a ratio of the oxygen chemical concentration contributing to generation of the hydrogen donor in the oxygen chemical concentration of the oxygen and a vacancy concentration of the flat portion is defined as a first value of a hydrogen donor concentration,
a difference obtained by subtracting the bulk donor concentration from a donor concentration of the flat portion is defined as a second value of the hydrogen donor concentration, and
a ratio of the first value of the hydrogen donor concentration to the second value of the hydrogen donor concentration ranges from 0.1 to 10.
13. A semiconductor apparatus comprising:
a semiconductor substrate having an upper surface and a lower surface and containing oxygen and carbon;
a first peak of a hydrogen chemical concentration disposed on the lower surface side of the semiconductor substrate; and
a flat portion disposed on the upper surface side of the semiconductor substrate with respect to the first peak, containing a hydrogen donor, and having a substantially flat donor concentration distribution in a depth direction of the semiconductor substrate,
wherein
the semiconductor substrate contains a bulk donor,
a donor concentration of the flat portion is higher than a bulk donor concentration,
a sum of a value obtained by multiplying an oxygen chemical concentration in the flat portion by an oxygen contribution ratio indicating a ratio of the oxygen chemical concentration contributing to generation of the hydrogen donor in the oxygen chemical concentration of the oxygen, a value obtained by multiplying a carbon chemical concentration in the flat portion by a carbon contribution ratio indicating a ratio of the carbon chemical concentration contributing to generation of the hydrogen donor in the carbon chemical concentration of the carbon, and a vacancy concentration of the flat portion is defined as a third value of a hydrogen donor concentration,
a difference obtained by subtracting the bulk donor concentration from the donor concentration of the flat portion is defined as a second value of the hydrogen donor concentration, and
a ratio of the third value of the hydrogen donor concentration to the second value of the hydrogen donor concentration ranges from 0.1 to 10.