Neuromorphic device

1. A neuromorphic device comprising:

a first element group; and

a second element group,

wherein each of the first element group and the second element group includes a plurality of magnetic domain wall movement elements,

wherein each of the plurality of magnetic domain wall movement elements includes a magnetic domain wall movement layer, a ferromagnetic layer, and a non-magnetic layer interposed between the magnetic domain wall movement layer and the ferromagnetic layer,

wherein a length of the magnetic domain wall movement layer of each of the magnetic domain wall movement elements belonging to the first element group in a longitudinal direction is shorter than a length of the magnetic domain wall movement layer of each of the magnetic domain wall movement elements belonging to the second element group in the longitudinal direction, and

wherein a resistance changing rate when a predetermined pulse is input is higher for each of the magnetic domain wall movement elements belonging to the first element group than for each of the magnetic domain wall movement elements belonging to the second element group.

2. The neuromorphic device according to claim 1 ,

wherein the first element group and the second element group are inside a laminated structural body, and

wherein the laminated structural body is stacked on a substrate.

3. The neuromorphic device according to claim 2 , wherein the second element group is at a position further away from the substrate than the first element group in the laminated structural body.

4. The neuromorphic device according to claim 1 , wherein the number of the magnetic domain wall movement elements belonging to the first element group is larger than the number of the magnetic domain wall movement elements belonging to the second element group.

5. The neuromorphic device according to claim 1 , wherein a critical current density required for moving a magnetic domain wall of the magnetic domain wall movement element is lower in each of the magnetic domain wall movement elements belonging to the second element group than in each of the magnetic domain wall movement elements belonging to the first element group.

6. The neuromorphic device according to claim 1 , wherein any one of the magnetic domain wall movement elements of the first element group and any one of the magnetic domain wall movement elements of the second element group at least partially overlap each other in a plan view in a stacking direction of the magnetic domain wall movement element.

7. The neuromorphic device according to claim 1 , wherein both ends of any one of the magnetic domain wall movement elements of the first element group are inside both ends of any one of the magnetic domain wall movement elements of the second element group in a longitudinal direction of any one of the magnetic domain wall movement element, belonging to the second element group.

8. The neuromorphic device according to claim 1 , wherein the magnetic domain wall movement elements of the first element group and the magnetic domain wall movement elements of the second element group do not overlap each other in a plan view in a stacking direction of the magnetic domain movement element.

9. The neuromorphic device according to claim 1 , wherein a surface roughness of a lower face of the magnetic domain wall movement element belonging to the second element group is higher than a surface roughness of a lower face of the magnetic domain wall movement element belonging to the first element group.

10. The neuromorphic device according to claim 1 , further comprising a connection wiring connecting any one of the magnetic domain wall movement elements of the first element group and any one of the magnetic domain wall movement elements of the second element group.

11. The neuromorphic device according to claim 1 ,

wherein the first element group performs a first multiply/accumulate operation, and the second element group performs a second multiply/accumulate operation, and

wherein a sum of outputs from the plurality of magnetic domain wall movement elements belonging to the first element group is input to the magnetic domain wall movement element belonging to the second element group.

12. The neuromorphic device according to claim 1 , wherein a pulse length of a write pulse input to the magnetic domain wall movement elements belonging to the second element group is different from a pulse length of a write pulse input to the magnetic domain wall movement elements belonging to the first element group.

13. The neuromorphic device according to claim 1 , wherein a pulse amplitude of a write pulse input to the magnetic domain wall movement elements belonging to the second element group is different from a pulse amplitude of a write pulse input to the magnetic domain wall movement elements belonging to the first element group.

14. The neuromorphic device according to claim 1 , wherein each of the first element group and the second element group is responsible for a calculation between different layers in a neural network.

15. The neuromorphic device according to claim 1 , wherein the first element group is responsible for a calculation of an input layer side of a neural network from the second element group.