Driver board, display panel

1. A driver board, comprising:

a substrate;

a metal oxide semiconductor active layer;

a gate layer, arranged on the side of the metal oxide semiconductor active layer away from the substrate;

a first protective layer, covered the gate layer, wherein the material of the first protective layer is metal oxide semiconductor, and the oxygen content of the first protective layer is greater than the oxygen content of the metal oxide semiconductor active layer;

a source-drain layer and a second protective layer, wherein the source-drain layer is arranged on the side of the first protection layer away from the gate layer, the second protective layer covers the source-drain layer, the material of the second protective layer is metal oxide semiconductor, and the oxygen content of the second protective layer is greater than the oxygen content of the metal oxide semiconductor active layer; and

a third protective layer and a passivation layer, wherein the passivation layer is arranged on the side of the second protection layer away from the source-drain layers, the third protective layer covers the passivation layer, and the oxygen content of the third protective layer is greater than the oxygen content of the metal oxide semiconductor active layer,

wherein the third protective layer comprises a first protective sublayer, a second protective sublayer, and a third protective sublayer that are stacked, wherein the materials of the first protective sublayer and the third protective sublayer are metal oxide semiconductors, the oxygen content of the first protective sublayer and the third protective sublayer is greater than the oxygen content of the metal oxide semiconductor active layer, and the material of the second protective sublayer is an inorganic material.

2. The driver board according to claim 1 , wherein the band gap of the metal oxide semiconductor of the at least one protective layer is 2.0 eV to 3.5 eV.

3. The driver board according to claim 1 , wherein the sheet resistance of the metal oxide semiconductor of at least one protective layer is equal to or more than 10 to the power of 9 (10 9 ) Ω·cm −2 .

4. The driver board according to claim 1 , wherein the thickness of the metal oxide semiconductor of at least one protective layer is 10 nm to 30 nm.

5. The driver board according to claim 1 , wherein the metal oxide semiconductor of at least one protective layer is an opaque material.

6. The driver board according to claim 1 , wherein the material of the metal oxide semiconductor of each protective layer includes one or more of indium gallium zinc oxide, indium zinc tin oxide, and indium gallium zinc tin oxide.

7. The driver board according to claim 1 , wherein a pixel electrode layer is arranged on the side of the passivation layer away from the substrate, and the film material of the pixel electrode layer is a high-permeability metal oxide material.

8. A display panel, comprising a driver board and a light source, the driver board further comprises:

a substrate;

a metal oxide semiconductor active layer;

a gate layer, arranged on the side of the metal oxide semiconductor active layer away from the substrate;

a first protective layer, covered the gate layer, wherein the material of the first protective layer is metal oxide semiconductor, and the oxygen content of the first protective layer is greater than the oxygen content of the metal oxide semiconductor active layer;

a source-drain layer and a second protective layer, wherein the source-drain layer is arranged on the side of the first protection layer away from the gate layer, the second protective layer covers the source-drain layer, the material of the second protective layer is metal oxide semiconductor, and the oxygen content of the second protective layer is greater than the oxygen content of the metal oxide semiconductor active layer; and

a third protective layer and a passivation layer, wherein the passivation layer is arranged on the side of the second protection layer away from the source-drain layers, the third protective layer covers the passivation layer, and the oxygen content of the third protective layer is greater than the oxygen content of the metal oxide semiconductor active layer,

wherein the third protective layer comprises a first protective sublayer, a second protective sublayer, and a third protective sublayer that are stacked, wherein the materials of the first protective sublayer and the third protective sublayer are metal oxide semiconductors, the oxygen content of the first protective sublayer and the third protective sublayer is greater than the oxygen content of the metal oxide semiconductor active layer, and the material of the second protective sublayer is an inorganic material.

9. The display panel according to claim 8 , wherein the band gap of the metal oxide semiconductor of the at least one protective layer is 2.0 eV to 3.5 eV.

10. The display panel according to claim 8 , wherein the sheet resistance of the metal oxide semiconductor of at least one protective layer is equal to or more than 10 to the power of 9 (10 9 ) Ω·cm −2 .

11. The display panel according to claim 8 , wherein the thickness of the metal oxide semiconductor of at least one protective layer is 10 nm to 30 nm.

12. The display panel according to claim 8 , wherein the metal oxide semiconductor of at least one protective layer is an opaque material.

13. The display panel according to claim 8 , wherein the material of the metal oxide semiconductor of each protective layer includes one or more of indium gallium zinc oxide, indium zinc tin oxide, and indium gallium zinc tin oxide.

14. The display panel according to claim 8 , wherein a pixel electrode layer is arranged on the side of the passivation layer away from the substrate, and the film material of the pixel electrode layer is a high-permeability metal oxide material.