Photodetector

1. A photodetector comprising:

a plurality of photodiodes including germanium or a germanium compound in a light absorption layer; and

a plurality of heaters configured to apply heat to the light absorption layer of each of the plurality of photodiodes, wherein each of the plurality of photodiodes is associated with one of the plurality of heaters,

wherein the plurality of heaters are connected in series, the plurality of heaters are connected in parallel, or a plurality of sets of the plurality of heaters serially connected are connected in parallel, wherein a collective width of the plurality of heaters when the plurality of heaters are connected in parallel and a collective length of the plurality of heaters are connected in series are configured to provide the photodetector with a sufficient electrostatic discharge withstand voltage.

2. The photodetector according to claim 1 , wherein a photodiode of the plurality of photodiodes includes:

a silicon substrate;

a lower clad layer formed on the silicon substrate;

a core layer formed on the lower clad layer and including a silicon slab doped with impurity ions having a first conductivity type, an electrode portion doped with the impurity ions having the first conductivity type at a high concentration, and a waveguide layer connected to the silicon slab;

a germanium layer formed on the core layer and including a germanium region doped with impurities having a second conductivity type;

an upper clad layer formed on the core layer and the germanium layer; and

electrodes connected to the electrode portion and the germanium region, respectively.

3. The photodetector according to claim 1 , wherein a photodiode of the plurality of photodiodes includes:

a silicon substrate;

a lower clad layer formed on the silicon substrate;

a core layer formed on the lower clad layer and including a silicon slab doped with impurity ions having a first conductivity type, and a waveguide layer connected to the silicon slab;

a germanium layer formed on the core layer and including a first germanium region doped with the impurity ions having the first conductivity type and a second germanium region doped with impurity ions having a second conductivity type;

an upper clad layer formed on the core layer and the germanium layer; and

electrodes connected to the first germanium region and the second germanium region, respectively.

4. The photodetector according to claim 1 , wherein a photodiode of the plurality of photodiodes includes:

a silicon substrate;

a lower clad layer formed on the silicon substrate;

a core layer formed on the lower clad layer and including a silicon slab, the silicon slab including a first silicon region doped with impurity ions having a first conductivity type, a first electrode portion doped with the impurity ions having the first conductivity type, a second silicon region doped with impurity ions having a second conductivity type, and a second electrode portion doped with the impurity ions having the second conductivity type, and a waveguide layer connected to the silicon slab;

a germanium layer formed on the core layer;

an upper clad layer formed on the core layer and the germanium layer; and

electrodes connected to the first electrode portion and the second electrode portion.

5. The photodetector according to claim 2 ,

wherein a heater of the plurality of heaters is formed with a metal or metal compound embedded in the upper clad layer and the heater of the plurality of heaters is disposed directly above the light absorption layer, and

a width and a length of the heater are equal to or 1 μm larger than a width and a length of the light absorption layer, respectively.

6. The photodetector according to claim 2 , wherein a heater of the plurality of heaters is prepared by doping the core layer with impurities and wherein the heater is disposed around the light absorption layer.

7. The photodetector according to claim 5 , wherein a density of a current flowing through each of the plurality of heaters is 150 to 250 mA/μm 2 or less.

8. The photodetector according to claim 5 , further comprising a capacitor connected in parallel with the heater.

9. The photodetector according to claim 3 ,

wherein a heater of the plurality of heaters is formed with a metal or metal compound embedded in the upper clad layer and wherein the heater is disposed directly above the light absorption layer, and

a width and a length of the heater are equal to or 1 μm larger than a width and a length of the light absorption layer, respectively.

10. The photodetector according to claim 4 ,

wherein a heater of the plurality of heaters is formed with a metal or metal compound embedded in the upper clad layer and wherein the heater is disposed directly above the light absorption layer, and

a width and a length of the heater are equal to or 1 μm larger than a width and a length of the light absorption layer, respectively.

11. The photodetector according to claim 3 , wherein a heater of the plurality of heaters is prepared by doping the core layer with impurities and wherein the heater is disposed around the light absorption layer.

12. The photodetector according to claim 4 , wherein a heater of the plus of heaters is prepared by doping the core layer with impurities and wherein the heater is disposed around the light absorption layer.

13. The photodetector according to claim 6 , wherein a density of a current flowing through each of the plurality of heaters is 150 to 250 mA/μm 2 or less.

14. The photodetector according to claim 6 , further comprising a capacitor connected in parallel with the heater.