Substrate treating apparatus and substrate treating method

1. A substrate treating apparatus comprising:

a process chamber having a treating space therein;

a support unit for supporting a substrate within the process chamber;

a gas supply unit for supplying a process gas inside the process chamber; and

a plasma generation unit for generating a plasma from the process gas,

wherein the plasma generation unit comprises:

a top electrode disposed above the substrate;

a bottom electrode disposed below the substrate;

an edge electrode disposed at an edge surrounding the substrate;

three high frequency power sources configured to apply a high frequency power to the bottom electrode, the three high frequency power sources including a first frequency power source having a range between 100 kHz to 400 kHz, a second frequency power source having a range between 2 MHz to 10 MHz, and third frequency power source having a range of 60 MHz or higher; and

an edge impedance control circuit connected to the edge electrode and including one or more notch filter(s), and a variable capacitor connected in parallel to the one or more notch filter(s).

2. The substrate treating apparatus of claim 1 , wherein the one or more notch filter(s) block a frequency range of the first frequency power source and the second frequency power source, and the variable capacitor controls an impedance of the third frequency power source.

3. A substrate treating apparatus comprising:

a process chamber having a treating space therein;

a support unit for supporting a substrate within the process chamber;

a gas supply unit for supplying a process gas inside the process chamber; and

a plasma generation unit for generating a plasma from the process gas,

wherein the plasma generation unit comprises:

a top electrode disposed above the substrate;

a bottom electrode disposed below the substrate;

an edge electrode disposed at an edge surrounding the substrate;

three high frequency power sources configured to apply a high frequency power to the bottom electrode, the three high frequency power sources including a first frequency power source having a range between 100 kHz to 400 kHz, a second frequency power source having a range between 2 MHz to 10 MHz, and third frequency power source having a range of 60 MHz or higher; and

an edge impedance control circuit connected to the edge electrode and including one or more notch filter(s), and a high pass filter connected in parallel to the one or more notch filters(s).

4. The substrate treating apparatus of claim 3 , wherein the one or more notch filter(s) block a frequency range of the first frequency power source and the second frequency power source, and the high pass filter controls an impedance of the third frequency power source and shunts a harmonics of the third frequency power source.

5. A substrate treating apparatus comprising:

a process chamber having a treating space therein;

a support unit for supporting a substrate within the process chamber;

a gas supply unit for supplying a process gas inside the process chamber; and

a plasma generation unit for generating a plasma from the process gas,

wherein the plasma generation unit comprises:

a top electrode disposed above the substrate;

a bottom electrode disposed below the substrate; and

three high frequency power sources configured to apply a high frequency power to the bottom electrode, the three high frequency power sources including a first frequency power source having a range between 100 kHz to 400 kHz, a second frequency power source having a range between 2 MHz to 10 MHz, and third frequency power source having a range of 60 MHz or higher; and

wherein the support unit comprises:

an edge ring surrounding the substrate;

a coupling ring disposed below the edge ring, and including an edge electrode therein; and

an edge impedance control circuit connected to the edge electrode and including one or more notch filter(s), and a variable capacitor connected in parallel to the one or more notch filter(s).

6. The substrate treating apparatus of claim 5 , wherein the one or more notch filter(s) block a frequency range of the first frequency power source and the second frequency power source, and the variable capacitor controls an impedance of the third frequency power source.

7. A substrate treating apparatus comprising

a process chamber having a treating space therein;

a support unit for supporting a substrate within the process chamber;

a gas supply unit for supplying a process gas inside the process chamber; and

a plasma generation unit for generating a plasma from the process gas,

wherein the plasma generation unit comprises:

a top electrode disposed above the substrate;

a bottom electrode disposed below the substrate; and

three high frequency power sources configured to apply a high frequency power to the bottom electrode, the three high frequency power sources including a first frequency power source having a range between 100 kHz to 400 kHz, a second frequency power source having a range between 2 MHz to 10 MHz, and third frequency power source having a range of 60 MHz or higher; and

wherein the support unit comprises:

an edge ring surrounding the substrate;

a coupling ring disposed below the edge ring, and including an edge electrode therein; and

an edge impedance control circuit connected to the edge electrode and including one or more notch filter(s), and a high pass filter connected in parallel to the one or more notch filters(s).

8. The substrate treating apparatus of claim 7 , wherein the one or more notch filter(s) block a frequency range of the first frequency power source and the second frequency power source, and the high pass filter controls an impedance of the third frequency power source and shunts a harmonics of the third frequency power source.